JP2005119906A - タンタル酸リチウム基板およびその製造方法 - Google Patents
タンタル酸リチウム基板およびその製造方法 Download PDFInfo
- Publication number
- JP2005119906A JP2005119906A JP2003356517A JP2003356517A JP2005119906A JP 2005119906 A JP2005119906 A JP 2005119906A JP 2003356517 A JP2003356517 A JP 2003356517A JP 2003356517 A JP2003356517 A JP 2003356517A JP 2005119906 A JP2005119906 A JP 2005119906A
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- JP
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- Prior art keywords
- substrate
- lithium tantalate
- crystal
- heat treatment
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 118
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 239000012298 atmosphere Substances 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000011812 mixed powder Substances 0.000 claims abstract description 15
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 abstract description 11
- 230000005616 pyroelectricity Effects 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 238000002834 transmittance Methods 0.000 description 14
- 238000012360 testing method Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000010897 surface acoustic wave method Methods 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 235000019219 chocolate Nutrition 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Abstract
【解決手段】 チョコラスキー法で育成したタンタル酸リチウム結晶を基板の状態に加工して得たLT基板をAlとAl2O3の混合粉末に埋め込み、350〜600℃の保持温度で熱処理して、体積抵抗率が106〜108Ω・cmの範囲に制御されたタンタル酸リチウム基板を製造することを特徴とする。好ましくは、上記熱処理を不活性ガスの減圧雰囲気下で行うことを特徴とする。
【選択図】 なし
Description
タンタル酸リチウム(LT)基板を前提とし、
体積抵抗率が106〜108Ω・cmの範囲に制御されたことを特徴とし、
請求項2に係る発明は、
請求項1記載の発明に係るタンタル酸リチウム基板を前提とし、
AlとAl2O3の混合粉末に埋め込まれて、350〜600℃の保持温度で熱処理された熱履歴を有することを特徴とするものである。
チョコラスキー法で育成したタンタル酸リチウム結晶を用いてタンタル酸リチウム基板を製造する方法を前提とし、
基板の状態に加工されたタンタル酸リチウム結晶をAlとAl2O3の混合粉末に埋め込み、350〜600℃の保持温度で熱処理して、体積抵抗率が106〜108Ω・cmの範囲に制御されたタンタル酸リチウム基板を製造することを特徴とし、
請求項4に係る発明は、
請求項3記載の発明に係るタンタル酸リチウム基板の製造方法を前提とし、
上記熱処理を不活性ガスの減圧雰囲気下で行うことを特徴とするものである。
(比較例1)
上記熱処理を、AlとAl2O3の混合粉末中に基板を埋め込むことなく、窒素ガス雰囲気、大気圧条件中、1000℃、40時間とした以外は実施例1と同様な処理を行った。
(比較例2〜3)
上記熱処理を、AlとAl2O3の混合粉末中に基板を埋め込むことなく、窒素ガス雰囲気、大気圧条件中、800℃(比較例2)、480℃(比較例3)、40時間とした以外は実施例1と同様な処理を行った。
Claims (4)
- 体積抵抗率が106〜108Ω・cmの範囲に制御されたことを特徴とするタンタル酸リチウム基板。
- AlとAl2O3の混合粉末に埋め込まれて、350〜600℃の保持温度で熱処理された熱履歴を有することを特徴とする請求項1記載のタンタル酸リチウム基板。
- チョコラスキー法で育成したタンタル酸リチウム結晶を用いてタンタル酸リチウム基板を製造する方法において、
基板の状態に加工されたタンタル酸リチウム結晶をAlとAl2O3の混合粉末に埋め込み、350〜600℃の保持温度で熱処理して、体積抵抗率が106〜108Ω・cmの範囲に制御されたタンタル酸リチウム基板を製造することを特徴とするタンタル酸リチウム基板の製造方法。 - 上記熱処理を不活性ガスの減圧雰囲気下で行うことを特徴とする請求項3記載のタンタル酸リチウム基板の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003356517A JP4063190B2 (ja) | 2003-10-16 | 2003-10-16 | タンタル酸リチウム基板の製造方法 |
US10/574,276 US7442250B2 (en) | 2003-10-16 | 2004-10-07 | Lithium tantalate substrate and method for producing same |
CNB200480027724XA CN100351436C (zh) | 2003-10-16 | 2004-10-07 | 钽酸锂基板及其制造方法 |
PCT/JP2004/015194 WO2005038099A1 (ja) | 2003-10-16 | 2004-10-07 | タンタル酸リチウム基板およびその製造方法 |
TW093131081A TWI367965B (en) | 2003-10-16 | 2004-10-14 | Methog for producing lithium tantalate substrate |
KR1020067004711A KR101213411B1 (ko) | 2003-10-16 | 2006-03-08 | 탄탈산 리튬 기판 및 그 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003356517A JP4063190B2 (ja) | 2003-10-16 | 2003-10-16 | タンタル酸リチウム基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005119906A true JP2005119906A (ja) | 2005-05-12 |
JP4063190B2 JP4063190B2 (ja) | 2008-03-19 |
Family
ID=34463209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003356517A Expired - Lifetime JP4063190B2 (ja) | 2003-10-16 | 2003-10-16 | タンタル酸リチウム基板の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7442250B2 (ja) |
JP (1) | JP4063190B2 (ja) |
KR (1) | KR101213411B1 (ja) |
CN (1) | CN100351436C (ja) |
TW (1) | TWI367965B (ja) |
WO (1) | WO2005038099A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007176715A (ja) * | 2005-12-27 | 2007-07-12 | Sumitomo Metal Mining Co Ltd | タンタル酸リチウム基板の製造方法 |
US7527755B2 (en) | 2002-06-28 | 2009-05-05 | Silicon Light Machines Corporation | Method for increasing bulk conductivity of a ferroelectric material such as lithium tantalate |
US8973229B2 (en) | 2007-12-25 | 2015-03-10 | Murata Manufacturing Co., Ltd. | Method for manufacturing composite piezoelectric substrate |
JP7319592B2 (ja) | 2020-01-22 | 2023-08-02 | 住友金属鉱山株式会社 | タンタル酸リチウム基板の製造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3938147B2 (ja) * | 2003-04-08 | 2007-06-27 | 住友金属鉱山株式会社 | タンタル酸リチウム基板およびその製造方法 |
JP4063191B2 (ja) * | 2003-10-16 | 2008-03-19 | 住友金属鉱山株式会社 | タンタル酸リチウム基板の製造方法 |
US20090020069A1 (en) * | 2007-01-26 | 2009-01-22 | Eugene Standifer | Multi-Beam Optical Afterheater for Laser Heated Pedestal Growth |
JP6238478B2 (ja) * | 2016-03-16 | 2017-11-29 | 信越化学工業株式会社 | タンタル酸リチウム単結晶基板の製造方法 |
CN106521633B (zh) * | 2016-12-26 | 2019-12-13 | 福建晶安光电有限公司 | 一种钽酸锂晶体基片的黑化处理方法 |
CN106868595B (zh) * | 2017-02-15 | 2019-03-15 | 宁夏钜晶源晶体科技有限公司 | 大厚度黑色钽酸锂晶片的制造方法 |
CN112028600A (zh) * | 2020-09-14 | 2020-12-04 | 吉林大学 | 一种制备顺电相LiTaO3的方法 |
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JPS539279A (en) | 1976-07-14 | 1978-01-27 | Fujitsu Ltd | Annealing method for metallic oxide single crystal |
JPS573800A (en) | 1980-06-05 | 1982-01-09 | Toshiba Corp | Heat-treating method of single crystal |
JPS579279A (en) * | 1980-06-19 | 1982-01-18 | Nissan Motor Co Ltd | Motor controlling circuit for automotive |
JPS6335499A (ja) | 1986-07-31 | 1988-02-16 | Hitachi Metals Ltd | リチウムタンタレ−ト単結晶の単一分域化方法 |
JPH0637350B2 (ja) * | 1987-02-27 | 1994-05-18 | 日立金属株式会社 | 単分域タンタル酸リチウム単結晶の製造方法 |
JPH0637350A (ja) | 1992-07-15 | 1994-02-10 | Nippon Telegr & Teleph Corp <Ntt> | 光信号受信器 |
JP2818344B2 (ja) | 1992-12-25 | 1998-10-30 | 日本碍子株式会社 | 酸化物単結晶の製造方法及びその装置 |
US6319430B1 (en) * | 1997-07-25 | 2001-11-20 | Crystal Technology, Inc. | Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same |
DE69819971T2 (de) | 1997-07-25 | 2004-09-02 | Crystal Technology, Inc., Palo Alto | Vorbehandelte Kristalle aus Lithiumniobat und Lithiumtantalat und das Verfahren zu ihrer Herstellung |
EP0921215A1 (en) | 1997-12-05 | 1999-06-09 | Crystal Technology, Inc. | Electromagnetic radiation absorbant crystals of lithium niobate and lithium tantalate and methods of preparing the same |
US6786967B1 (en) * | 1998-05-11 | 2004-09-07 | California Institute Of Technology | Ion exchange waveguides and methods of fabrication |
US6567598B1 (en) * | 1998-05-11 | 2003-05-20 | California Institute Of Technology | Titanium-indiffusion waveguides |
JP2004328712A (ja) | 2003-01-16 | 2004-11-18 | Sumitomo Metal Mining Co Ltd | タンタル酸リチウム基板およびその製造方法 |
JP3938147B2 (ja) | 2003-04-08 | 2007-06-27 | 住友金属鉱山株式会社 | タンタル酸リチウム基板およびその製造方法 |
JP4071670B2 (ja) | 2003-04-17 | 2008-04-02 | 信越化学工業株式会社 | 単一分域化されたタンタル酸リチウム結晶の製造方法 |
-
2003
- 2003-10-16 JP JP2003356517A patent/JP4063190B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-07 WO PCT/JP2004/015194 patent/WO2005038099A1/ja active Application Filing
- 2004-10-07 US US10/574,276 patent/US7442250B2/en active Active
- 2004-10-07 CN CNB200480027724XA patent/CN100351436C/zh active Active
- 2004-10-14 TW TW093131081A patent/TWI367965B/zh active
-
2006
- 2006-03-08 KR KR1020067004711A patent/KR101213411B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7527755B2 (en) | 2002-06-28 | 2009-05-05 | Silicon Light Machines Corporation | Method for increasing bulk conductivity of a ferroelectric material such as lithium tantalate |
JP2007176715A (ja) * | 2005-12-27 | 2007-07-12 | Sumitomo Metal Mining Co Ltd | タンタル酸リチウム基板の製造方法 |
US8973229B2 (en) | 2007-12-25 | 2015-03-10 | Murata Manufacturing Co., Ltd. | Method for manufacturing composite piezoelectric substrate |
JP7319592B2 (ja) | 2020-01-22 | 2023-08-02 | 住友金属鉱山株式会社 | タンタル酸リチウム基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200523408A (en) | 2005-07-16 |
US7442250B2 (en) | 2008-10-28 |
KR20060126925A (ko) | 2006-12-11 |
US20070006797A1 (en) | 2007-01-11 |
CN100351436C (zh) | 2007-11-28 |
TWI367965B (en) | 2012-07-11 |
WO2005038099A1 (ja) | 2005-04-28 |
CN1856599A (zh) | 2006-11-01 |
JP4063190B2 (ja) | 2008-03-19 |
KR101213411B1 (ko) | 2012-12-18 |
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