JP2005093757A - 薄膜半導体装置および薄膜半導体装置の製造方法 - Google Patents
薄膜半導体装置および薄膜半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】 単結晶Si薄膜トランジスタ11の形成領域において、その絶縁層中の所定箇所に中継パッド33を形成する。この絶縁層を貫通する接続配線は、中継パッド33を介して接続配線34・35として形成される。
【選択図】 図1
Description
2 絶縁基板
4 層間絶縁膜(絶縁層)
5 層間平坦化絶縁膜(絶縁層)
10 単結晶Si基板(転写用基板)
11 単結晶Si薄膜トランジスタ(転写デバイス)
12 ゲート電極
13 平坦化層(絶縁層)
14 ゲート絶縁膜(絶縁層)
15a 半導体層
21 多結晶Si薄膜トランジスタ(成膜デバイス)
23 ゲート絶縁膜(絶縁層)
33 中継パッド
34 接続配線(第1の接続配線)
35 接続配線(第2の接続配線)
Claims (7)
- 絶縁基板上に、単結晶Siからなる活性層を備えた単結晶薄膜デバイスと非単結晶Siからなる活性層を備えた非単結晶Si薄膜デバイスとを備えている半導体装置において、
上記単結晶薄膜デバイスの形成領域では、該単結晶薄膜デバイスの絶縁層中の所定箇所に中継パッドが形成されており、さらに中継パッドからコンタクトホールを介して単結晶薄膜デバイスの単結晶層の所定箇所に接続された金属またはこれに準ずる配線と接続されていることを特徴とする薄膜半導体装置。 - 前記中継パッドに非単結晶Si薄膜デバイスの金属配線が接続されていることを特徴とする請求項1に記載の薄膜半導体装置。
- 上記中継パッドは上記単結晶薄膜デバイスのゲート電極と同一層に形成されていることを特徴とする請求項1に記載の薄膜半導体装置。
- 上記中継パッドは上記単結晶薄膜デバイスの活性層と同一層に形成されていることを特徴とする請求項1に記載の薄膜半導体装置。
- 絶縁基板上に、単結晶Siからなる活性層を備えた単結晶薄膜デバイスと非単結晶Siからなる活性層を備えた非単結晶Si薄膜デバイスとを備えている薄膜半導体装置の製造方法において、
上記単結晶薄膜デバイスの少なくとも一部を形成する第1の工程と、
上記単結晶薄膜デバイスの少なくとも一部が形成され、所定の濃度とエネルギーで水素イオンもしくは所定の濃度とエネルギーで水素イオンとHe等の希ガスイオンを打ち込んだ単結晶半導体単結晶Siの表面を平坦化および活性化し、これをガラスなどの絶縁基板に接合し熱処理することにより前記イオン注入部から劈開分離し、転写する第2の工程と、
第2の工程の前、あるいは第2の工程の後において、絶縁基板上に非単結晶デバイスを形成する第3の工程と、
絶縁層にコンタクトホールを形成し、該コンタクトホールを介して接続用配線を形成する第4の工程とを有すると共に、
さらに、第1の工程では、
上記単結晶薄膜デバイスの絶縁層中の所定箇所に中継パッドを形成する第5の工程と、
中継パッドからコンタクトホールを介して上記単結晶薄膜デバイスの単結晶層の所定箇所に接続された金属またはこれに準ずる配線と接続され、かつ前記中継パッドに非単結晶Si薄膜デバイスの金属配線を接続する第6の工程とを含み、
第4の工程は、中継パッドにコンタクトホールを介して非単結晶Si薄膜デバイスの金属配線を接続する第2の接続配線の形成を含むものであることを特徴とする薄膜半導体装置の製造方法。 - 上記第5の工程は、上記単結晶薄膜デバイスのゲート電極の形成と同一工程で行われるものであることを特徴とする請求項5に記載の薄膜半導体装置の製造方法。
- 上記第5の工程は、上記単結晶薄膜デバイスの半導体層の形成と同一工程で行われるものであることを特徴とする請求項5に記載の薄膜半導体装置の製造方法。
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Also Published As
Publication number | Publication date |
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US20050067619A1 (en) | 2005-03-31 |
EP1517363A2 (en) | 2005-03-23 |
EP1517363A3 (en) | 2006-06-07 |
KR20050028871A (ko) | 2005-03-23 |
US7488980B2 (en) | 2009-02-10 |
KR100737337B1 (ko) | 2007-07-10 |
JP4651924B2 (ja) | 2011-03-16 |
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