JP2005236003A - 抵抗変化型不揮発性メモリ、抵抗変化型不揮発性メモリの製造方法、記録方法、再生方法、消去方法、抵抗変化材料微細構造体および抵抗変化材料微細構造体の製造方法 - Google Patents

抵抗変化型不揮発性メモリ、抵抗変化型不揮発性メモリの製造方法、記録方法、再生方法、消去方法、抵抗変化材料微細構造体および抵抗変化材料微細構造体の製造方法 Download PDF

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JP2005236003A
JP2005236003A JP2004042849A JP2004042849A JP2005236003A JP 2005236003 A JP2005236003 A JP 2005236003A JP 2004042849 A JP2004042849 A JP 2004042849A JP 2004042849 A JP2004042849 A JP 2004042849A JP 2005236003 A JP2005236003 A JP 2005236003A
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Prior art keywords
variable resistance
nonvolatile memory
thin film
electrode
block copolymer
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Japanese (ja)
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JP2005236003A5 (https=
Inventor
Yuichi Ishida
祐一 石田
Chiharu Isobe
千春 磯辺
Katsuyuki Hironaka
克行 広中
Masayuki Suzuki
真之 鈴木
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Sony Corp
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Sony Corp
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Priority to JP2004042849A priority Critical patent/JP2005236003A/ja
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Publication of JP2005236003A5 publication Critical patent/JP2005236003A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
JP2004042849A 2004-02-19 2004-02-19 抵抗変化型不揮発性メモリ、抵抗変化型不揮発性メモリの製造方法、記録方法、再生方法、消去方法、抵抗変化材料微細構造体および抵抗変化材料微細構造体の製造方法 Pending JP2005236003A (ja)

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JP2004042849A JP2005236003A (ja) 2004-02-19 2004-02-19 抵抗変化型不揮発性メモリ、抵抗変化型不揮発性メモリの製造方法、記録方法、再生方法、消去方法、抵抗変化材料微細構造体および抵抗変化材料微細構造体の製造方法

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JP2004042849A JP2005236003A (ja) 2004-02-19 2004-02-19 抵抗変化型不揮発性メモリ、抵抗変化型不揮発性メモリの製造方法、記録方法、再生方法、消去方法、抵抗変化材料微細構造体および抵抗変化材料微細構造体の製造方法

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007052426A1 (ja) * 2005-11-02 2007-05-10 Sharp Kabushiki Kaisha クロスポイント構造の半導体記憶装置
JP2008141193A (ja) * 2006-11-21 2008-06-19 Samsung Electronics Co Ltd 不揮発性メモリ素子及びその製造方法
WO2008132899A1 (ja) * 2007-04-17 2008-11-06 Nec Corporation 抵抗変化素子及び該抵抗変化素子を含む半導体装置
JP2009295944A (ja) * 2008-06-09 2009-12-17 Sharp Corp 可変抵抗素子及びその製造方法
WO2010039568A1 (en) * 2008-09-30 2010-04-08 Sandisk 3D Llc Self-assembly process for memory array
WO2011000316A1 (zh) * 2009-07-02 2011-01-06 黑龙江大学 纳米结构快速开关忆阻器及其制造方法
CN102522418A (zh) * 2011-12-29 2012-06-27 北京大学 具有交叉阵列结构的自整流阻变存储器及制备方法
JP2012209410A (ja) * 2011-03-29 2012-10-25 Seiko Epson Corp 半導体装置の製造方法、強誘電体素子の製造方法および電子機器の製造方法
US8462539B2 (en) 2009-02-20 2013-06-11 Murata Manufacturing Co., Ltd. Resistive memory element and use thereof
US8542520B2 (en) 2009-02-20 2013-09-24 Murata Manufacturing Co., Ltd. Resistive memory element and use thereof
JP2015015425A (ja) * 2013-07-08 2015-01-22 株式会社東芝 パターン形成方法
US8946672B2 (en) 2009-11-11 2015-02-03 Nec Corporation Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
JP2015176895A (ja) * 2014-03-13 2015-10-05 株式会社東芝 不揮発性メモリ
CN108389964A (zh) * 2018-04-03 2018-08-10 集美大学 以纳米遮蔽层进行离子定位注入的阻变存储器制备方法
WO2019175673A1 (en) * 2018-03-16 2019-09-19 4D-S, Ltd. Resistive memory device having a template layer
CN110600499A (zh) * 2015-04-16 2019-12-20 意法半导体公司 高密度电阻性随机存取存储器（rram）
CN111701588A (zh) * 2020-05-08 2020-09-25 昆明理工大学 一种贵金属纳米多孔材料及其制备方法和应用
CN119751125A (zh) * 2024-12-27 2025-04-04 广东新巨微电子有限公司 一种高介电常数陶瓷基片及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001278700A (ja) * 2000-03-29 2001-10-10 Canon Inc ナノ構造体、その製造方法および磁気デバイス
JP2002537627A (ja) * 1999-02-17 2002-11-05 インターナショナル・ビジネス・マシーンズ・コーポレーション 情報を保存するマイクロ電子デバイスとその方法
JP2004502554A (ja) * 2000-03-22 2004-01-29 ユニバーシティー　オブ　マサチューセッツ ナノシリンダー・アレイ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002537627A (ja) * 1999-02-17 2002-11-05 インターナショナル・ビジネス・マシーンズ・コーポレーション 情報を保存するマイクロ電子デバイスとその方法
JP2004502554A (ja) * 2000-03-22 2004-01-29 ユニバーシティー　オブ　マサチューセッツ ナノシリンダー・アレイ
JP2001278700A (ja) * 2000-03-29 2001-10-10 Canon Inc ナノ構造体、その製造方法および磁気デバイス

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007052426A1 (ja) * 2005-11-02 2007-05-10 Sharp Kabushiki Kaisha クロスポイント構造の半導体記憶装置
JP2008141193A (ja) * 2006-11-21 2008-06-19 Samsung Electronics Co Ltd 不揮発性メモリ素子及びその製造方法
US8362456B2 (en) 2007-04-17 2013-01-29 Nec Corporation Resistance change element and semiconductor device including the same
WO2008132899A1 (ja) * 2007-04-17 2008-11-06 Nec Corporation 抵抗変化素子及び該抵抗変化素子を含む半導体装置
JP5526776B2 (ja) * 2007-04-17 2014-06-18 日本電気株式会社 抵抗変化素子及び該抵抗変化素子を含む半導体装置
JP2009295944A (ja) * 2008-06-09 2009-12-17 Sharp Corp 可変抵抗素子及びその製造方法
WO2010039568A1 (en) * 2008-09-30 2010-04-08 Sandisk 3D Llc Self-assembly process for memory array
US8008213B2 (en) 2008-09-30 2011-08-30 Sandisk 3D Llc Self-assembly process for memory array
JP5459516B2 (ja) * 2009-02-20 2014-04-02 株式会社村田製作所 抵抗記憶素子およびその使用方法
US8462539B2 (en) 2009-02-20 2013-06-11 Murata Manufacturing Co., Ltd. Resistive memory element and use thereof
US8542520B2 (en) 2009-02-20 2013-09-24 Murata Manufacturing Co., Ltd. Resistive memory element and use thereof
WO2011000316A1 (zh) * 2009-07-02 2011-01-06 黑龙江大学 纳米结构快速开关忆阻器及其制造方法
US9231207B2 (en) 2009-11-11 2016-01-05 Nec Corporation Method for forming resistance changing element capable of operating at low voltage
US8946672B2 (en) 2009-11-11 2015-02-03 Nec Corporation Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
JP2012209410A (ja) * 2011-03-29 2012-10-25 Seiko Epson Corp 半導体装置の製造方法、強誘電体素子の製造方法および電子機器の製造方法
CN102522418A (zh) * 2011-12-29 2012-06-27 北京大学 具有交叉阵列结构的自整流阻变存储器及制备方法
JP2015015425A (ja) * 2013-07-08 2015-01-22 株式会社東芝 パターン形成方法
JP2015176895A (ja) * 2014-03-13 2015-10-05 株式会社東芝 不揮発性メモリ
CN110600499A (zh) * 2015-04-16 2019-12-20 意法半导体公司 高密度电阻性随机存取存储器（rram）
US10862028B2 (en) 2018-03-16 2020-12-08 4DS Memory, Limited Resistive memory device having a template layer
WO2019175673A1 (en) * 2018-03-16 2019-09-19 4D-S, Ltd. Resistive memory device having a template layer
US10622559B2 (en) 2018-03-16 2020-04-14 4DS Memory, Limited Resistive memory device having a template layer
US10734577B2 (en) 2018-03-16 2020-08-04 4DS Memory, Limited Resistive memory device having a template layer
TWI711198B (zh) * 2018-03-16 2020-11-21 澳大利亞商４Ｄ Ｓ有限公司 具有一模板層之電阻式記憶體裝置
US10847717B2 (en) 2018-03-16 2020-11-24 4DS Memory, Limited Resistive memory device having a template layer
US11043633B2 (en) 2018-03-16 2021-06-22 4DS Memory, Limited Resistive memory device having a template layer
CN108389964A (zh) * 2018-04-03 2018-08-10 集美大学 以纳米遮蔽层进行离子定位注入的阻变存储器制备方法
CN111701588A (zh) * 2020-05-08 2020-09-25 昆明理工大学 一种贵金属纳米多孔材料及其制备方法和应用
CN119751125A (zh) * 2024-12-27 2025-04-04 广东新巨微电子有限公司 一种高介电常数陶瓷基片及其制备方法
CN119751125B (zh) * 2024-12-27 2025-09-19 广东新巨微电子有限公司 一种高介电常数陶瓷基片及其制备方法

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