JP2004531889A - ゲルマニウム層を形成する方法 - Google Patents

ゲルマニウム層を形成する方法 Download PDF

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Publication number
JP2004531889A
JP2004531889A JP2002587677A JP2002587677A JP2004531889A JP 2004531889 A JP2004531889 A JP 2004531889A JP 2002587677 A JP2002587677 A JP 2002587677A JP 2002587677 A JP2002587677 A JP 2002587677A JP 2004531889 A JP2004531889 A JP 2004531889A
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layer
ridges
substrate
germanium
bumps
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JP2004531889A5 (https=
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セイフェルト、ウェルナー
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BTG International Ltd
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BTG International Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2002587677A 2001-05-08 2002-04-30 ゲルマニウム層を形成する方法 Pending JP2004531889A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0111207.7A GB0111207D0 (en) 2001-05-08 2001-05-08 A method to produce germanium layers
PCT/GB2002/001980 WO2002090625A1 (en) 2001-05-08 2002-04-30 A method to produce germanium layers

Publications (2)

Publication Number Publication Date
JP2004531889A true JP2004531889A (ja) 2004-10-14
JP2004531889A5 JP2004531889A5 (https=) 2005-08-25

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Family Applications (1)

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JP2002587677A Pending JP2004531889A (ja) 2001-05-08 2002-04-30 ゲルマニウム層を形成する方法

Country Status (6)

Country Link
US (1) US6958254B2 (https=)
EP (1) EP1386025A1 (https=)
JP (1) JP2004531889A (https=)
CA (1) CA2445772A1 (https=)
GB (1) GB0111207D0 (https=)
WO (1) WO2002090625A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
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JP2010021583A (ja) * 2008-03-01 2010-01-28 Sumitomo Chemical Co Ltd 半導体基板、半導体基板の製造方法および電子デバイス
WO2010038460A1 (ja) * 2008-10-02 2010-04-08 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法
JP2010534612A (ja) * 2007-07-26 2010-11-11 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ エピタキシャル方法およびこの方法によって成長させられたテンプレート
JP2010534611A (ja) * 2007-07-26 2010-11-11 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ 改善されたエピタキシャル材料を製造するための方法
US8686472B2 (en) 2008-10-02 2014-04-01 Sumitomo Chemical Company, Limited Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate

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US7012314B2 (en) 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7579263B2 (en) 2003-09-09 2009-08-25 Stc.Unm Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
CN101268547B (zh) 2005-07-26 2014-07-09 琥珀波系统公司 包含交替有源区材料的结构及其形成方法
US20070054474A1 (en) * 2005-08-23 2007-03-08 Tracy Clarence J Crack-free III-V epitaxy on germanium on insulator (GOI) substrates
US8946674B2 (en) * 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
FR2896337A1 (fr) * 2006-01-17 2007-07-20 St Microelectronics Crolles 2 Procede de realisation d'une couche monocristalline sur une couche dielectrique
FR2896338B1 (fr) 2006-01-17 2008-04-18 St Microelectronics Crolles 2 Procede de realisation d'une couche monocristalline sur une couche dielectrique
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008039495A1 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
GB0701069D0 (en) * 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
RU2336593C1 (ru) * 2007-04-11 2008-10-20 Институт физики полупроводников Сибирского отделения Российской академии наук Способ создания пленок германия
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
DE112008002387B4 (de) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung,
US8652947B2 (en) 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
US20110006399A1 (en) * 2007-12-28 2011-01-13 Sumitomo Chemical Company, Limited Semiconductor wafer and semiconductor wafer manufacturing method
WO2009128646A2 (en) * 2008-04-16 2009-10-22 Lumigntech Co., Ltd. Semiconductor substrate and method for manufacturing the same
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US20110180849A1 (en) * 2008-10-02 2011-07-28 Sumitomo Chemical Company, Limited Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
WO2010071633A1 (en) * 2008-12-16 2010-06-24 Hewlett-Packard Development Company, L.P. Semiconductor structure having an elog on a thermally and electrically conductive mask
JP4892579B2 (ja) * 2009-03-30 2012-03-07 株式会社日立国際電気 半導体装置の製造方法
JP5705207B2 (ja) 2009-04-02 2015-04-22 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 結晶物質の非極性面から形成される装置とその製作方法
US8119494B1 (en) * 2010-07-29 2012-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Defect-free hetero-epitaxy of lattice mismatched semiconductors
US8937366B1 (en) * 2011-04-26 2015-01-20 Stc.Unm Selective epitaxial overgrowth comprising air gaps
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
CN103397381A (zh) * 2013-08-07 2013-11-20 常熟苏大低碳应用技术研究院有限公司 聚合物辅助沉积制备外延锗薄膜制备方法
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
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RU2621370C2 (ru) * 2015-09-18 2017-06-02 федеральное государственное бюджетное образовательное учреждение высшего образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова Способ изготовления полупроводникового прибора
RU2755774C1 (ru) * 2020-12-09 2021-09-21 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

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Cited By (8)

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Publication number Priority date Publication date Assignee Title
JP2010534612A (ja) * 2007-07-26 2010-11-11 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ エピタキシャル方法およびこの方法によって成長させられたテンプレート
JP2010534611A (ja) * 2007-07-26 2010-11-11 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ 改善されたエピタキシャル材料を製造するための方法
US8574968B2 (en) 2007-07-26 2013-11-05 Soitec Epitaxial methods and templates grown by the methods
JP2010021583A (ja) * 2008-03-01 2010-01-28 Sumitomo Chemical Co Ltd 半導体基板、半導体基板の製造方法および電子デバイス
US8766318B2 (en) 2008-03-01 2014-07-01 Sumitomo Chemical Company, Limited Semiconductor wafer, method of manufacturing a semiconductor wafer, and electronic device
WO2010038460A1 (ja) * 2008-10-02 2010-04-08 住友化学株式会社 半導体基板、電子デバイス、および半導体基板の製造方法
JP2010226079A (ja) * 2008-10-02 2010-10-07 Sumitomo Chemical Co Ltd 半導体基板、電子デバイス、および半導体基板の製造方法
US8686472B2 (en) 2008-10-02 2014-04-01 Sumitomo Chemical Company, Limited Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate

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US20040157412A1 (en) 2004-08-12
EP1386025A1 (en) 2004-02-04
GB0111207D0 (en) 2001-06-27
US6958254B2 (en) 2005-10-25
WO2002090625A1 (en) 2002-11-14
CA2445772A1 (en) 2002-11-14

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