JP2021520630A - H2プラズマを用いた流動性膜の硬化 - Google Patents
H2プラズマを用いた流動性膜の硬化 Download PDFInfo
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- 239000012530 fluid Substances 0.000 title abstract description 22
- 239000012528 membrane Substances 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 98
- 239000007789 gas Substances 0.000 claims abstract description 88
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000010926 purge Methods 0.000 claims description 19
- 238000009832 plasma treatment Methods 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000012686 silicon precursor Substances 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- GCOJIFYUTTYXOF-UHFFFAOYSA-N hexasilinane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2][SiH2]1 GCOJIFYUTTYXOF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 238000001723 curing Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003848 UV Light-Curing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910008045 Si-Si Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006411 Si—Si Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000003701 inert diluent Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (15)
- 基板を処理する方法であって、
アモルファスシリコン層をプラズマ処理することであって、
処理チャンバの、内部に基板支持体上に配置された基板を有する処理容積の中に、実質的にシリコンを含まない水素処理ガスを流入させること、
前記実質的にシリコンを含まない水素処理ガスの処理プラズマを生成すること、並びに
FCVDプロセスを用いて前記アモルファスシリコン層が表面上に堆積させられた基板を、前記処理プラズマに曝露することを含み、前記FCVDプロセスが、
前記基板を前記基板支持体上に配置すること、
プロセスガスを前記処理容積の中に流入させること、
前記プロセスガスの堆積プラズマを生成すること、
前記基板の前記表面を前記堆積プラズマに曝露すること、及び
前記アモルファスシリコン層を前記基板の前記表面上に堆積させることを含む、アモルファスシリコン層をプラズマ処理することを含む、方法。 - 前記処理プラズマが、基板表面積の約0.10W/cm2と約1W/cm2との間のRF電力で、前記実質的にシリコンを含まない処理ガスを電極と容量結合させることによって生成される、請求項1に記載の方法。
- 前記アモルファスシリコン層をプラズマ処理することが、前記処理容積を約1mTorrと約2Torrとの間の圧力に維持することを含む、請求項1に記載の方法。
- 前記水素処理ガスが、実質的にシリコンを含まず、かつ実質的に酸素を含まない、請求項1に記載の方法。
- 前記基板を処理することが、前記基板を摂氏約−100度と摂氏約100度との間の温度に維持することを更に含む、請求項1に記載の方法。
- 前記実質的にシリコンを含まない水素処理ガスが、H2及び不活性ガスを含む、請求項1に記載の方法。
- 前記アモルファスシリコン層をプラズマ処理することが、約10秒を超える時間、前記基板を前記処理プラズマに曝露することを含む、請求項1に記載の方法。
- 前記プロセスガスが、シラン(SiH4)、ジシラン(Si2H6)、トリシラン(Si3H8)、及びテトラシラン(Si4H10)、ネオペンタシラン(NPS)、並びにシクロヘキサシランから成る群から選択された、1以上のシリコン前駆体を含む、請求項1に記載の方法。
- H2の不活性ガスに対する比が、約1:10と約5:1との間である、請求項6に記載の方法。
- 前記不活性ガスがArである、請求項6に記載の方法。
- 前記プロセスガスが、実質的に窒素を含まないか、実質的に酸素を含まないかの一方又は両方である、請求項8に記載の方法。
- 基板を処理する方法であって、
前記基板を摂氏約−100度と摂氏約100度との間の温度に維持すること、
アモルファスシリコン層を堆積させることであって、
前記基板を処理容積内に配置された基板支持体上に配置すること、
実質的に酸素を含まず、かつ実質的に窒素を含まないプロセスガスを、前記処理容積の中に流入させること、
約300W未満のRF又は他の交流周波数電力で、前記プロセスガスを電極と容量結合させることによって、前記プロセスガスの堆積プラズマを生成すること、
前記基板の表面を前記堆積プラズマに曝露すること、及び
前記基板の表面上に前記アモルファスシリコン層を堆積させることを含む、アモルファスシリコン層を堆積させること、並びに
前記アモルファスシリコン層をプラズマ処理することであって、
約1:10と約5:1との間の比のH2と不活性ガスとを含み、実質的にシリコンを含まず、かつ実質的に酸素を含まない処理ガスを、前記処理容積の中に流入させること、
約100Wと約500Wとの間のRF電力で、前記処理ガスを電極と容量結合させることによって、前記処理ガスの処理プラズマを生成すること、及び
前記アモルファスシリコン層を約10秒を超える持続時間にわたって前記処理プラズマに曝露することを含む、前記アモルファスシリコン層をプラズマ処理することを含む、方法。 - 前記アモルファスシリコン層をプラズマ処理することの前に、前記処理容積をパージすることであって、
前記プロセスガスの流れを停止すること、
前記堆積プラズマを消失させること、
パージガスを前記処理容積の中に流入させること、及び
前記アモルファスシリコン層をプラズマ処理することの前に、前記パージガスを前記処理容積から排気することを含む、前記処理容積をパージすることを更に含む、請求項12に記載の方法。 - 前記アモルファスシリコン層を堆積させること、及び前記アモルファスシリコン層をプラズマ処理することの、複数の連続したサイクルを更に含む、請求項12に記載の方法。
- 基板を処理する方法であって、
前記基板を摂氏約−100度と摂氏約100度との間の温度に維持すること、
アモルファスシリコン層を堆積させることであって、
基板を処理容積内に配置された基板支持体上に配置すること、
実質的に酸素を含まず、かつ実質的に窒素を含まないプロセスガスを、前記処理容積の中に流入させること、
約300W未満のRF又は他の交流周波数電力で、前記プロセスガスを電極と容量結合させることによって、前記プロセスガスの堆積プラズマを生成すること、
前記基板の表面を前記堆積プラズマに曝露すること、及び
前記基板の表面上に前記アモルファスシリコン層を堆積させることを含む、アモルファスシリコン層を堆積させること、
前記処理容積をパージすることであって、
前記プロセスガスの流れを停止すること、
前記堆積プラズマを消失させること、
パージガスを前記処理容積の中に流入させること、及び
前記アモルファスシリコン層をプラズマ処理することの前に、前記パージガスを前記処理容積から排気することを含む、前記処理容積をパージすること、並びに
前記アモルファスシリコン層をプラズマ処理することであって、
約1:10と約5:1との間の比のH2と不活性ガスとを含み、実質的にシリコンを含まず、かつ実質的に酸素を含まないプロセスガスを、前記処理容積の中に流入させること、
約100Wと約500Wとの間のRF又は他の交流周波数電力で、電極と容量結合させることによって、前記処理ガスの処理プラズマを生成すること、及び
前記アモルファスシリコン層を約10秒を超える持続時間にわたって前記処理プラズマに曝露することを含む、前記アモルファスシリコン層をプラズマ処理することを含む、方法。
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US11562902B2 (en) * | 2020-07-19 | 2023-01-24 | Applied Materials, Inc. | Hydrogen management in plasma deposited films |
US11887811B2 (en) | 2020-09-08 | 2024-01-30 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
US20220076922A1 (en) * | 2020-09-08 | 2022-03-10 | Applied Materials, Inc. | Single chamber flowable film formation and treatments |
US11699571B2 (en) | 2020-09-08 | 2023-07-11 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
US20220157602A1 (en) * | 2020-11-18 | 2022-05-19 | Applied Materials, Inc. | Silicon oxide gap fill using capacitively coupled plasmas |
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