JP5204969B2 - 強誘電体酸化物人工格子および強誘電体酸化物人工格子の製造方法 - Google Patents
強誘電体酸化物人工格子および強誘電体酸化物人工格子の製造方法 Download PDFInfo
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/314—Inorganic layers
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- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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Description
図1は、本発明の強誘電体薄膜として、多層酸化物人工格子を形成するために使用したPLD(Pulsed laser deposition)装備を示した概略図である。図1を参照すると、PLD装備は、エキシマーレーザー10、減衰器20、フォーカシングレンズ30、下部電極が形成されたターゲット基板40、及びヒーター50から構成されている。レーザーソース(source)としては、KrFガスを用いて248nmの波長の長さを有し30nsのパルスを発生させる、ラムダフィジックス(Lambda Physics)社のCOMPEX205エキシマーレーザーを使用した。ターゲット60としては、純度99.9%のPbZrO3とPbTiO3ターゲットを使用した。上記減衰器20には、レーザーエネルギーを調節するためにシリカガラス(silica glass)を用いた。真空チェンバーに入射されたレーザーに対してターゲット基板40で6mm×1mmのサイズを有するようにフォーカシングレンズ30を調節し、レーザーのパワー強度(power density)は2J/cm2に設定した。
図2a〜図2cは、図1のPLD装備を用いて本発明の人工格子を形成するための製造工程を段階別に示した断面図である。図2aに示すように、MgO基板100をアセトン、メタノール、TCEでそれぞれ5分間超音波洗浄した後、窒素で乾燥させる。次に、乾燥された上記基板100を銀ペースト(silver paste)でヒーター40に付着させ乾燥させた後、パルスレーザー蒸着装備(PLD-248nm KrF excimer laser)を用いてMgO(100)単結晶基板100上に下部電極La(Sr,Co)O3(LSCO)層110を形成する。以後、図2b及び図2cに示すように、入射されたレーザーを回転するターゲットに加えて薄膜の蒸着がなされるが、二つのターゲットを同時に装着してそれぞれ任意の厚さを有するPTO(PbTiO3)層120とPZO(PbZrO3)層130を蒸着する。この時、回転するターゲット60の速度は11rpmである。また、蒸着時の蒸着温度は500℃にし、1分当りに10℃昇温させ、酸素分圧は100mTorrを維持する。PZO層とPTO層の蒸着速度は各々8pulse/1単位格子と7pulse/1単位格子であり、レーザーは1秒当り1パルスでターゲットに入射される。
30:フォーカシングレンズ 40:基板
50:ヒーター 60:ターゲット
100:単結晶基板 110:酸化物電極
120:PTO層 130:PZO層
Claims (5)
- 相異なる分極特性を有する誘電体物質であるPbTiO 3 およびPbZrO 3 のそれぞれの単位格子を、前記誘電体物質の中心イオンが前記単位格子の体心に規則的に配置されるように、面指数が(100)のMgO基板上に形成されたLa(Sr,Co)O 3 (LSCO)下部電極上に接してPbTiO 3、 PbZrO 3 の順に原子単位厚さで1層ずつ積層して、前記誘電体物質と異なる電気分極特性の異方性を有する単位構造を形成し、前記単位構造を1周期から5周期の範囲で繰り返し積層して構成され、
前記電気分極特性を有する前記単位構造は、基板に垂直な180°ドメイン構造のみを有することを特徴とする強誘電体酸化物人工格子。 - 前記単位構造は前記基板に垂直で、前記基板の上下2方向にのみ電気分極を有し、これによる電気分極特性を有することを特徴とする請求項1に記載の強誘電体酸化物人工格子。
- 面指数が(100)のMgOからなる単結晶基板と、
前記単結晶基板上に形成されたLa(Sr,Co)O 3 (LSCO)からなる下部電極と、
前記下部電極上に形成される請求項1または2に記載の強誘電体酸化物人工格子と、
を備える超高密度情報保存媒体。 - 相異なる分極特性を有する誘電体物質であるPbTiO 3 およびPbZrO 3 のそれぞれの単位格子を、前記誘電体物質の中心イオンが前記単位格子の体心に規則的に配置されるように、面指数が(100)のMgO基板上に形成されたLa(Sr,Co)O 3 (LSCO)下部電極上に接してPbTiO 3、 PbZrO 3 の順に原子単位厚さで1層ずつ積層して、単位構造を形成する工程であって、前記誘電体物質と異なる電気分極特性の異方性を有する前記単位構造を形成する工程と、
前記単位構造を1周期から5周期の範囲で繰り返し積層する工程と、
を備え、
前記電気分極特性を有する前記単位構造は、基板に垂直な180°ドメイン構造のみを有することを特徴とする強誘電体酸化物人工格子の製造方法。 - 前記単位構造は基板に垂直で、前記基板の上下2方向にのみ電気分極を有し、これによる前記電気分極特性を有するように形成されることを特徴とする請求項4に記載の強誘電体酸化物人工格子の製造方法。
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KR10-2005-0136245 | 2005-12-31 | ||
KR20050136245 | 2005-12-31 | ||
KR10-2006-0045081 | 2006-05-19 | ||
KR1020060045081A KR100784639B1 (ko) | 2005-12-31 | 2006-05-19 | 강유전체 산화물 인공격자, 그의 제작 방법 및 초고밀도 정보저장 매체 |
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JP2007182368A JP2007182368A (ja) | 2007-07-19 |
JP5204969B2 true JP5204969B2 (ja) | 2013-06-05 |
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CN100561767C (zh) * | 2005-09-23 | 2009-11-18 | 清华大学 | 铁电畴阵列结构及其制备方法,及具有该结构的铁电膜 |
US20080232228A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Systems and methods of writing and reading a ferro-electric media with a probe tip |
US20080316897A1 (en) * | 2007-06-19 | 2008-12-25 | Nanochip, Inc. | Methods of treating a surface of a ferroelectric media |
US20080318086A1 (en) * | 2007-06-19 | 2008-12-25 | Nanochip, Inc. | Surface-treated ferroelectric media for use in systems for storing information |
US7965375B2 (en) * | 2007-07-03 | 2011-06-21 | Qimoda Ag | Lithography mask, rewritable mask, process for manufacturing a mask, device for processing a substrate, lithographic system and a semiconductor device |
US7626846B2 (en) * | 2007-07-16 | 2009-12-01 | Nanochip, Inc. | Method and media for improving ferroelectric domain stability in an information storage device |
US7867786B2 (en) * | 2007-12-18 | 2011-01-11 | Intel Corporation | Ferroelectric layer with domains stabilized by strain |
US20090201015A1 (en) * | 2008-02-12 | 2009-08-13 | Nanochip, Inc. | Method and device for detecting ferroelectric polarization |
US20090213492A1 (en) * | 2008-02-22 | 2009-08-27 | Nanochip, Inc. | Method of improving stability of domain polarization in ferroelectric thin films |
US20100002563A1 (en) * | 2008-07-01 | 2010-01-07 | Nanochip, Inc. | Media with tetragonally-strained recording layer having improved surface roughness |
US8227896B2 (en) * | 2009-12-11 | 2012-07-24 | International Business Machines Corporation | Resistive switching in nitrogen-doped MgO |
CN103080003B (zh) * | 2010-11-09 | 2016-08-03 | 株式会社尼康 | 碳薄膜、光学元件成形用模具及光学元件的制造方法 |
CN103882508A (zh) * | 2014-02-19 | 2014-06-25 | 浙江大学 | 一种一维结构钛酸铅/锆酸铅复合纳米纤维的制备方法 |
US9721751B2 (en) * | 2014-08-22 | 2017-08-01 | The Board Of Trustees Of The Leland Stanford Junior University | Electron microscopy specimen and method of fabrication |
CN113594364B (zh) * | 2021-08-06 | 2023-09-19 | 佛山湘潭大学绿色智造研究院 | 一种多涡旋铁电畴的多逻辑态存储单元及电力调控方法 |
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US5985404A (en) * | 1996-08-28 | 1999-11-16 | Tdk Corporation | Recording medium, method of making, and information processing apparatus |
EP0826643B1 (en) * | 1996-08-30 | 2002-03-13 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Crystal-oriented ceramics and methods for producing the same |
JP3633304B2 (ja) * | 1997-09-22 | 2005-03-30 | 株式会社村田製作所 | 強誘電体薄膜素子の製造方法 |
KR100469750B1 (ko) | 2002-02-23 | 2005-02-02 | 학교법인 성균관대학 | 다층산화물 인공격자를 갖는 소자 |
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