JP6649146B2 - 基板処理装置、基板処理システムおよび基板処理方法 - Google Patents
基板処理装置、基板処理システムおよび基板処理方法 Download PDFInfo
- Publication number
- JP6649146B2 JP6649146B2 JP2016061750A JP2016061750A JP6649146B2 JP 6649146 B2 JP6649146 B2 JP 6649146B2 JP 2016061750 A JP2016061750 A JP 2016061750A JP 2016061750 A JP2016061750 A JP 2016061750A JP 6649146 B2 JP6649146 B2 JP 6649146B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- unit
- chamber
- liquid film
- sublimable substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 308
- 238000003672 processing method Methods 0.000 title description 3
- 239000007788 liquid Substances 0.000 claims description 124
- 238000001035 drying Methods 0.000 claims description 122
- 239000000126 substance Substances 0.000 claims description 94
- 238000010438 heat treatment Methods 0.000 claims description 74
- 239000002904 solvent Substances 0.000 claims description 36
- 238000001704 evaporation Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 18
- 230000007246 mechanism Effects 0.000 claims description 17
- 238000000859 sublimation Methods 0.000 claims description 16
- 230000008022 sublimation Effects 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 46
- 230000008569 process Effects 0.000 description 33
- 239000007789 gas Substances 0.000 description 17
- 230000003028 elevating effect Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000007599 discharging Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229940070337 ammonium silicofluoride Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/001—Handling, e.g. loading or unloading arrangements
- F26B25/003—Handling, e.g. loading or unloading arrangements for articles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/02—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air
- F26B3/04—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air the gas or vapour circulating over or surrounding the materials or objects to be dried
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/18—Drying solid materials or objects by processes involving the application of heat by conduction, i.e. the heat is conveyed from the heat source, e.g. gas flame, to the materials or objects to be dried by direct contact
- F26B3/20—Drying solid materials or objects by processes involving the application of heat by conduction, i.e. the heat is conveyed from the heat source, e.g. gas flame, to the materials or objects to be dried by direct contact the heat source being a heated surface, e.g. a moving belt or conveyor
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/28—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun
- F26B3/30—Drying solid materials or objects by processes involving the application of heat by radiation, e.g. from the sun from infrared-emitting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microbiology (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Description
を備え、昇温されたプレート部に基板が載置されることで基板上の液膜から昇華性物質を析出させた後に、加熱部が基板上で析出した昇華性物質を加熱する。
2 湿式処理ユニット(液膜形成ユニット)
3,3a,3b 乾燥ユニット(基板処理装置、乾燥ユニット
4 搬送ユニット(搬送手段)
20 湿式処理チャンバー(第1チャンバー)
21 基板保持部(保持部)
23 液供給部(液供給部、液膜形成部)
30,35 乾燥チャンバー(第2チャンバー、チャンバー)
311 支持プレート(プレート部)
312 ヒーター(温度制御部)
314 回転機構(回転部)
322 加熱用ランプ(加熱部)
335 温度制御部
336,386 雰囲気制御部(排出部)
371 上プレート(加熱部、熱輻射部材)
372 ヒーター(加熱部)
373 昇降機構(移動機構)
Claims (9)
- 第1チャンバーと、
前記第1チャンバー内で、基板の表面に昇華性を有する昇華性物質を含む溶液の液膜を形成する液膜形成部と、
前記液膜が形成された前記基板を受け入れる第2チャンバーと、
前記第2チャンバー内に設けられ上面に前記基板を載置可能なプレート部と、
前記プレート部の上面を所定温度に昇温制御する温度制御部と、
前記基板上の前記昇華性物質を加熱して昇華させる加熱部と
を備え、
昇温された前記プレート部に前記基板が載置されることで前記基板上の前記液膜から前記昇華性物質を析出させた後に、前記加熱部が前記基板上で析出した前記昇華性物質を加熱する基板処理装置。 - 昇華性を有する昇華性物質を含む溶液の液膜が表面に形成された基板を受け入れるチャンバーと、
前記チャンバー内に設けられ上面に前記基板を載置可能なプレート部と、
前記プレート部の上面を所定温度に昇温制御する温度制御部と、
前記基板上の前記昇華性物質を加熱して昇華させる加熱部と
を備え、
昇温された前記プレート部に前記基板が載置されることで前記基板上の前記液膜から前記昇華性物質を析出させた後に、前記加熱部が前記基板上で析出した前記昇華性物質を加熱する基板処理装置。 - 前記加熱部は、前記プレート部の上方から前記プレート部に向けて、前記昇華性物質を昇温させる電磁波を照射する請求項1または2に記載の基板処理装置。
- 前記加熱部は、
前記プレート部よりも高温に温度制御された熱輻射部材と、
前記熱輻射部材を前記プレート部の上面に近接対向する近接位置と前記近接位置よりも前記プレート部から離間した離間位置との間で移動させる移動機構と
を有する請求項1または2に記載の基板処理装置。 - 昇華した前記昇華性物質を前記基板表面の雰囲気から排出する排出部を備える請求項1ないし4のいずれかに記載の基板処理装置。
- 前記プレート部を鉛直軸周りに回転させる回転部を備える請求項1ないし5のいずれかに記載の基板処理装置。
- 第1チャンバー内で、基板の表面に昇華性を有する昇華性物質を含む溶液の液膜を形成する液膜形成ユニットと、
第2チャンバー内で、前記液膜から溶媒を蒸発させ、残留する前記昇華性物質を昇華させる乾燥ユニットと、
前記第1チャンバーから前記第2チャンバーへ、前記液膜が形成された前記基板を搬送する搬送手段と
を備え、
前記乾燥ユニットは、
前記第2チャンバー内に設けられ上面に前記基板を載置可能なプレート部と、
前記プレート部の上面を所定温度に昇温制御する温度制御部と、
前記基板上の前記昇華性物質を加熱して昇華させる加熱部と
を有し、
昇温された前記プレート部に前記基板が載置されることで前記基板上の前記液膜から前記昇華性物質を析出させた後に、前記加熱部が前記基板上で析出した前記昇華性物質を加熱する基板処理システム。 - 前記液膜形成ユニットは、
前記第1チャンバー内で前記基板を水平姿勢に保持する保持部と、
前記基板の上面に前記溶液を供給して前記液膜を形成させる液供給部と
を有する請求項7に記載の基板処理システム。 - 第1チャンバー内で、基板の表面に昇華性を有する昇華性物質を含む溶液を供給して液膜を形成する工程と、
前記液膜が形成された前記基板を第2チャンバーへ搬送して、前記第2チャンバー内に設けられ上面が所定温度に昇温制御されたプレート部に載置する工程と、
前記第2チャンバー内で、昇温された前記プレート部に載置された前記基板上の前記液膜から溶媒を蒸発させて前記昇華性物質を析出させる工程と、
前記昇華性物質が析出した後に、前記第2チャンバー内で、前記基板上で析出した前記昇華性物質を加熱して昇華させる工程と
を備える基板処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016061750A JP6649146B2 (ja) | 2016-03-25 | 2016-03-25 | 基板処理装置、基板処理システムおよび基板処理方法 |
KR1020170015185A KR101946139B1 (ko) | 2016-03-25 | 2017-02-02 | 기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법 |
TW106104896A TWI657521B (zh) | 2016-03-25 | 2017-02-15 | 基板處理裝置、基板處理系統及基板處理方法 |
CN201710098856.0A CN107230652A (zh) | 2016-03-25 | 2017-02-23 | 基板处理装置、基板处理系统及基板处理方法 |
US15/468,246 US20170278726A1 (en) | 2016-03-25 | 2017-03-24 | Substrate processing apparatus and substrate processing method |
US17/111,556 US20210090910A1 (en) | 2016-03-25 | 2020-12-04 | Substrate processing apparatus and substrate processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016061750A JP6649146B2 (ja) | 2016-03-25 | 2016-03-25 | 基板処理装置、基板処理システムおよび基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017175049A JP2017175049A (ja) | 2017-09-28 |
JP6649146B2 true JP6649146B2 (ja) | 2020-02-19 |
Family
ID=59897354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016061750A Active JP6649146B2 (ja) | 2016-03-25 | 2016-03-25 | 基板処理装置、基板処理システムおよび基板処理方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20170278726A1 (ja) |
JP (1) | JP6649146B2 (ja) |
KR (1) | KR101946139B1 (ja) |
CN (1) | CN107230652A (ja) |
TW (1) | TWI657521B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102008566B1 (ko) * | 2016-05-24 | 2019-08-07 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
JP6953286B2 (ja) * | 2017-11-09 | 2021-10-27 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
US11854815B2 (en) * | 2018-01-29 | 2023-12-26 | Tokyo Electron Limited | Substrate drying apparatus, substrate drying method and storage medium |
JP7032955B2 (ja) * | 2018-02-28 | 2022-03-09 | 株式会社Screenホールディングス | 熱処理方法 |
CN110323161B (zh) * | 2018-03-30 | 2023-06-06 | 芝浦机械电子株式会社 | 有机膜形成装置以及有机膜制造方法 |
US11124869B2 (en) | 2018-06-22 | 2021-09-21 | SCREEN Holdings Co., Ltd. | Substrate processing method, substrate processing apparatus and pre-drying processing liquid |
JP7300272B2 (ja) * | 2018-08-24 | 2023-06-29 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7198618B2 (ja) * | 2018-09-21 | 2023-01-04 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7170506B2 (ja) * | 2018-11-05 | 2022-11-14 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP7100564B2 (ja) * | 2018-11-09 | 2022-07-13 | 株式会社Screenホールディングス | 基板乾燥方法および基板処理装置 |
JP7163199B2 (ja) * | 2019-01-08 | 2022-10-31 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7265879B2 (ja) * | 2019-02-14 | 2023-04-27 | 株式会社Screenホールディングス | 基板乾燥方法および基板処理装置 |
JP7163248B2 (ja) * | 2019-05-29 | 2022-10-31 | 株式会社Screenホールディングス | 昇華性物質含有液の製造方法、基板乾燥方法、および基板処理装置 |
CN110556322B (zh) * | 2019-09-16 | 2022-02-15 | 中电九天智能科技有限公司 | 一种激光剥离前玻璃自动风干系统及方法 |
KR102633671B1 (ko) * | 2021-10-12 | 2024-02-06 | 에이치비솔루션(주) | 하중 대항력을 가지는 웨이퍼 매니퓰레이터 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW563196B (en) * | 2000-10-30 | 2003-11-21 | Dainippon Screen Mfg | Substrate processing apparatus |
JP4421238B2 (ja) * | 2003-08-26 | 2010-02-24 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理装置の洗浄方法 |
WO2008069259A1 (en) * | 2006-12-05 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device |
JP5254120B2 (ja) * | 2009-04-22 | 2013-08-07 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5647845B2 (ja) * | 2010-09-29 | 2015-01-07 | 株式会社Screenホールディングス | 基板乾燥装置及び基板乾燥方法 |
JP2012129496A (ja) * | 2010-11-22 | 2012-07-05 | Tokyo Electron Ltd | 液処理方法、その液処理方法を実行させるためのプログラムを記録した記録媒体及び液処理装置 |
KR20120119781A (ko) * | 2011-04-22 | 2012-10-31 | 삼성전자주식회사 | 지지 유닛 및 이를 가지는 기판 처리 장치 |
JP5681560B2 (ja) * | 2011-05-17 | 2015-03-11 | 東京エレクトロン株式会社 | 基板乾燥方法及び基板処理装置 |
JP5622675B2 (ja) * | 2011-07-05 | 2014-11-12 | 株式会社東芝 | 基板処理方法及び基板処理装置 |
JP5917861B2 (ja) * | 2011-08-30 | 2016-05-18 | 株式会社Screenホールディングス | 基板処理方法 |
JP6455962B2 (ja) * | 2013-03-18 | 2019-01-23 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
US20140370451A1 (en) * | 2013-06-18 | 2014-12-18 | Tokyo Ohka Kogyo Co., Ltd. | Heating apparatus and heating method |
TWI563560B (en) * | 2013-07-16 | 2016-12-21 | Screen Holdings Co Ltd | Substrate processing apparatus and substrate processing method |
JP6427323B2 (ja) * | 2014-02-26 | 2018-11-21 | 株式会社Screenホールディングス | 基板乾燥装置および基板乾燥方法 |
JP2015185713A (ja) * | 2014-03-25 | 2015-10-22 | 株式会社東芝 | 基板処理装置及び基板処理方法 |
JP2016025233A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社東芝 | 基板処理装置、及び基板処理方法 |
JP6502206B2 (ja) | 2015-08-07 | 2019-04-17 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
-
2016
- 2016-03-25 JP JP2016061750A patent/JP6649146B2/ja active Active
-
2017
- 2017-02-02 KR KR1020170015185A patent/KR101946139B1/ko active IP Right Grant
- 2017-02-15 TW TW106104896A patent/TWI657521B/zh active
- 2017-02-23 CN CN201710098856.0A patent/CN107230652A/zh active Pending
- 2017-03-24 US US15/468,246 patent/US20170278726A1/en not_active Abandoned
-
2020
- 2020-12-04 US US17/111,556 patent/US20210090910A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20210090910A1 (en) | 2021-03-25 |
US20170278726A1 (en) | 2017-09-28 |
TW201802985A (zh) | 2018-01-16 |
KR101946139B1 (ko) | 2019-02-08 |
TWI657521B (zh) | 2019-04-21 |
JP2017175049A (ja) | 2017-09-28 |
CN107230652A (zh) | 2017-10-03 |
KR20170113035A (ko) | 2017-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6649146B2 (ja) | 基板処理装置、基板処理システムおよび基板処理方法 | |
CN107871691B (zh) | 基板处理方法和基板处理装置 | |
KR102037906B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP4118659B2 (ja) | 基板用トレイ | |
JP6455962B2 (ja) | 基板処理装置及び基板処理方法 | |
JP6461621B2 (ja) | 基板処理方法および基板処理装置 | |
JP5712101B2 (ja) | 基板処理方法及び基板処理装置 | |
JP6351993B2 (ja) | 基板処理装置及び基板処理方法 | |
JP7064339B2 (ja) | 基板処理方法および基板処理装置 | |
KR102508052B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR20150037509A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102262113B1 (ko) | 기판 처리 장치 및 방법 | |
JP3598462B2 (ja) | 乾燥方法及び乾燥装置 | |
JP6276924B2 (ja) | 基板処理装置 | |
CN108701602B (zh) | 基板处理装置 | |
JP6932017B2 (ja) | 基板処理装置および基板処理方法 | |
KR102454656B1 (ko) | 기판 처리 장치 및 방법 | |
KR102325772B1 (ko) | 기판처리장치 | |
TWI814298B (zh) | 基板乾燥裝置及基板處理裝置 | |
JPH06224113A (ja) | 塗布装置 | |
JP6302700B2 (ja) | 基板処理装置及び基板処理方法 | |
WO2023127393A1 (ja) | 基板乾燥装置、基板処理装置および基板の製造方法 | |
JP7300272B2 (ja) | 基板処理方法および基板処理装置 | |
KR20230045537A (ko) | 기판 건조 장치, 기판 처리 장치 및 기판 건조 방법 | |
TW202403861A (zh) | 基板乾燥方法與基板處理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170725 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181221 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190806 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191011 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200116 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6649146 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |