JP2004531889A5 - - Google Patents

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Publication number
JP2004531889A5
JP2004531889A5 JP2002587677A JP2002587677A JP2004531889A5 JP 2004531889 A5 JP2004531889 A5 JP 2004531889A5 JP 2002587677 A JP2002587677 A JP 2002587677A JP 2002587677 A JP2002587677 A JP 2002587677A JP 2004531889 A5 JP2004531889 A5 JP 2004531889A5
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JP
Japan
Prior art keywords
layer
desired material
ridges
substrate
lattice constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002587677A
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English (en)
Japanese (ja)
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JP2004531889A (ja
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Publication date
Priority claimed from GBGB0111207.7A external-priority patent/GB0111207D0/en
Application filed filed Critical
Publication of JP2004531889A publication Critical patent/JP2004531889A/ja
Publication of JP2004531889A5 publication Critical patent/JP2004531889A5/ja
Pending legal-status Critical Current

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JP2002587677A 2001-05-08 2002-04-30 ゲルマニウム層を形成する方法 Pending JP2004531889A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0111207.7A GB0111207D0 (en) 2001-05-08 2001-05-08 A method to produce germanium layers
PCT/GB2002/001980 WO2002090625A1 (en) 2001-05-08 2002-04-30 A method to produce germanium layers

Publications (2)

Publication Number Publication Date
JP2004531889A JP2004531889A (ja) 2004-10-14
JP2004531889A5 true JP2004531889A5 (https=) 2005-08-25

Family

ID=9914208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002587677A Pending JP2004531889A (ja) 2001-05-08 2002-04-30 ゲルマニウム層を形成する方法

Country Status (6)

Country Link
US (1) US6958254B2 (https=)
EP (1) EP1386025A1 (https=)
JP (1) JP2004531889A (https=)
CA (1) CA2445772A1 (https=)
GB (1) GB0111207D0 (https=)
WO (1) WO2002090625A1 (https=)

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US8652947B2 (en) 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
US20110006399A1 (en) * 2007-12-28 2011-01-13 Sumitomo Chemical Company, Limited Semiconductor wafer and semiconductor wafer manufacturing method
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WO2009128646A2 (en) * 2008-04-16 2009-10-22 Lumigntech Co., Ltd. Semiconductor substrate and method for manufacturing the same
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
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US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
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JP4892579B2 (ja) * 2009-03-30 2012-03-07 株式会社日立国際電気 半導体装置の製造方法
JP5705207B2 (ja) 2009-04-02 2015-04-22 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 結晶物質の非極性面から形成される装置とその製作方法
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CN103397381A (zh) * 2013-08-07 2013-11-20 常熟苏大低碳应用技术研究院有限公司 聚合物辅助沉积制备外延锗薄膜制备方法
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
KR102183594B1 (ko) * 2014-12-15 2020-11-26 스트라티오 인코포레이티드 제어된 열적 산화에 의한 에피 성장한 게르마늄에서의 표면 거칠기의 감소
RU2621370C2 (ru) * 2015-09-18 2017-06-02 федеральное государственное бюджетное образовательное учреждение высшего образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова Способ изготовления полупроводникового прибора
RU2755774C1 (ru) * 2020-12-09 2021-09-21 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

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