JP2005089823A - 成膜装置および成膜方法 - Google Patents

成膜装置および成膜方法 Download PDF

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Publication number
JP2005089823A
JP2005089823A JP2003325004A JP2003325004A JP2005089823A JP 2005089823 A JP2005089823 A JP 2005089823A JP 2003325004 A JP2003325004 A JP 2003325004A JP 2003325004 A JP2003325004 A JP 2003325004A JP 2005089823 A JP2005089823 A JP 2005089823A
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Japan
Prior art keywords
film forming
film
gas
chamber
plasma generation
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Pending
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JP2003325004A
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English (en)
Japanese (ja)
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JP2005089823A5 (enExample
Inventor
Seiji Sagawa
誠二 寒川
Toshihisa Nozawa
俊久 野沢
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003325004A priority Critical patent/JP2005089823A/ja
Priority to CNB2004800105722A priority patent/CN100494487C/zh
Priority to KR1020067005339A priority patent/KR100878910B1/ko
Priority to EP04773039.5A priority patent/EP1672093B1/en
Priority to PCT/JP2004/013357 priority patent/WO2005028703A1/ja
Publication of JP2005089823A publication Critical patent/JP2005089823A/ja
Priority to US11/377,291 priority patent/US20060213444A1/en
Publication of JP2005089823A5 publication Critical patent/JP2005089823A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2003325004A 2003-09-17 2003-09-17 成膜装置および成膜方法 Pending JP2005089823A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003325004A JP2005089823A (ja) 2003-09-17 2003-09-17 成膜装置および成膜方法
CNB2004800105722A CN100494487C (zh) 2003-09-17 2004-09-14 成膜装置及成膜方法
KR1020067005339A KR100878910B1 (ko) 2003-09-17 2004-09-14 성막 장치 및 성막 방법
EP04773039.5A EP1672093B1 (en) 2003-09-17 2004-09-14 Film-forming apparatus and film-forming method
PCT/JP2004/013357 WO2005028703A1 (ja) 2003-09-17 2004-09-14 成膜装置および成膜方法
US11/377,291 US20060213444A1 (en) 2003-09-17 2006-03-17 Deposition apparatus and deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003325004A JP2005089823A (ja) 2003-09-17 2003-09-17 成膜装置および成膜方法

Publications (2)

Publication Number Publication Date
JP2005089823A true JP2005089823A (ja) 2005-04-07
JP2005089823A5 JP2005089823A5 (enExample) 2006-07-20

Family

ID=34372767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003325004A Pending JP2005089823A (ja) 2003-09-17 2003-09-17 成膜装置および成膜方法

Country Status (6)

Country Link
US (1) US20060213444A1 (enExample)
EP (1) EP1672093B1 (enExample)
JP (1) JP2005089823A (enExample)
KR (1) KR100878910B1 (enExample)
CN (1) CN100494487C (enExample)
WO (1) WO2005028703A1 (enExample)

Cited By (10)

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Publication number Priority date Publication date Assignee Title
KR100676396B1 (ko) 2005-06-09 2007-02-01 주식회사 케이씨텍 중성화빔을 이용한 표면처리장치
JP2008095131A (ja) * 2006-10-06 2008-04-24 Ngk Insulators Ltd 表面改質装置
JP2011238900A (ja) * 2010-04-16 2011-11-24 Canon Anelva Corp 磁気抵抗効果素子の製造方法
JP2013177284A (ja) * 2011-09-16 2013-09-09 Toyota Motor Corp プラズマｃｖｄ装置及び基板加熱保持台並びにカーボンナノチューブの製造方法
WO2014030414A1 (ja) * 2012-08-23 2014-02-27 東京エレクトロン株式会社 成膜装置、低誘電率膜を形成する方法、ＳｉＣＯ膜、及びダマシン配線構造
JP2014167142A (ja) * 2013-02-28 2014-09-11 Tokyo Electron Ltd カーボン膜形成方法及びカーボン膜
WO2015108065A1 (ja) * 2014-01-15 2015-07-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
KR20150085793A (ko) 2014-01-16 2015-07-24 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR20170032195A (ko) * 2015-09-14 2017-03-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2020009745A (ja) * 2018-04-20 2020-01-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔モジュール型高周波源

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CN101322225B (zh) * 2006-03-06 2012-06-27 东京毅力科创株式会社 等离子体处理装置
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US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
JP2008198739A (ja) 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
CN101403108B (zh) * 2008-08-04 2012-05-02 李刚 化学气相淀积反应器和化学气相淀积方法
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JP5660804B2 (ja) 2010-04-30 2015-01-28 東京エレクトロン株式会社 カーボンナノチューブの形成方法及びカーボンナノチューブ成膜装置
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TW201325326A (zh) * 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
JP5803706B2 (ja) * 2012-02-02 2015-11-04 東京エレクトロン株式会社 成膜装置
JP5803714B2 (ja) * 2012-02-09 2015-11-04 東京エレクトロン株式会社 成膜装置
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JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
CN103774120B (zh) * 2013-12-31 2016-06-22 刘键 一种用于pecvd系统的匀气装置
KR20150116600A (ko) * 2014-04-08 2015-10-16 삼성전자주식회사 에피텍시얼막 형성 방법 및 이를 수행하는데 사용되는 기판 처리 장치
KR20160002543A (ko) * 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
KR20160021958A (ko) * 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
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KR100676396B1 (ko) 2005-06-09 2007-02-01 주식회사 케이씨텍 중성화빔을 이용한 표면처리장치
JP2008095131A (ja) * 2006-10-06 2008-04-24 Ngk Insulators Ltd 表面改質装置
JP2011238900A (ja) * 2010-04-16 2011-11-24 Canon Anelva Corp 磁気抵抗効果素子の製造方法
JP2013177284A (ja) * 2011-09-16 2013-09-09 Toyota Motor Corp プラズマｃｖｄ装置及び基板加熱保持台並びにカーボンナノチューブの製造方法
KR102030223B1 (ko) * 2012-08-23 2019-10-08 도쿄엘렉트론가부시키가이샤 성막 장치, 저유전율막을 형성하는 방법, SiCO막 및 다마신 배선 구조
WO2014030414A1 (ja) * 2012-08-23 2014-02-27 東京エレクトロン株式会社 成膜装置、低誘電率膜を形成する方法、ＳｉＣＯ膜、及びダマシン配線構造
JP2014116576A (ja) * 2012-08-23 2014-06-26 Tokyo Electron Ltd 成膜装置、低誘電率膜を形成する方法、ＳｉＣＯ膜、及びダマシン配線構造
KR20150046028A (ko) * 2012-08-23 2015-04-29 도쿄엘렉트론가부시키가이샤 성막 장치, 저유전율막을 형성하는 방법, SiCO막 및 다마신 배선 구조
JP2014167142A (ja) * 2013-02-28 2014-09-11 Tokyo Electron Ltd カーボン膜形成方法及びカーボン膜
WO2015108065A1 (ja) * 2014-01-15 2015-07-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
JPWO2015108065A1 (ja) * 2014-01-15 2017-03-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
JP2015134943A (ja) * 2014-01-16 2015-07-27 東京エレクトロン株式会社 基板処理装置
KR20150085793A (ko) 2014-01-16 2015-07-24 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR20170032195A (ko) * 2015-09-14 2017-03-22 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR102616555B1 (ko) 2015-09-14 2023-12-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2020009745A (ja) * 2018-04-20 2020-01-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔モジュール型高周波源
JP7510746B2 (ja) 2018-04-20 2024-07-04 アプライド マテリアルズ インコーポレイテッド 遠隔モジュール型高周波源

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KR100878910B1 (ko) 2009-01-15
US20060213444A1 (en) 2006-09-28
WO2005028703A1 (ja) 2005-03-31
EP1672093B1 (en) 2013-07-10
CN1777695A (zh) 2006-05-24
CN100494487C (zh) 2009-06-03

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