GB0111207D0 - A method to produce germanium layers - Google Patents

A method to produce germanium layers

Info

Publication number
GB0111207D0
GB0111207D0 GBGB0111207.7A GB0111207A GB0111207D0 GB 0111207 D0 GB0111207 D0 GB 0111207D0 GB 0111207 A GB0111207 A GB 0111207A GB 0111207 D0 GB0111207 D0 GB 0111207D0
Authority
GB
United Kingdom
Prior art keywords
germanium layers
produce germanium
produce
layers
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0111207.7A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BTG International Ltd
Original Assignee
BTG International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BTG International Ltd filed Critical BTG International Ltd
Priority to GBGB0111207.7A priority Critical patent/GB0111207D0/en
Publication of GB0111207D0 publication Critical patent/GB0111207D0/en
Priority to US10/477,130 priority patent/US6958254B2/en
Priority to EP02769150A priority patent/EP1386025A1/en
Priority to CA002445772A priority patent/CA2445772A1/en
Priority to JP2002587677A priority patent/JP2004531889A/ja
Priority to PCT/GB2002/001980 priority patent/WO2002090625A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GBGB0111207.7A 2001-05-08 2001-05-08 A method to produce germanium layers Ceased GB0111207D0 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GBGB0111207.7A GB0111207D0 (en) 2001-05-08 2001-05-08 A method to produce germanium layers
US10/477,130 US6958254B2 (en) 2001-05-08 2002-04-30 Method to produce germanium layers
EP02769150A EP1386025A1 (en) 2001-05-08 2002-04-30 A method to produce germanium layers
CA002445772A CA2445772A1 (en) 2001-05-08 2002-04-30 A method to produce germanium layers
JP2002587677A JP2004531889A (ja) 2001-05-08 2002-04-30 ゲルマニウム層を形成する方法
PCT/GB2002/001980 WO2002090625A1 (en) 2001-05-08 2002-04-30 A method to produce germanium layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0111207.7A GB0111207D0 (en) 2001-05-08 2001-05-08 A method to produce germanium layers

Publications (1)

Publication Number Publication Date
GB0111207D0 true GB0111207D0 (en) 2001-06-27

Family

ID=9914208

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0111207.7A Ceased GB0111207D0 (en) 2001-05-08 2001-05-08 A method to produce germanium layers

Country Status (6)

Country Link
US (1) US6958254B2 (https=)
EP (1) EP1386025A1 (https=)
JP (1) JP2004531889A (https=)
CA (1) CA2445772A1 (https=)
GB (1) GB0111207D0 (https=)
WO (1) WO2002090625A1 (https=)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012314B2 (en) 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7579263B2 (en) 2003-09-09 2009-08-25 Stc.Unm Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
CN101268547B (zh) 2005-07-26 2014-07-09 琥珀波系统公司 包含交替有源区材料的结构及其形成方法
US20070054474A1 (en) * 2005-08-23 2007-03-08 Tracy Clarence J Crack-free III-V epitaxy on germanium on insulator (GOI) substrates
US8946674B2 (en) * 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
FR2896337A1 (fr) * 2006-01-17 2007-07-20 St Microelectronics Crolles 2 Procede de realisation d'une couche monocristalline sur une couche dielectrique
FR2896338B1 (fr) 2006-01-17 2008-04-18 St Microelectronics Crolles 2 Procede de realisation d'une couche monocristalline sur une couche dielectrique
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008039495A1 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
GB0701069D0 (en) * 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
RU2336593C1 (ru) * 2007-04-11 2008-10-20 Институт физики полупроводников Сибирского отделения Российской академии наук Способ создания пленок германия
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
WO2009015337A1 (en) * 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Methods for producing improved epitaxial materials
EP2171748A1 (en) * 2007-07-26 2010-04-07 S.O.I.Tec Silicon on Insulator Technologies Epitaxial methods and templates grown by the methods
DE112008002387B4 (de) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung,
US8652947B2 (en) 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
US20110006399A1 (en) * 2007-12-28 2011-01-13 Sumitomo Chemical Company, Limited Semiconductor wafer and semiconductor wafer manufacturing method
CN101952937B (zh) * 2008-03-01 2012-11-07 住友化学株式会社 半导体基板、半导体基板的制造方法及电子装置
WO2009128646A2 (en) * 2008-04-16 2009-10-22 Lumigntech Co., Ltd. Semiconductor substrate and method for manufacturing the same
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US20110180849A1 (en) * 2008-10-02 2011-07-28 Sumitomo Chemical Company, Limited Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
US20110186911A1 (en) * 2008-10-02 2011-08-04 Sumitomo Chemical Company, Limited Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
CN102171790A (zh) 2008-10-02 2011-08-31 住友化学株式会社 半导体基板、电子器件、以及半导体基板的制造方法
WO2010071633A1 (en) * 2008-12-16 2010-06-24 Hewlett-Packard Development Company, L.P. Semiconductor structure having an elog on a thermally and electrically conductive mask
JP4892579B2 (ja) * 2009-03-30 2012-03-07 株式会社日立国際電気 半導体装置の製造方法
JP5705207B2 (ja) 2009-04-02 2015-04-22 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 結晶物質の非極性面から形成される装置とその製作方法
US8119494B1 (en) * 2010-07-29 2012-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Defect-free hetero-epitaxy of lattice mismatched semiconductors
US8937366B1 (en) * 2011-04-26 2015-01-20 Stc.Unm Selective epitaxial overgrowth comprising air gaps
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
CN103397381A (zh) * 2013-08-07 2013-11-20 常熟苏大低碳应用技术研究院有限公司 聚合物辅助沉积制备外延锗薄膜制备方法
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
KR102183594B1 (ko) * 2014-12-15 2020-11-26 스트라티오 인코포레이티드 제어된 열적 산화에 의한 에피 성장한 게르마늄에서의 표면 거칠기의 감소
RU2621370C2 (ru) * 2015-09-18 2017-06-02 федеральное государственное бюджетное образовательное учреждение высшего образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова Способ изготовления полупроводникового прибора
RU2755774C1 (ru) * 2020-12-09 2021-09-21 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
US5245206A (en) 1992-05-12 1993-09-14 International Business Machines Corporation Capacitors with roughened single crystal plates
US5405453A (en) * 1993-11-08 1995-04-11 Applied Solar Energy Corporation High efficiency multi-junction solar cell
DE19522054C1 (de) * 1995-06-17 1996-11-28 Inst Halbleiterphysik Gmbh Verfahren zur Herstellung von Ge-Quantendrähten auf Si-Substraten für Halbleiterbauelemente
JP4066002B2 (ja) * 1997-04-15 2008-03-26 富士通株式会社 半導体量子ドットの製造方法
WO1999019546A1 (en) 1997-10-10 1999-04-22 Cornell Research Foundation, Inc. Methods for growing defect-free heteroepitaxial layers
FR2773177B1 (fr) 1997-12-29 2000-03-17 France Telecom Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
JP2002184970A (ja) * 2000-12-15 2002-06-28 Fujitsu Ltd 量子ドットを含む半導体装置、その製造方法及び半導体レーザ装置

Also Published As

Publication number Publication date
US20040157412A1 (en) 2004-08-12
EP1386025A1 (en) 2004-02-04
US6958254B2 (en) 2005-10-25
JP2004531889A (ja) 2004-10-14
WO2002090625A1 (en) 2002-11-14
CA2445772A1 (en) 2002-11-14

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)