JP4636829B2 - 相変化メモリのプログラミング方法および書込みドライバ回路 - Google Patents

相変化メモリのプログラミング方法および書込みドライバ回路 Download PDF

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Publication number
JP4636829B2
JP4636829B2 JP2004236037A JP2004236037A JP4636829B2 JP 4636829 B2 JP4636829 B2 JP 4636829B2 JP 2004236037 A JP2004236037 A JP 2004236037A JP 2004236037 A JP2004236037 A JP 2004236037A JP 4636829 B2 JP4636829 B2 JP 4636829B2
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Japan
Prior art keywords
current
memory cell
temperature
control signal
circuit
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JP2004236037A
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Japanese (ja)
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JP2005063647A5 (https=
JP2005063647A (ja
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河龍湖
趙栢衡
李知恵
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR10-2003-0056011A external-priority patent/KR100505701B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2004236037A 2003-08-13 2004-08-13 相変化メモリのプログラミング方法および書込みドライバ回路 Expired - Fee Related JP4636829B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0056011A KR100505701B1 (ko) 2003-08-13 2003-08-13 상 변화 메모리의 셋(ｓｅｔ) 시간을 최소화하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로
US10/845,065 US7082051B2 (en) 2003-08-13 2004-05-14 Method and driver for programming phase change memory cell

Publications (3)

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JP2005063647A JP2005063647A (ja) 2005-03-10
JP2005063647A5 JP2005063647A5 (https=) 2007-09-20
JP4636829B2 true JP4636829B2 (ja) 2011-02-23

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JP2004236037A Expired - Fee Related JP4636829B2 (ja) 2003-08-13 2004-08-13 相変化メモリのプログラミング方法および書込みドライバ回路

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US (2) US7126847B2 (https=)
JP (1) JP4636829B2 (https=)
DE (1) DE102004039977B4 (https=)

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US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
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Also Published As

Publication number Publication date
DE102004039977A1 (de) 2005-03-17
DE102004039977B4 (de) 2008-09-11
US7126847B2 (en) 2006-10-24
JP2005063647A (ja) 2005-03-10
US20060181931A1 (en) 2006-08-17
US20060181933A1 (en) 2006-08-17
US7126846B2 (en) 2006-10-24

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