JP2015176895A - 不揮発性メモリ - Google Patents
不揮発性メモリ Download PDFInfo
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- JP2015176895A JP2015176895A JP2014050159A JP2014050159A JP2015176895A JP 2015176895 A JP2015176895 A JP 2015176895A JP 2014050159 A JP2014050159 A JP 2014050159A JP 2014050159 A JP2014050159 A JP 2014050159A JP 2015176895 A JP2015176895 A JP 2015176895A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 229910021389 graphene Inorganic materials 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 239000007784 solid electrolyte Substances 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 92
- 238000000034 method Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
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- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】不揮発性メモリは、第1方向に伸びる複数本の第1導電型の第1配線層2Aと、第1方向に対して交差した第2方向に伸びる複数本の第2導電型の第2配線層7Aと、第1配線層2Aと第2配線層7Aの交点にメモリセル4Aと、メモリセル4Aの周辺と接続した吸蔵体5Aと、メモリセル4Aと吸蔵体5Aのいずれかまたは両方に存在するインターカラント6Aとを有する。
【選択図】図1
Description
p型の第1配線層2A、Bは、第1方向に伸びる複数本のp型の配線層である。複数本の配線は、平行に配置される。第1配線層2A、Bは、p型の第1層状物質を含む。第1層状物質は、層状物質と層状物質の層間または層内または側壁に存在する元素又は化合物(ドーパント)を含む。
2 グラフェン配線層
3 メモリセル
4 絶縁層
5 吸蔵体
6 インターカラント
7 グラフェン配線層
Claims (8)
- 第1方向に伸びる複数本の第1導電型の第1配線層と、
前記第1方向に対して交差した第2方向に伸びる複数本の第2導電型の第2配線層と、
前記第1配線層と前記第2配線層の交点にメモリセルと、
前記メモリセルの周辺と接続した吸蔵体と、
前記メモリセルと前記吸蔵体のいずれかまたは両方に存在するインターカラントとを有することを特徴とする不揮発性メモリ。 - 前記メモリセルは、空隙を有することを特徴とする請求項1に記載の不揮発性メモリ。
- 前記メモリセルは、空隙と層状物質を有することを特徴とする請求項1又は2に記載の不揮発性メモリ。
- 前記第1配線層と前記第2配線層は、0.1eV以上のバンドギャップを有する多層グラフェン層であることを特徴とする請求項1乃至3のいずれか1項に記載の不揮発性メモリ。
- 前記インターカラントは、前記メモリセルの抵抗値を変化させる物質であって、
前記インターカラントは、前記メモリセルに発生した電場によって、前記メモリセルと前記吸蔵体の間を移動することが可能である請求項1乃至4のいずれか1項に記載の不揮発性メモリ。 - 前記吸蔵体は、絶縁性であることを特徴とする請求項1乃至5のいずれか1項に記載の不揮発性メモリ。
- 前記吸蔵体は、多孔質アルミナ、アモルファスカーボンと固体電解質のうちのいずれか1種以上であることを特徴とする請求項1乃至6のいずれか1項に記載の不揮発性メモリ。
- 任意のメモリセルに電場を印加する回路を更に有することを特徴とする請求項1乃至7のいずれか1項に記載の不揮発性メモリ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014050159A JP6169023B2 (ja) | 2014-03-13 | 2014-03-13 | 不揮発性メモリ |
US14/644,960 US20150263280A1 (en) | 2014-03-13 | 2015-03-11 | Nonvolatile memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014050159A JP6169023B2 (ja) | 2014-03-13 | 2014-03-13 | 不揮発性メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015176895A true JP2015176895A (ja) | 2015-10-05 |
JP6169023B2 JP6169023B2 (ja) | 2017-07-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014050159A Expired - Fee Related JP6169023B2 (ja) | 2014-03-13 | 2014-03-13 | 不揮発性メモリ |
Country Status (2)
Country | Link |
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US (1) | US20150263280A1 (ja) |
JP (1) | JP6169023B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102446411B1 (ko) * | 2015-12-16 | 2022-09-22 | 삼성전자주식회사 | 멀티층 그래핀 및 그 형성방법과 멀티층 그래핀을 포함하는 소자 및 그 제조방법 |
EP3208856B1 (en) * | 2016-02-17 | 2019-07-10 | Heraeus Deutschland GmbH & Co. KG | Solid electrolyte for reram |
US10833270B1 (en) * | 2019-05-07 | 2020-11-10 | International Business Machines Corporation | Lateral electrochemical cell with symmetric response for neuromorphic computing |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005236003A (ja) * | 2004-02-19 | 2005-09-02 | Sony Corp | 抵抗変化型不揮発性メモリ、抵抗変化型不揮発性メモリの製造方法、記録方法、再生方法、消去方法、抵抗変化材料微細構造体および抵抗変化材料微細構造体の製造方法 |
JP2008276905A (ja) * | 2007-03-30 | 2008-11-13 | Toshiba Corp | 情報記録再生装置 |
JP2009021431A (ja) * | 2007-07-12 | 2009-01-29 | Hitachi Ltd | 半導体装置 |
JP2010010688A (ja) * | 2008-06-26 | 2010-01-14 | Samsung Electronics Co Ltd | 不揮発性メモリ素子及びその製造方法 |
JP2010199215A (ja) * | 2009-02-24 | 2010-09-09 | Toshiba Corp | スイッチング素子及び不揮発性記憶装置 |
US20110176353A1 (en) * | 2008-12-23 | 2011-07-21 | Zhiyong Li | Memristive Device Having a Porous Dopant Diffusion Element |
JP2011171322A (ja) * | 2010-02-16 | 2011-09-01 | Toshiba Corp | 不揮発性半導体記憶装置、及びその製造方法 |
JP2013143528A (ja) * | 2012-01-12 | 2013-07-22 | Toshiba Corp | 半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102004046392A1 (de) * | 2004-09-24 | 2006-04-06 | Infineon Technologies Ag | Halbleiterspeicher |
WO2008108383A1 (ja) * | 2007-03-02 | 2008-09-12 | Nec Corporation | グラフェンを用いる半導体装置及びその製造方法 |
US8519373B2 (en) * | 2011-08-11 | 2013-08-27 | Micron Technology, Inc. | Memory cells |
KR20130092930A (ko) * | 2012-02-13 | 2013-08-21 | 에스케이하이닉스 주식회사 | 가변 저항 메모리 소자, 이의 제조 방법 및 이의 구동 방법 |
-
2014
- 2014-03-13 JP JP2014050159A patent/JP6169023B2/ja not_active Expired - Fee Related
-
2015
- 2015-03-11 US US14/644,960 patent/US20150263280A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005236003A (ja) * | 2004-02-19 | 2005-09-02 | Sony Corp | 抵抗変化型不揮発性メモリ、抵抗変化型不揮発性メモリの製造方法、記録方法、再生方法、消去方法、抵抗変化材料微細構造体および抵抗変化材料微細構造体の製造方法 |
JP2008276905A (ja) * | 2007-03-30 | 2008-11-13 | Toshiba Corp | 情報記録再生装置 |
JP2009021431A (ja) * | 2007-07-12 | 2009-01-29 | Hitachi Ltd | 半導体装置 |
JP2010010688A (ja) * | 2008-06-26 | 2010-01-14 | Samsung Electronics Co Ltd | 不揮発性メモリ素子及びその製造方法 |
US20110176353A1 (en) * | 2008-12-23 | 2011-07-21 | Zhiyong Li | Memristive Device Having a Porous Dopant Diffusion Element |
JP2010199215A (ja) * | 2009-02-24 | 2010-09-09 | Toshiba Corp | スイッチング素子及び不揮発性記憶装置 |
JP2011171322A (ja) * | 2010-02-16 | 2011-09-01 | Toshiba Corp | 不揮発性半導体記憶装置、及びその製造方法 |
JP2013143528A (ja) * | 2012-01-12 | 2013-07-22 | Toshiba Corp | 半導体装置の製造方法 |
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Publication number | Publication date |
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US20150263280A1 (en) | 2015-09-17 |
JP6169023B2 (ja) | 2017-07-26 |
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