JP2005089660A - 半導体封止用樹脂組成物 - Google Patents
半導体封止用樹脂組成物 Download PDFInfo
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- JP2005089660A JP2005089660A JP2003326907A JP2003326907A JP2005089660A JP 2005089660 A JP2005089660 A JP 2005089660A JP 2003326907 A JP2003326907 A JP 2003326907A JP 2003326907 A JP2003326907 A JP 2003326907A JP 2005089660 A JP2005089660 A JP 2005089660A
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Abstract
【解決手段】(1)(A)1分子中に2個以上のエポキシ基を有するエポキシ樹脂、
(B)硬化剤、ならびに
(C)周期律表第III族および珪素を除く第IV族の金属原子の酸化物よりなる群から選ばれた少なくとも一種の金属酸化物と二酸化珪素から構成される複合無機酸化物粒子、
を含有してなる半導体封止用樹脂組成物、
(2)前記金属酸化物が酸化チタンである前記(1)記載の半導体封止用樹脂組成物、ならびに
(3)前記(1)または(2)記載の半導体封止用樹脂組成物により封止されてなる半導体装置。
【選択図】なし
Description
(1)(A)1分子中に2個以上のエポキシ基を有するエポキシ樹脂、
(B)硬化剤、ならびに
(C)周期律表第III族および珪素を除く第IV族の金属原子の酸化物よりなる群から選ばれた少なくとも一種の金属酸化物と二酸化珪素から構成される複合無機酸化物粒子、
を含有してなる半導体封止用樹脂組成物、
(2)前記金属酸化物が酸化チタンである前記(1)記載の半導体封止用樹脂組成物、ならびに
(3)前記(1)または(2)記載の半導体封止用樹脂組成物により封止されてなる半導体装置
に関する。
(A)1分子中に2個以上のエポキシ基を有するエポキシ樹脂、
(B)硬化剤、ならびに
(C)周期律表第III族および珪素を除く第IV族の金属原子の酸化物よりなる群から選ばれた少なくとも一種の金属酸化物と二酸化珪素から構成される複合無機酸化物粒子、
を含有することに1つの大きな特徴を有する。
ポリエステルフィルム)の上に塗布する。つぎに、該シートを80〜160℃程度での乾燥工程に供し、有機溶剤を除去することにより、剥離シート上にシート状の樹脂組成物を製造する。また、エポキシ樹脂、硬化剤および複合無機酸化物粒子、ならびに所望によりその他の成分を所定量配合し、トルエン、メチルエチルケトン、酢酸エチルなどの有機溶剤に混合溶解し、この混合溶液を離型処理(例えば、シリコーン処理)したポリエステルフィルムなどの基材フィルム上に塗布する。つぎに、該基材フィルムを80〜160℃程度での乾燥工程に供し、該基材フィルム上にシート状の樹脂組成物を製造した後に、ロールラミネーターを用いて所定の剥離シートと貼り合わせ、かかるシートから基材フィルムのみを除去することにより剥離シートの上にシート状の樹脂組成物を製造しても良い。
樹脂組成物の透過性を、分光光度計(島津製作所社製:UV3101)を用いて、波長650nmで測定した。なお、透過率が30%以上の場合は、パターン認識可能であると評価した。
80×50×20mmの成形物を作製し、樹脂組成物の熱伝導率を京都電子工業社製のQTM−D3を用いて測定した。
半導体装置を−55℃で10分間維持後、125℃で10分間維持する操作を行った。この操作を500回(TST500)または1000回(TST1000)行った後に、デイジーチェーン(ADVANTEST社製:デジタルマルチメーターTR6847)にて半導体装置の電気抵抗値を測定し、その電気抵抗値を初期値(前記操作を行う前の半導体装置の電気抵抗値)と比較した。この電気抵抗値が初期値の2倍以上となった半導体を不良品としてカウントした。
以下のようにして実施例1〜4ならびに比較例1および2の樹脂組成物を製造した。
2 剥離シート
3 ウエハ
4 バンプ
5 ダイシングテープ
6 個別チップ
7 配線回路基板
Claims (3)
- (A)1分子中に2個以上のエポキシ基を有するエポキシ樹脂、
(B)硬化剤、ならびに
(C)周期律表第III族および珪素を除く第IV族の金属原子の酸化物よりなる群から選ばれた少なくとも一種の金属酸化物と二酸化珪素から構成される複合無機酸化物粒子、
を含有してなる半導体封止用樹脂組成物。 - 前記金属酸化物が酸化チタンである請求項1記載の半導体封止用樹脂組成物。
- 請求項1または2記載の半導体封止用樹脂組成物により封止されてなる半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003326907A JP2005089660A (ja) | 2003-09-18 | 2003-09-18 | 半導体封止用樹脂組成物 |
TW093127910A TW200517435A (en) | 2003-09-18 | 2004-09-15 | Resin composition for encapsulating semiconductor device |
KR1020040074203A KR20050028807A (ko) | 2003-09-18 | 2004-09-16 | 반도체 밀봉용 수지 조성물 |
US10/941,883 US7312104B2 (en) | 2003-09-18 | 2004-09-16 | Resin composition for encapsulating semiconductor device |
EP20040022039 EP1517367A3 (en) | 2003-09-18 | 2004-09-16 | Resin composition for encapsulating semiconductor device |
CNA2004100851005A CN1616579A (zh) | 2003-09-18 | 2004-09-17 | 半导体密封用树脂组成物 |
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JP2003326907A JP2005089660A (ja) | 2003-09-18 | 2003-09-18 | 半導体封止用樹脂組成物 |
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Family
ID=34191360
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JP2003326907A Pending JP2005089660A (ja) | 2003-09-18 | 2003-09-18 | 半導体封止用樹脂組成物 |
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Country | Link |
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US (1) | US7312104B2 (ja) |
EP (1) | EP1517367A3 (ja) |
JP (1) | JP2005089660A (ja) |
KR (1) | KR20050028807A (ja) |
CN (1) | CN1616579A (ja) |
TW (1) | TW200517435A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009260224A (ja) * | 2008-03-21 | 2009-11-05 | Hitachi Chem Co Ltd | 半導体ウエハのダイシング方法及び半導体装置の製造方法 |
KR101214078B1 (ko) * | 2010-06-10 | 2012-12-20 | 주식회사 케이씨씨 | 전기적 특성이 우수한 반도체 봉지용 에폭시 수지 조성물 |
JP2013021119A (ja) * | 2011-07-11 | 2013-01-31 | Shin Etsu Chem Co Ltd | ウエハーレベルアンダーフィル剤組成物、これを用いた半導体装置及びその製造方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5124808B2 (ja) * | 2005-08-05 | 2013-01-23 | 信越化学工業株式会社 | エポキシ樹脂組成物及び半導体装置 |
US7875503B2 (en) * | 2006-12-28 | 2011-01-25 | Intel Corporation | Reducing underfill keep out zone on substrate used in electronic device processing |
JP5487619B2 (ja) * | 2007-01-10 | 2014-05-07 | 日立化成株式会社 | 回路部材接続用接着剤及びこれを用いた半導体装置 |
US7687890B2 (en) * | 2007-03-29 | 2010-03-30 | Intel Corporation | Controlling substrate surface properties via colloidal coatings |
JP4510066B2 (ja) * | 2007-11-06 | 2010-07-21 | 日東電工株式会社 | 配線回路基板の製造方法および検査方法 |
KR100946589B1 (ko) * | 2008-04-03 | 2010-03-09 | 엘지이노텍 주식회사 | 반도체 소자 제조용 접착 페이스트 조성물 |
JP5422921B2 (ja) * | 2008-05-28 | 2014-02-19 | デクセリアルズ株式会社 | 接着フィルム |
US7759780B2 (en) * | 2008-09-30 | 2010-07-20 | Intel Corporation | Microelectronic package with wear resistant coating |
JP2010129700A (ja) * | 2008-11-26 | 2010-06-10 | Nitto Denko Corp | ダイシング・ダイボンドフィルム及び半導体装置の製造方法 |
JP4810565B2 (ja) * | 2008-11-26 | 2011-11-09 | 日東電工株式会社 | ダイシング・ダイボンドフィルム及び半導体装置の製造方法 |
JP5827864B2 (ja) * | 2011-06-14 | 2015-12-02 | 日東電工株式会社 | 封止用シートおよび光半導体素子装置 |
US8994174B2 (en) * | 2011-09-30 | 2015-03-31 | Intel Corporation | Structure having a planar bonding surface |
US8872358B2 (en) * | 2012-02-07 | 2014-10-28 | Shin-Etsu Chemical Co., Ltd. | Sealant laminated composite, sealed semiconductor devices mounting substrate, sealed semiconductor devices forming wafer, semiconductor apparatus, and method for manufacturing semiconductor apparatus |
CN104151776B (zh) * | 2014-08-08 | 2017-05-10 | 吴晓龙 | 可见光传感器 |
DE102018118251B4 (de) * | 2018-07-27 | 2020-02-06 | Infineon Technologies Ag | Chipanordnung und Verfahren zur Herstellung derselben |
CN111653532B (zh) * | 2020-06-15 | 2021-12-21 | 深圳市数聚天源人工智能有限公司 | 一种高热流密度芯片散热装置及其制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0441622B1 (en) * | 1990-02-07 | 1994-11-02 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin compositions containing highly transparent silica-titania glass beads |
JP3230765B2 (ja) | 1992-08-17 | 2001-11-19 | 株式会社トクヤマ | エポキシ樹脂組成物 |
JP3153171B2 (ja) | 1998-06-09 | 2001-04-03 | 日東電工株式会社 | 光半導体装置および光半導体封止用エポキシ樹脂組成物 |
JP2001144120A (ja) | 1999-11-10 | 2001-05-25 | Sumitomo Bakelite Co Ltd | 半導体装置およびその製造方法 |
JP3685252B2 (ja) * | 2000-09-12 | 2005-08-17 | 信越化学工業株式会社 | 光透過性エポキシ樹脂組成物及びフリップチップ型半導体装置 |
JP3835518B2 (ja) * | 2000-09-13 | 2006-10-18 | 信越化学工業株式会社 | 光透過性エポキシ樹脂組成物及び半導体装置 |
JP2002118147A (ja) * | 2000-10-11 | 2002-04-19 | Mitsui Chemicals Inc | 半導体チップをプリント配線基板に装着する方法及びその方法の実施に用いる装着用シート |
JP2003138100A (ja) | 2001-11-05 | 2003-05-14 | Nippon Steel Chem Co Ltd | フリップチップ実装用エポキシ樹脂組成物及び半導体装置 |
US7109591B2 (en) * | 2004-06-04 | 2006-09-19 | Hack Jonathan A | Integrated circuit device |
-
2003
- 2003-09-18 JP JP2003326907A patent/JP2005089660A/ja active Pending
-
2004
- 2004-09-15 TW TW093127910A patent/TW200517435A/zh unknown
- 2004-09-16 EP EP20040022039 patent/EP1517367A3/en not_active Withdrawn
- 2004-09-16 US US10/941,883 patent/US7312104B2/en not_active Expired - Fee Related
- 2004-09-16 KR KR1020040074203A patent/KR20050028807A/ko not_active Application Discontinuation
- 2004-09-17 CN CNA2004100851005A patent/CN1616579A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009260224A (ja) * | 2008-03-21 | 2009-11-05 | Hitachi Chem Co Ltd | 半導体ウエハのダイシング方法及び半導体装置の製造方法 |
KR101214078B1 (ko) * | 2010-06-10 | 2012-12-20 | 주식회사 케이씨씨 | 전기적 특성이 우수한 반도체 봉지용 에폭시 수지 조성물 |
JP2013021119A (ja) * | 2011-07-11 | 2013-01-31 | Shin Etsu Chem Co Ltd | ウエハーレベルアンダーフィル剤組成物、これを用いた半導体装置及びその製造方法 |
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US20050064201A1 (en) | 2005-03-24 |
CN1616579A (zh) | 2005-05-18 |
TW200517435A (en) | 2005-06-01 |
US7312104B2 (en) | 2007-12-25 |
EP1517367A2 (en) | 2005-03-23 |
EP1517367A3 (en) | 2006-05-17 |
KR20050028807A (ko) | 2005-03-23 |
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