JP2005063647A5 - - Google Patents

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Publication number
JP2005063647A5
JP2005063647A5 JP2004236037A JP2004236037A JP2005063647A5 JP 2005063647 A5 JP2005063647 A5 JP 2005063647A5 JP 2004236037 A JP2004236037 A JP 2004236037A JP 2004236037 A JP2004236037 A JP 2004236037A JP 2005063647 A5 JP2005063647 A5 JP 2005063647A5
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current
temperature
memory cell
programming method
circuit
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JP2004236037A
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JP4636829B2 (ja
JP2005063647A (ja
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Priority claimed from KR10-2003-0056011A external-priority patent/KR100505701B1/ko
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JP2004236037A 2003-08-13 2004-08-13 相変化メモリのプログラミング方法および書込みドライバ回路 Expired - Fee Related JP4636829B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0056011A KR100505701B1 (ko) 2003-08-13 2003-08-13 상 변화 메모리의 셋(set) 시간을 최소화하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로
US10/845,065 US7082051B2 (en) 2003-08-13 2004-05-14 Method and driver for programming phase change memory cell

Publications (3)

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JP2005063647A JP2005063647A (ja) 2005-03-10
JP2005063647A5 true JP2005063647A5 (https=) 2007-09-20
JP4636829B2 JP4636829B2 (ja) 2011-02-23

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JP2004236037A Expired - Fee Related JP4636829B2 (ja) 2003-08-13 2004-08-13 相変化メモリのプログラミング方法および書込みドライバ回路

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US (2) US7126847B2 (https=)
JP (1) JP4636829B2 (https=)
DE (1) DE102004039977B4 (https=)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
US7372725B2 (en) * 2005-08-15 2008-05-13 Infineon Technologies Ag Integrated circuit having resistive memory
CN101180683B (zh) * 2005-09-21 2010-05-26 株式会社瑞萨科技 半导体器件
CN101292299B (zh) * 2005-10-17 2013-02-06 瑞萨电子株式会社 半导体器件
US7635855B2 (en) 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7449710B2 (en) 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
KR100871880B1 (ko) * 2006-05-30 2008-12-03 삼성전자주식회사 상 변화 메모리 장치의 메모리 셀 내의 상 변화 물질의일부를 리셋하기 위한 리셋 전류를 감소시키는 방법 및 상변화 메모리 장치
US7505330B2 (en) * 2006-08-31 2009-03-17 Micron Technology, Inc. Phase-change random access memory employing read before write for resistance stabilization
TWI323469B (en) * 2006-12-25 2010-04-11 Nanya Technology Corp Programming method of phase change memory
US7718989B2 (en) 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
TWI330846B (en) * 2007-03-08 2010-09-21 Ind Tech Res Inst A writing method and system for a phase change memory
KR100882119B1 (ko) * 2007-07-24 2009-02-05 주식회사 하이닉스반도체 상 변화 메모리 장치의 구동 방법
US7729161B2 (en) 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
US8158965B2 (en) * 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US8077505B2 (en) 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US8134857B2 (en) 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US8116115B2 (en) 2008-11-06 2012-02-14 Micron Technology, Inc. Multilevel phase change memory operation
US8031516B2 (en) * 2008-12-12 2011-10-04 Stephen Tang Writing memory cells exhibiting threshold switch behavior
US8107283B2 (en) 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
JP4720912B2 (ja) 2009-01-22 2011-07-13 ソニー株式会社 抵抗変化型メモリデバイス
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8173987B2 (en) 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US7968876B2 (en) 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US8809829B2 (en) 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8238149B2 (en) 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8110822B2 (en) 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US8198619B2 (en) 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US7894254B2 (en) 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8064248B2 (en) 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8178387B2 (en) 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
JP5645778B2 (ja) * 2011-08-26 2014-12-24 株式会社日立製作所 情報記憶素子
JP5308497B2 (ja) * 2011-10-05 2013-10-09 ルネサスエレクトロニクス株式会社 半導体装置
US9336876B1 (en) * 2013-03-15 2016-05-10 Crossbar, Inc. Soak time programming for two-terminal memory
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9343149B2 (en) * 2014-07-10 2016-05-17 Micron Technology, Inc. Enhancing nucleation in phase-change memory cells
US9583187B2 (en) * 2015-03-28 2017-02-28 Intel Corporation Multistage set procedure for phase change memory
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US10354729B1 (en) * 2017-12-28 2019-07-16 Micron Technology, Inc. Polarity-conditioned memory cell write operations
US11276462B2 (en) * 2020-06-16 2022-03-15 Intel Corporation Techniques for a multi-step current profile for a phase change memory
US11915751B2 (en) 2021-09-13 2024-02-27 International Business Machines Corporation Nonvolatile phase change material logic device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4225946A (en) * 1979-01-24 1980-09-30 Harris Corporation Multilevel erase pulse for amorphous memory devices
US6075719A (en) 1999-06-22 2000-06-13 Energy Conversion Devices, Inc. Method of programming phase-change memory element
US6487113B1 (en) * 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
US6570784B2 (en) * 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
JP2003100084A (ja) * 2001-09-27 2003-04-04 Toshiba Corp 相変化型不揮発性記憶装置
US6625054B2 (en) * 2001-12-28 2003-09-23 Intel Corporation Method and apparatus to program a phase change memory
JP4218527B2 (ja) * 2002-02-01 2009-02-04 株式会社日立製作所 記憶装置
JP3999549B2 (ja) * 2002-04-01 2007-10-31 株式会社リコー 相変化材料素子および半導体メモリ
DE60227534D1 (de) 2002-11-18 2008-08-21 St Microelectronics Srl Schaltung und Anordnung zur Tempeaturüberwachung von chalcogenische Elementen, insbesondere von Phasenänderungsspeicherelementen
KR100498493B1 (ko) * 2003-04-04 2005-07-01 삼성전자주식회사 저전류 고속 상변화 메모리 및 그 구동 방식
KR100564567B1 (ko) * 2003-06-03 2006-03-29 삼성전자주식회사 상 변화 메모리의 기입 드라이버 회로
EP1489622B1 (en) * 2003-06-16 2007-08-15 STMicroelectronics S.r.l. Writing circuit for a phase change memory device
KR100532462B1 (ko) * 2003-08-22 2005-12-01 삼성전자주식회사 상 변화 메모리 장치의 기입 전류 량을 제어하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로
KR100564602B1 (ko) * 2003-12-30 2006-03-29 삼성전자주식회사 상 변화 메모리 어레이의 셋 프로그래밍 방법 및 기입드라이버 회로
KR100574975B1 (ko) * 2004-03-05 2006-05-02 삼성전자주식회사 상 변화 메모리 어레이의 셋 프로그래밍 방법 및 기입드라이버 회로
KR100682895B1 (ko) * 2004-11-06 2007-02-15 삼성전자주식회사 다양한 저항 상태를 지닌 저항체를 이용한 비휘발성메모리 소자 및 그 작동 방법

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