JP2013143528A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】本実施形態によれば、半導体装置の製造方法が提供される。半導体装置の製造方法においては、半導体基板10上に、Siを含む第1層15を形成する。前記第1層に選択的に不純物を拡散することで、前記第1層に不純物領域21および非不純物領域22を形成する。前記第1層上に、金属材料を含む第2層23を形成する。前記第2層に対してアニールを行うことで、前記金属材料を前記非不純物領域に拡散する。
【選択図】図5
Description
図1乃至図16を用いて、第1の実施形態に係る半導体装置(ReRAM)について説明する。第1の実施形態は、不純物領域21および非不純物領域22を有するa−Si層15上に、Agを含む金属層23を形成した後、アニールすることにより非不純物領域22にAgを含浸させて上部電極13を形成する例である。これにより、加工が困難なAg電極を所望の形状に形成することができる。以下に、第1の実施形態について、詳説する。
以下に図1乃至図3を用いて、第1の実施形態に係る半導体装置の構造について説明する。
以下に図4乃至図12を用いて、第1の実施形態に係る半導体装置の製造方法について説明する。
以下に図13乃至図16を用いて、アニール工程におけるAgの拡散について説明する。
上記第1の実施形態によれば、Oを導入した不純物領域21および非不純物領域22を有するa−Si層15上に、Agを含む金属層23を形成する。その後、金属層23に対してアニールすることにより、非不純物領域22にAgを含浸させて上部電極13を形成する。すなわち、a−Si層15内において非不純物領域22を所望の形状に形成し、その形状と同様の形状を有するAg電極を形成する。これにより、加工が困難なAg電極を所望の形状に安定して形成することができ、加工不良を解消することができる。
図17乃至図19を用いて、第2の実施形態に係る半導体装置について説明する。第2の実施形態は、第1の実施形態の変形例であり、第1の実施形態における不純物領域21の代わりに、Agが拡散しないようにa−Si層15上に所望の形状にパターニングされたシリコン酸化膜30を形成する例である。以下に、第2の実施形態について、詳説する。なお、第2の実施形態において、上記第1の実施形態と同様の点については説明を省略し、主に異なる点について説明する。
以下に図17乃至図19を用いて、第2の実施形態に係る半導体装置の製造方法について説明する。
上記第2の実施形態によれば、金属層32に含まれるAgが拡散しないようにa−Si層15上に所望の形状にパターニングされたシリコン酸化膜30を形成し、その形状と同様の形状を有するAg電極を形成する。これにより、第1の実施形態と同様の効果を得ることができる。
図20乃至図30を用いて、第3の実施形態に係る半導体装置について説明する。第3の実施形態は、いわゆる側壁転写加工技術により、a−Siを含む側壁材41を形成し、側壁材41にAgを含浸させて上部電極13を形成する例である。これにより、リソグラフィでは解像不可能な微細パターンのAg電極を形成することができる。以下に、第3の実施形態について、詳説する。なお、第3の実施形態において、上記各実施形態と同様の点については説明を省略し、主に異なる点について説明する。
以下に図20を用いて、第3の実施形態に係る半導体装置の構造について説明する。
以下に図21乃至図30を用いて、第3の実施形態に係る半導体装置の製造方法について説明する。
上記第3の実施形態によれば、第1の実施形態と同様の効果を得ることができる。
図31乃至図40を用いて、第4の実施形態に係る半導体装置について説明する。第4の実施形態は、第3の実施形態の変形例であり、a−Siを含む側壁材41に選択的にAgを含浸させて上部電極13を形成する例である。これにより、第4の実施形態に係る半導体装置は、第1の実施形態と同様の構造を有し、かつ、カラム方向およびロウ方向においてリソグラフィでは解像不可能な寸法を有する。以下に、第4の実施形態について、詳説する。なお、第4の実施形態において、上記各実施形態と同様の点については説明を省略し、主に異なる点について説明する。
以下に図31乃至図40を用いて、第4の実施形態に係る半導体装置の製造方法について説明する。
上記第4の実施形態によれば、第3の実施形態と同様の効果を得ることができる。
図41乃至図50を用いて、第5の実施形態に係る半導体装置について説明する。第5の実施形態は、側壁転写加工技術により、a−Si層67の上部側の一部をリソグラフィでは解像不可能な微細パターンに形成した後、その一部にAgを含浸させて上部電極13を形成し、a−Si層67の下部側に抵抗変化層12を形成する例である。以下に、第5の実施形態について、詳説する。なお、第5の実施形態において、上記各実施形態と同様の点については説明を省略し、主に異なる点について説明する。
以下に図41乃至図50を用いて、第5の実施形態に係る半導体装置の製造方法について説明する。
上記第5の実施形態によれば、第3の実施形態と同様の効果を得ることができる。
図51乃至図57を用いて、第6の実施形態に係る半導体装置について説明する。第6の実施形態は、第5の実施形態の変形例であり、ワード線WLを上部電極13と一体化して形成する例である。以下に、第6の実施形態について、詳説する。なお、第6の実施形態において、上記各実施形態と同様の点については説明を省略し、主に異なる点について説明する。
以下に図51乃至図57を用いて、第6の実施形態に係る半導体装置の製造方法について説明する。
上記第6の実施形態によれば、第5の実施形態と同様の効果を得ることができる。
図58乃至図61を用いて、上述した加工が困難な金属材料の適用例について説明する。
Claims (5)
- 半導体基板上に、Siを含む第1層を形成する工程と、
前記第1層に選択的に不純物を拡散することで、前記第1層に不純物領域および非不純物領域を形成する工程と、
前記第1層上に、金属材料を含む第2層を形成する工程と、
前記第2層に対してアニールを行うことで、前記金属材料を前記非不純物領域に拡散する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 前記金属材料は、AgまたはCuのうち少なくともいずれかを含むことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記不純物は、Oを含むことを特徴とする請求項1または請求項2に記載の半導体装置の製造方法。
- 前記O濃度は、1.0×1021[atoms/cm3]以上であることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記不純物を拡散する工程は、イオン注入法により行われることを特徴とする請求項1乃至請求項4のいずれか1項に記載の半導体装置の製造方法。
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