CN100494487C - 成膜装置及成膜方法 - Google Patents

成膜装置及成膜方法 Download PDF

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Publication number
CN100494487C
CN100494487C CNB2004800105722A CN200480010572A CN100494487C CN 100494487 C CN100494487 C CN 100494487C CN B2004800105722 A CNB2004800105722 A CN B2004800105722A CN 200480010572 A CN200480010572 A CN 200480010572A CN 100494487 C CN100494487 C CN 100494487C
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film
radical
film forming
substrate
gas
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Expired - Fee Related
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CNB2004800105722A
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English (en)
Chinese (zh)
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CN1777695A (zh
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寒川诚二
野泽俊久
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2004800105722A 2003-09-17 2004-09-14 成膜装置及成膜方法 Expired - Fee Related CN100494487C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003325004A JP2005089823A (ja) 2003-09-17 2003-09-17 成膜装置および成膜方法
JP325004/2003 2003-09-17

Publications (2)

Publication Number Publication Date
CN1777695A CN1777695A (zh) 2006-05-24
CN100494487C true CN100494487C (zh) 2009-06-03

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Country Status (6)

Country Link
US (1) US20060213444A1 (enExample)
EP (1) EP1672093B1 (enExample)
JP (1) JP2005089823A (enExample)
KR (1) KR100878910B1 (enExample)
CN (1) CN100494487C (enExample)
WO (1) WO2005028703A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103243314A (zh) * 2012-02-09 2013-08-14 东京毅力科创株式会社 成膜装置
CN103243309A (zh) * 2012-02-02 2013-08-14 东京毅力科创株式会社 成膜装置及成膜方法

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KR100676396B1 (ko) 2005-06-09 2007-02-01 주식회사 케이씨텍 중성화빔을 이용한 표면처리장치
CN101322225B (zh) * 2006-03-06 2012-06-27 东京毅力科创株式会社 等离子体处理装置
US20100024732A1 (en) * 2006-06-02 2010-02-04 Nima Mokhlesi Systems for Flash Heating in Atomic Layer Deposition
US20070277735A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070281105A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
JP4963923B2 (ja) * 2006-10-06 2012-06-27 日本碍子株式会社 表面改質装置
JP2008198739A (ja) 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
CN101403108B (zh) * 2008-08-04 2012-05-02 李刚 化学气相淀积反应器和化学气相淀积方法
WO2010094002A2 (en) * 2009-02-13 2010-08-19 Applied Materials, Inc. Rf bus and rf return bus for plasma chamber electrode
WO2011034057A1 (ja) * 2009-09-17 2011-03-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置用ガス供給機構
JP5707174B2 (ja) * 2010-04-16 2015-04-22 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP5660804B2 (ja) 2010-04-30 2015-01-28 東京エレクトロン株式会社 カーボンナノチューブの形成方法及びカーボンナノチューブ成膜装置
DE102011009347B4 (de) * 2010-11-29 2016-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines kohlenstoffhaltigen Schichtsystems sowie Vorrichtung zur Durchführung des Verfahrens
TW201239130A (en) * 2011-03-16 2012-10-01 I-Nan Lin Microwave plasma system
JP5984536B2 (ja) * 2011-09-16 2016-09-06 国立大学法人名古屋大学 プラズマｃｖｄ装置及びカーボンナノチューブの製造方法
TW201325326A (zh) * 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
US20130284093A1 (en) * 2012-04-30 2013-10-31 Semes Co., Ltd. Substrate treating apparatus
JP6172660B2 (ja) * 2012-08-23 2017-08-02 東京エレクトロン株式会社 成膜装置、及び、低誘電率膜を形成する方法
JP2014167142A (ja) * 2013-02-28 2014-09-11 Tokyo Electron Ltd カーボン膜形成方法及びカーボン膜
JP2015018686A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP2015018687A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
CN103774120B (zh) * 2013-12-31 2016-06-22 刘键 一种用于pecvd系统的匀气装置
WO2015108065A1 (ja) * 2014-01-15 2015-07-23 東京エレクトロン株式会社 成膜方法及び熱処理装置
JP5908001B2 (ja) * 2014-01-16 2016-04-26 東京エレクトロン株式会社 基板処理装置
KR20150116600A (ko) * 2014-04-08 2015-10-16 삼성전자주식회사 에피텍시얼막 형성 방법 및 이를 수행하는데 사용되는 기판 처리 장치
KR20160002543A (ko) * 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
KR20160021958A (ko) * 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
JP2017059579A (ja) * 2015-09-14 2017-03-23 東京エレクトロン株式会社 プラズマ処理装置
US11393661B2 (en) * 2018-04-20 2022-07-19 Applied Materials, Inc. Remote modular high-frequency source
JP7278123B2 (ja) * 2019-03-22 2023-05-19 東京エレクトロン株式会社 処理方法

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Publication number Priority date Publication date Assignee Title
CN103243309A (zh) * 2012-02-02 2013-08-14 东京毅力科创株式会社 成膜装置及成膜方法
CN103243314A (zh) * 2012-02-09 2013-08-14 东京毅力科创株式会社 成膜装置
CN103243314B (zh) * 2012-02-09 2015-12-09 东京毅力科创株式会社 成膜装置

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Publication number Publication date
KR20060085334A (ko) 2006-07-26
EP1672093A1 (en) 2006-06-21
EP1672093A4 (en) 2007-04-18
KR100878910B1 (ko) 2009-01-15
US20060213444A1 (en) 2006-09-28
WO2005028703A1 (ja) 2005-03-31
JP2005089823A (ja) 2005-04-07
EP1672093B1 (en) 2013-07-10
CN1777695A (zh) 2006-05-24

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