DE102004039977B4 - Programmierverfahren und Treiberschaltung für eine Phasenwechselspeicherzelle - Google Patents

Programmierverfahren und Treiberschaltung für eine Phasenwechselspeicherzelle Download PDF

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Publication number
DE102004039977B4
DE102004039977B4 DE102004039977A DE102004039977A DE102004039977B4 DE 102004039977 B4 DE102004039977 B4 DE 102004039977B4 DE 102004039977 A DE102004039977 A DE 102004039977A DE 102004039977 A DE102004039977 A DE 102004039977A DE 102004039977 B4 DE102004039977 B4 DE 102004039977B4
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DE
Germany
Prior art keywords
current
memory cell
temperature
circuit
control signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102004039977A
Other languages
German (de)
English (en)
Other versions
DE102004039977A1 (de
Inventor
Yong-ho Suwon Ha
Beak-hyung Hwaseong Cho
Ji-hye Yongin Yi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2003-0056011A external-priority patent/KR100505701B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102004039977A1 publication Critical patent/DE102004039977A1/de
Application granted granted Critical
Publication of DE102004039977B4 publication Critical patent/DE102004039977B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
DE102004039977A 2003-08-13 2004-08-12 Programmierverfahren und Treiberschaltung für eine Phasenwechselspeicherzelle Expired - Fee Related DE102004039977B4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR03/56011 2003-08-13
KR10-2003-0056011 2003-08-13
KR10-2003-0056011A KR100505701B1 (ko) 2003-08-13 2003-08-13 상 변화 메모리의 셋(ｓｅｔ) 시간을 최소화하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로
US10/845,065 2004-05-14
US10/845,065 US7082051B2 (en) 2003-08-13 2004-05-14 Method and driver for programming phase change memory cell

Publications (2)

Publication Number Publication Date
DE102004039977A1 DE102004039977A1 (de) 2005-03-17
DE102004039977B4 true DE102004039977B4 (de) 2008-09-11

Family

ID=36815432

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004039977A Expired - Fee Related DE102004039977B4 (de) 2003-08-13 2004-08-12 Programmierverfahren und Treiberschaltung für eine Phasenwechselspeicherzelle

Country Status (3)

Country Link
US (2) US7126847B2 (https=)
JP (1) JP4636829B2 (https=)
DE (1) DE102004039977B4 (https=)

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US8158965B2 (en) * 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
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US8134857B2 (en) 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
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US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
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US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8173987B2 (en) 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US7968876B2 (en) 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US8809829B2 (en) 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8238149B2 (en) 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8110822B2 (en) 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
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US7894254B2 (en) 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
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US8178387B2 (en) 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
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US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
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JP5645778B2 (ja) * 2011-08-26 2014-12-24 株式会社日立製作所 情報記憶素子
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US9336876B1 (en) * 2013-03-15 2016-05-10 Crossbar, Inc. Soak time programming for two-terminal memory
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US9343149B2 (en) * 2014-07-10 2016-05-17 Micron Technology, Inc. Enhancing nucleation in phase-change memory cells
US9583187B2 (en) * 2015-03-28 2017-02-28 Intel Corporation Multistage set procedure for phase change memory
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Also Published As

Publication number Publication date
JP4636829B2 (ja) 2011-02-23
DE102004039977A1 (de) 2005-03-17
US7126847B2 (en) 2006-10-24
JP2005063647A (ja) 2005-03-10
US20060181931A1 (en) 2006-08-17
US20060181933A1 (en) 2006-08-17
US7126846B2 (en) 2006-10-24

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20150303