JP2005093579A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2005093579A
JP2005093579A JP2003322584A JP2003322584A JP2005093579A JP 2005093579 A JP2005093579 A JP 2005093579A JP 2003322584 A JP2003322584 A JP 2003322584A JP 2003322584 A JP2003322584 A JP 2003322584A JP 2005093579 A JP2005093579 A JP 2005093579A
Authority
JP
Japan
Prior art keywords
fuse
fuses
semiconductor device
semiconductor substrate
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003322584A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005093579A5 (enExample
Inventor
Yukio Komatsu
幸生 小松
Hiroshi Koyama
啓 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2003322584A priority Critical patent/JP2005093579A/ja
Priority to US10/941,030 priority patent/US7208781B2/en
Publication of JP2005093579A publication Critical patent/JP2005093579A/ja
Publication of JP2005093579A5 publication Critical patent/JP2005093579A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003322584A 2003-09-16 2003-09-16 半導体装置 Pending JP2005093579A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003322584A JP2005093579A (ja) 2003-09-16 2003-09-16 半導体装置
US10/941,030 US7208781B2 (en) 2003-09-16 2004-09-15 Semiconductor device having fuses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003322584A JP2005093579A (ja) 2003-09-16 2003-09-16 半導体装置

Publications (2)

Publication Number Publication Date
JP2005093579A true JP2005093579A (ja) 2005-04-07
JP2005093579A5 JP2005093579A5 (enExample) 2005-06-30

Family

ID=34453887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003322584A Pending JP2005093579A (ja) 2003-09-16 2003-09-16 半導体装置

Country Status (2)

Country Link
US (1) US7208781B2 (enExample)
JP (1) JP2005093579A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010118650A (ja) * 2008-10-16 2010-05-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7176551B2 (en) * 2004-05-19 2007-02-13 United Microelectronics Corp. Fuse structure for a semiconductor device
US7948094B2 (en) * 2007-10-22 2011-05-24 Rohm Co., Ltd. Semiconductor device
JP5248170B2 (ja) * 2008-04-03 2013-07-31 ルネサスエレクトロニクス株式会社 半導体装置
US10134631B2 (en) * 2011-08-17 2018-11-20 International Business Machines Corporation Size-filtered multimetal structures
US20130043556A1 (en) * 2011-08-17 2013-02-21 International Business Machines Corporation Size-filtered multimetal structures
JP2013232620A (ja) * 2012-01-27 2013-11-14 Rohm Co Ltd チップ部品

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06243678A (ja) * 1993-02-19 1994-09-02 Hitachi Ltd ダイナミック型ｒａｍとそのプレート電圧設定方法及び情報処理システム
JP4079600B2 (ja) * 2001-03-06 2008-04-23 株式会社東芝 半導体装置
JP3787591B2 (ja) * 2002-02-14 2006-06-21 セイコーインスツル株式会社 抵抗回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010118650A (ja) * 2008-10-16 2010-05-27 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Also Published As

Publication number Publication date
US7208781B2 (en) 2007-04-24
US20050098803A1 (en) 2005-05-12

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