JP2005129808A - 半導体装置の配線構造及びその製造方法 - Google Patents
半導体装置の配線構造及びその製造方法 Download PDFInfo
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- 239000010941 cobalt Substances 0.000 description 4
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- 239000000654 additive Substances 0.000 description 1
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- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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Abstract
【解決手段】 複数の溝部102を有する第1絶縁膜101と、溝部102間の第1絶縁膜101の上面よりも突出するように形成された複数の配線膜105と、配線膜105の底面に形成されるとともに配線膜105の側面において上面より上方まで形成されている複数のバリア膜103と、配線膜105の上面に形成された金属膜からなる第1キャップ膜106と、少なくとも第1キャップ膜106及びバリア膜103の側面に形成されている第2キャップ膜107とを備えることを特徴とする半導体装置の配線構造。
【選択図】 図11
Description
〔構造〕
図9は、本発明の第1実施形態に係る配線構造1の断面図である。この配線構造1は、絶縁膜101と、複数のバリア膜103と、銅Cu又は銅合金からなる複数の配線膜105と、CoxWyPz、Co、CoxMoyPzなどのコバルトCoを主成分とする金属膜またはNixWyPz、NixMoyPzなどのニッケルNiを主成分とする金属膜からなる第1のキャップ膜106と、SixNy、SixOyNz、SixCyを主成分とする絶縁体からなる第2のキャップ膜107とを備えている。
以下、配線構造1の製造方法を図1から図9を参照して説明する。
・ 次に、図5に示すように、配線膜105、バリア膜103をCMP法により研磨し、配線膜105及びバリア膜103を平坦化する。より詳細には、絶縁膜101が露出するまで配線膜105、バリア膜103を除去して、配線膜105及びバリア膜103を溝部102内にのみ残す。この結果、配線膜105及びバリア膜103の上面が絶縁膜101の表面と一致するようになる。
本実施形態に係る配線構造1では、CuイオンやCuヒロックのリーク源となる配線膜105の上面105aの縁部と、リーク電流のパスとなる絶縁膜101の界面101aとが上下方向に離れているため、配線膜105の上面105aの縁部からCuイオン又はCuヒロックが絶縁膜の界面101aに到達し難い。さらに、配線膜105の上面105aを金属膜からなるキャップ膜106で覆っているので、配線膜105とキャップ膜106との界面、即ち配線膜105の上面105aでの密着性が高く、配線膜105の上面105aにおいてエレクトロマイグレーションを抑制することができる。また、配線膜105及びバリア膜103の側面が絶縁効果の大きい第2のキャップ膜107で覆われているので、隣接する配線間でのリーク電流を抑制し、配線間での絶縁耐性を高めることができる。
〔構成〕
図11は、本発明の第2実施形態に係る配線構造1の断面図である。この配線構造1は、第1実施形態に係る配線構造1において、キャップ膜107が、溝部102ごとに分離され、キャップ膜106及びバリア膜103の側面に形成されている。より詳細には、配線構造1は、絶縁膜101と、複数のバリア膜103と、銅Cu又は銅合金からなる複数の配線膜105と、CoxWyPz、Co、CoxMoyPzなどのコバルトCoを主成分とする金属膜またはNixWyPz、NixMoyPzなどのニッケルNiを主成分とする金属膜からなる第1のキャップ膜106と、SixNy、SixOyNz、SixCyを主成分とする絶縁体からなる第2のキャップ膜107とを備えている。
図11乃至図12は、第2実施形態に係る配線構造1の製造方法を説明する図である。
本実施形態でも、CuイオンやCuヒロックのリーク源となる配線膜105の上面105aの縁部と、リーク電流のパスとなる絶縁膜101の界面101aとが上下方向に離れているため、配線膜105の上面105aの縁部からCuイオン又はCuヒロックが絶縁膜の界面101aに到達し難い。さらに、配線膜105の上面105aを金属膜からなるキャップ膜106で覆っているので、配線膜105とキャップ膜106との界面、即ち配線膜105の上面105aでの密着性が高く、配線膜105の上面105aにおいてエレクトロマイグレーションを抑制することができる。また、配線膜105及びバリア膜103の側面が絶縁効果の大きい第2のキャップ膜107で覆われているので、隣接する配線間でのリーク電流を抑制し、配線間での絶縁耐性を高めることができる。
101a 第1の絶縁膜の界面
102 溝部
103 バリア膜
104 Cuシード膜
105 配線膜
105a 配線膜の上面
106 第1のキャップ膜
107 第2のキャップ膜
108 第2の絶縁膜
Claims (31)
- 複数の溝部を有する第1絶縁膜と、
前記溝部間の前記第1絶縁膜の上面よりも突出するように形成された複数の配線膜と、
前記配線膜の底面に形成されるとともに、前記配線膜の側面において前記上面より上方まで形成されている複数のバリア膜と、
前記配線膜の上面に形成された金属膜からなる第1キャップ膜と、
少なくとも前記第1キャップ膜及び前記バリア膜の側面に形成されている第2キャップ膜と、を備えることを特徴とする半導体装置の配線構造。 - 前記第1キャップ膜は、無電界メッキによって形成されていることを特徴とする、請求項1に記載の半導体装置の配線構造。
- 前記第1キャップ膜は、CoまたはNiを主成分とする金属膜であることを特徴とする、請求項2に記載の半導体装置の配線構造。
- 前記配線膜は、CuまたはCuを主成分とする金属膜であることを特徴とする、請求項3に記載の半導体装置の配線構造。
- 前記第2キャップ膜は、前記第1キャップ膜の上面から前記第1絶縁膜の前記上面に渡って全面に形成されていることを特徴とする、請求項1に記載の半導体装置の配線構造。
- 前記第2キャップ膜は、SixNy、SixOyNz、SixCyまたはSixCyを主成分とする絶縁膜であることを特徴とする、請求項5に記載の半導体装置の配線構造。
- 前記第2キャップ膜は、前記溝部ごとに分離されて形成されていることを特徴とする、請求項1に記載の半導体装置の配線構造。
- 前記第2キャップ膜は、前記第1キャップ膜及び前記バリア膜の側面にのみ形成されていることを特徴とする、請求項7に記載の半導体装置の配線構造。
- 前記第2キャップ膜は、SixNy、SixOyNz、SixCy又はSixCyを主成分とする絶縁膜であることを特徴とする、請求項8に記載の半導体装置の配線構造。
- 前記第2キャップ膜は、TaxNy、TaまたはTaxSiyNzからなる金属膜であることを特徴とする、請求項8に記載の半導体装置の配線構造。
- 前記第2キャップ膜は、TixNyまたはTixSiyNzからなる金属膜であることを特徴とする、請求項8に記載の半導体装置の配線構造。
- 前記第2キャップ膜は、WxNyまたはWxSiyNzからなる金属膜であることを特徴とする、請求項8に記載の半導体装置の配線構造。
- 前記バリア膜は、TaxNy、TaまたはTaxSiyNzからなる金属膜であることを特徴とする、請求項1に記載の半導体装置の配線構造。
- 前記バリア膜は、TixNyまたはTixSiyNzからなる金属膜であることを特徴とする、請求項1に記載の半導体装置の配線構造。
- 前記バリア膜は、WxNyまたはWxSiyNzからなる金属膜であることを特徴とする、請求項1に記載の半導体装置の配線構造。
- 前記配線膜は前記バリア膜よりも窪んでいることを特徴とする、請求項1に記載の半導体装置の配線構造。
- 第1絶縁膜上に複数の溝部を形成するステップと、
前記第1絶縁膜上にバリア膜を形成するステップと、
前記溝部内の前記バリア膜上に配線膜を形成するステップと、
前記溝部間の前記第1絶縁膜が露出するように、前記配線膜及び前記バリア膜を除去するステップと、
前記配線膜上に金属膜からなる第1のキャップ膜を形成するステップと、
前記第1絶縁膜を薄膜化して、前記配線膜及び前記バリア膜を前記第1絶縁膜の上面よりも突出させるステップと、
第2のキャップ膜を全面に形成するステップと、
を含むことを特徴とする半導体装置の配線構造の製造方法。 - 前記第1キャップ膜を無電界メッキによって形成することを特徴とする、請求項17に記載の半導体装置の配線構造の製造方法。
- 前記第1キャップ膜は、CoまたはNiを主成分とする金属膜であることを特徴とする、請求項18に記載の半導体装置の配線構造の製造方法。
- 前記配線膜は、CuまたはCuを主成分とする金属膜であることを特徴とする、請求項19に記載の半導体装置の配線構造の製造方法。
- 前記第2キャップ膜をエッチバックすることにより、前記第2キャップ膜を前記溝部ごとに分離するステップをさらに含むことを特徴とする、請求項17に記載の半導体装置の配線構造の製造方法。
- 前記第1キャップ膜及び前記バリア膜の側面にのみ前記第2キャップ膜を残すことを特徴とする、請求項21に記載の半導体装置の配線構造の製造方法。
- 前記第2キャップ膜は、SixNy、SixOyNz、SixCy又はSixCyを主成分とする絶縁膜であることを特徴とする、請求項22に記載の半導体装置の配線構造の製造方法。
- 前記第2キャップ膜は、TaxNy、TaまたはTaxSiyNzからなる金属膜であることを特徴とする、請求項22に記載の半導体装置の配線構造の製造方法。
- 前記第2キャップ膜は、TixNyまたはTixSiyNzからなる金属膜であることを特徴とする、請求項22に記載の半導体装置の配線構造の製造方法。
- 前記第2キャップ膜は、WxNyまたはWxSiyNzからなる金属膜であることを特徴とする、請求項22に記載の半導体装置の配線構造の製造方法。
- 前記配線膜及び前記バリア膜を除去するステップは、
前記バリア膜をストッパーとして前記配線膜を研磨するステップと、
前記第1絶縁膜をストッパーとして前記配線膜及び前記バリア膜を研磨するステップと、を含むことを特徴とする請求項17に記載の半導体装置の配線構造の製造方法。 - 前記配線膜及び前記バリア膜を研磨するステップでは、前記配線膜の上面が前記バリア膜の上面よりも窪むように研磨することを特徴とする、請求項27に記載の半導体装置の配線構造の製造方法。
- 前記バリア膜は、TaxNy、TaまたはTaxSiyNzからなる金属膜であることを特徴とする、請求項27に記載の半導体装置の配線構造の製造方法。
- 前記バリア膜は、TixNyまたはTixSiyNzからなる金属膜であることを特徴とする、請求項27に記載の半導体装置の配線構造の製造方法。
- 前記バリア膜は、WxNyまたはWxSiyNzからなる金属膜であることを特徴とする、請求項27に記載の半導体装置の配線構造の製造方法。
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