JPS539279A - Annealing method for metallic oxide single crystal - Google Patents

Annealing method for metallic oxide single crystal

Info

Publication number
JPS539279A
JPS539279A JP8287876A JP8287876A JPS539279A JP S539279 A JPS539279 A JP S539279A JP 8287876 A JP8287876 A JP 8287876A JP 8287876 A JP8287876 A JP 8287876A JP S539279 A JPS539279 A JP S539279A
Authority
JP
Japan
Prior art keywords
single crystal
metallic oxide
annealing method
oxide single
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8287876A
Other languages
Japanese (ja)
Other versions
JPS544710B2 (en
Inventor
Toru Sato
Hisao Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8287876A priority Critical patent/JPS539279A/en
Publication of JPS539279A publication Critical patent/JPS539279A/en
Publication of JPS544710B2 publication Critical patent/JPS544710B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To anneal metallic oxide single crystal without causing devitrification of the surface of the single crystal and without being subjected to the influence of the powder by the heating of single crystal enfolded in the powder of other metallic oxide which does not fuse into the single crystal at a temperature at which no diffusion or no fusion of the powder into the single crystal is effected.
JP8287876A 1976-07-14 1976-07-14 Annealing method for metallic oxide single crystal Granted JPS539279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8287876A JPS539279A (en) 1976-07-14 1976-07-14 Annealing method for metallic oxide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8287876A JPS539279A (en) 1976-07-14 1976-07-14 Annealing method for metallic oxide single crystal

Publications (2)

Publication Number Publication Date
JPS539279A true JPS539279A (en) 1978-01-27
JPS544710B2 JPS544710B2 (en) 1979-03-09

Family

ID=13786532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8287876A Granted JPS539279A (en) 1976-07-14 1976-07-14 Annealing method for metallic oxide single crystal

Country Status (1)

Country Link
JP (1) JPS539279A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS545900A (en) * 1977-06-16 1979-01-17 Toshiba Corp Method of heat treating single crystal
JPS63310800A (en) * 1987-06-10 1988-12-19 Fujitsu Ltd Formation of single domain of single crystal
WO2005038097A1 (en) * 2003-10-16 2005-04-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and process for producing the same
US7442250B2 (en) 2003-10-16 2008-10-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and method for producing same
US7713511B2 (en) 2003-10-16 2010-05-11 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and process for its manufacture

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS545900A (en) * 1977-06-16 1979-01-17 Toshiba Corp Method of heat treating single crystal
JPS5636160B2 (en) * 1977-06-16 1981-08-21
JPS63310800A (en) * 1987-06-10 1988-12-19 Fujitsu Ltd Formation of single domain of single crystal
WO2005038097A1 (en) * 2003-10-16 2005-04-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and process for producing the same
US7442250B2 (en) 2003-10-16 2008-10-28 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and method for producing same
US7628853B2 (en) 2003-10-16 2009-12-08 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and process for its manufacture
US7713511B2 (en) 2003-10-16 2010-05-11 Sumitomo Metal Mining Co., Ltd. Lithium tantalate substrate and process for its manufacture

Also Published As

Publication number Publication date
JPS544710B2 (en) 1979-03-09

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