JP2005072291A - 熱処理装置および熱処理装置の洗浄方法 - Google Patents
熱処理装置および熱処理装置の洗浄方法 Download PDFInfo
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- JP2005072291A JP2005072291A JP2003300683A JP2003300683A JP2005072291A JP 2005072291 A JP2005072291 A JP 2005072291A JP 2003300683 A JP2003300683 A JP 2003300683A JP 2003300683 A JP2003300683 A JP 2003300683A JP 2005072291 A JP2005072291 A JP 2005072291A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 115
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000005406 washing Methods 0.000 title abstract 2
- 239000002245 particle Substances 0.000 claims abstract description 59
- 239000007789 gas Substances 0.000 claims abstract description 21
- 238000004140 cleaning Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 26
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 85
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 17
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 17
- 238000012423 maintenance Methods 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 87
- 230000008569 process Effects 0.000 description 25
- 150000002500 ions Chemical class 0.000 description 24
- 229910052724 xenon Inorganic materials 0.000 description 9
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 9
- 238000001994 activation Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0037—Supports specially adapted for semi-conductors
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Furnace Details (AREA)
Abstract
【解決手段】装置のメンテナンスが終了した後、半導体ウェハーWの熱処理を行う前にサセプタ73および加熱プレート74を上昇させるとともに、導入路78から排出路84に向けて窒素ガスの気流を形成する。この状態で、フラッシュランプ69を点灯させることによりチャンバー65内の気体を瞬間的に膨張、収縮させて底板62等に堆積したパーティクルを飛散させる。飛散したパーティクルはチャンバー65の底部を通過して排出路84から排出される窒素ガス気流によって除去される。このような窒素ガスの気流を形成しつつ、一定時間間隔にてフラッシュランプ69を所定回数点灯するだけで、チャンバー65内のパーティクルを容易に除去することができる。
【選択図】図2
Description
10 コントローラ
11 CPU
61 透光板
62 底板
65 チャンバー
69 フラッシュランプ
71 リフレクタ
73 サセプタ
74 加熱プレート
78 導入路
79,84 排出路
80,81,85 開閉弁
W 半導体ウェハー
Claims (8)
- 処理室内に収容された基板に対して閃光を照射することによって該基板を加熱する熱処理装置であって、
前記処理室内に閃光を照射して前記処理室内の処理空間にパーティクルを飛散させるフラッシュランプと、
前記処理空間の排気を行う排気手段と、
を備えることを特徴とする熱処理装置。 - 請求項1記載の熱処理装置において、
前記排気手段は、前記処理室の底部から前記処理空間の排気を行うことを特徴とする熱処理装置。 - 請求項2記載の熱処理装置において、
前記処理室の底部に不活性ガスを供給するガス供給手段をさらに備えることを特徴とする熱処理装置。 - 請求項1から請求項3のいずれかに記載の熱処理装置において、
処理対象となる基板の搬入を禁止した状態にて前記処理室内に閃光を照射するように前記フラッシュランプを制御する制御手段をさらに備えることを特徴とする熱処理装置。 - 処理室内に収容された基板に対して閃光を照射することによって該基板を加熱する熱処理装置の洗浄方法であって、
前記処理室内にフラッシュランプから閃光を照射して前記処理室内の処理空間にパーティクルを飛散させる工程と、
パーティクルが飛散した前記処理空間の排気を行う工程と、
を備えることを特徴とする熱処理装置の洗浄方法。 - 請求項5記載の洗浄方法において、
前記処理室の底部から前記処理空間の排気を行うことを特徴とする熱処理装置の洗浄方法。 - 請求項6記載の洗浄方法において、
前記処理室の底部に不活性ガスを供給する工程をさらに備えることを特徴とする熱処理装置の洗浄方法。 - 請求項5から請求項7のいずれかに記載の洗浄方法において、
処理対象となる基板の前記処理室への搬入を禁止した状態にて前記パーティクルを飛散させる工程を行うことを特徴とする熱処理装置の洗浄方法。
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JP2003300683A JP4421238B2 (ja) | 2003-08-26 | 2003-08-26 | 熱処理装置および熱処理装置の洗浄方法 |
US10/926,639 US7068926B2 (en) | 2003-08-26 | 2004-08-26 | Heat treatment apparatus of light-emission type and method of cleaning same |
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JP2003300683A JP4421238B2 (ja) | 2003-08-26 | 2003-08-26 | 熱処理装置および熱処理装置の洗浄方法 |
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JP2005072291A true JP2005072291A (ja) | 2005-03-17 |
JP4421238B2 JP4421238B2 (ja) | 2010-02-24 |
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JP (1) | JP4421238B2 (ja) |
Cited By (9)
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WO2007026762A1 (ja) * | 2005-08-31 | 2007-03-08 | Tokyo Electron Limited | クリーニング方法 |
JP2008028091A (ja) * | 2006-07-20 | 2008-02-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2008112798A (ja) * | 2006-10-30 | 2008-05-15 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2010258359A (ja) * | 2009-04-28 | 2010-11-11 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
WO2011159615A2 (en) * | 2010-06-18 | 2011-12-22 | Applied Materials, Inc. | Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas |
JP2014003277A (ja) * | 2012-05-23 | 2014-01-09 | Dainippon Screen Mfg Co Ltd | パーティクル測定方法、熱処理装置および熱処理方法 |
US8787741B2 (en) | 2009-04-28 | 2014-07-22 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment method and heat treatment apparatus for heating substrate by light irradiation |
KR20180097447A (ko) | 2017-02-23 | 2018-08-31 | 가부시키가이샤 스크린 홀딩스 | 열처리 방법 및 열처리 장치 |
KR20190033003A (ko) | 2017-09-20 | 2019-03-28 | 가부시키가이샤 스크린 홀딩스 | 파티클 제거 방법 및 열처리 장치 |
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JP2008546203A (ja) | 2005-06-01 | 2008-12-18 | マットソン テクノロジー インコーポレイテッド | パルス化された加熱処理の間に熱収支を最適化する方法 |
JP2007266351A (ja) * | 2006-03-29 | 2007-10-11 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP5292160B2 (ja) * | 2009-03-31 | 2013-09-18 | 東京エレクトロン株式会社 | ガス流路構造体及び基板処理装置 |
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JPWO2007026762A1 (ja) * | 2005-08-31 | 2009-03-12 | 東京エレクトロン株式会社 | クリーニング方法 |
US7691208B2 (en) | 2005-08-31 | 2010-04-06 | Tokyo Electron Limited | Cleaning method |
JP2008028091A (ja) * | 2006-07-20 | 2008-02-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2008112798A (ja) * | 2006-10-30 | 2008-05-15 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
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JP4421238B2 (ja) | 2010-02-24 |
US7068926B2 (en) | 2006-06-27 |
US20050047767A1 (en) | 2005-03-03 |
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