JP2022525438A - 処理チャンバ内でのプラズマの高密度化 - Google Patents
処理チャンバ内でのプラズマの高密度化 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 94
- 230000004888 barrier function Effects 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 204
- 239000012528 membrane Substances 0.000 claims description 14
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 92
- 239000010408 film Substances 0.000 description 29
- 239000006185 dispersion Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
[0001]本開示の実施形態は概して、半導体基板上での薄膜の堆積に関する。
[0002]半導体デバイス製造では、基板上に一又は複数の膜を形成するために、プラズマ化学気相堆積(PECVD)が使用されうる。多くの場合、PECVDを実施している間に、処理チャンバ内でプラズマが生成されて基板上に一又は複数の膜が形成される。更に、膜の一又は複数のパラメータの均一性はプラズマの密度の均一性に対応する。したがって、プラズマ密度に差異があればそれが、一又は複数の膜の一又は複数のパラメータにおけるばらつきを引き起こしうる。一例では、不均一なプラズマ密度によって両エッジ間の厚さが不均一な膜が生成されることがあり、これにより、処理済みの基板が、半導体デバイス製造における使用に不適格となる可能性がある。したがって、製造歩留まりが低下し、製造コストは増大しうる。
Claims (15)
- 膜を形成するための方法であって、
基板上に前記膜を形成するために、処理チャンバの処理空間内にプラズマを生成することと、
前記処理空間内にプラズマを生成することと重複している期間中に、前記処理チャンバの第1の側から、流入口を介して、前記処理チャンバの前記処理空間へとバリアガスを導入して、前記基板の一又は複数のエッジに沿ってガスカーテンを生成することと、
前記処理チャンバの排気口を介して、前記プラズマ及び前記バリアガスをパージすることと、を含む、方法。 - 前記プラズマを生成することが、前記処理チャンバのガス分配装置を通って流れる処理ガスをイオン化することを含む、請求項1に記載の方法。
- 前記基板が、前記処理チャンバの基板支持体上に配置され、かつ、前記ガス分配装置と前記第1の側との間に配置される、請求項2に記載の方法。
- 前記バリアガスの流量が、前記処理ガスの流量、前記バリアガスの種類、及び前記処理ガスの種類、のうちの少なくとも1つに基づく、請求項2に記載の方法。
- 前記バリアガスが、ヘリウム、水素、窒素、アルゴン、酸素、又は窒素酸化物、のうちの1つである、請求項1に記載の方法。
- 前記バリアガスが不活性ガスである、請求項1に記載の方法。
- 前記基板の前記一又は複数のエッジに沿って前記ガスカーテンを生成することが、前記基板の上方の前記プラズマの密度の均一性を向上させる、請求項1に記載の方法。
- 前記基板の上方の前記プラズマの前記密度の均一性を向上させることが、前記基板上に形成される前記膜の厚さの均一性を向上させる、請求項7に記載の方法。
- 処理チャンバであって、
処理ガスをイオン化することによって処理空間内でプラズマを生成するよう構成された、ガス分配装置と、
前記処理空間内で基板を支持するよう構成された基板支持体と、
前記処理チャンバの第1の壁に沿って配置されたガス流入口と、
前記ガス流入口に連結されたガス供給源であって、前記処理空間内で前記プラズマを生成することと重複している期間中に、前記処理空間へとバリアガスを導入して、前記基板の一又は複数のエッジに沿ってガスカーテンを生成するよう構成された、ガス供給源と、を備える、処理チャンバ。 - 前記処理チャンバの前記第1の壁が、前記ガス分配装置の反対側にある、請求項9に記載の処理チャンバ。
- 前記ガス供給源が、前記処理ガスの流量、前記バリアガスの種類、及び前記処理ガスの種類、のうちの少なくとも1つに基づく流量で、前記バリアガスを供給するよう構成される、請求項9に記載の処理チャンバ。
- 前記バリアガスが、ヘリウム、水素、窒素、アルゴン、酸素、又は窒素酸化物、のうちの1つである、請求項9に記載の処理チャンバ。
- 前記基板の前記一又は複数のエッジに沿って前記ガスカーテンを生成することが、前記基板の上方の前記プラズマの密度の均一性を向上させる、請求項9に記載の処理チャンバ。
- 前記処理空間内に配置され、かつ前記基板支持体を取り囲んでいるシールドであって、前記バリアガスの流れを制御するよう構成されている、シールドと、
前記処理チャンバの前記第1の壁に沿って配置された排気口と、を更に備える、請求項9に記載の処理チャンバ。 - 処理チャンバであって、
プラズマを生成するために処理空間内に処理ガスを提供するよう構成された、ガス分配装置と、
前記処理空間内で基板を支持するよう構成された基板支持体と、
前記処理チャンバの第1の壁に沿って配置されたガス流入口と、
前記処理空間内で前記プラズマを生成することと重複している期間中に、前記処理チャンバの前記処理空間へとバリアガスを導入して、前記基板の一又は複数のエッジに沿ってガスカーテンを生成するよう構成された、ガス供給源と、
前記処理空間内に配置され、かつ前記基板支持体を取り囲んでいるシールドであって、前記バリアガスの流れを制御して前記ガスカーテンを形成するよう構成されている、シールドと、
前記処理チャンバの前記第1の壁に沿って配置された排気口と、を備える、処理チャンバ。
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