JP2004529487A - 単一モードｖｃｓｅｌ用の多機能方法およびシステム - Google Patents

単一モードｖｃｓｅｌ用の多機能方法およびシステム Download PDF

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Publication number
JP2004529487A
JP2004529487A JP2002547270A JP2002547270A JP2004529487A JP 2004529487 A JP2004529487 A JP 2004529487A JP 2002547270 A JP2002547270 A JP 2002547270A JP 2002547270 A JP2002547270 A JP 2002547270A JP 2004529487 A JP2004529487 A JP 2004529487A
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JP
Japan
Prior art keywords
layer
disposed
mirror portion
vcsel
equipotential
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Pending
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JP2002547270A
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Japanese (ja)
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JP2004529487A5 (https=
Inventor
ジョンソン，ラルフ・エイチ
モラルズ，ギルバート
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Honeywell International Inc
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Honeywell International Inc
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Publication of JP2004529487A publication Critical patent/JP2004529487A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18316—Airgap confined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2002547270A 2000-11-28 2001-11-26 単一モードｖｃｓｅｌ用の多機能方法およびシステム Pending JP2004529487A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/724,820 US6905900B1 (en) 2000-11-28 2000-11-28 Versatile method and system for single mode VCSELs
PCT/US2001/044385 WO2002045217A2 (en) 2000-11-28 2001-11-26 Versatile method and system for single mode vcsels

Publications (2)

Publication Number Publication Date
JP2004529487A true JP2004529487A (ja) 2004-09-24
JP2004529487A5 JP2004529487A5 (https=) 2011-05-12

Family

ID=24912046

Family Applications (1)

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JP2002547270A Pending JP2004529487A (ja) 2000-11-28 2001-11-26 単一モードｖｃｓｅｌ用の多機能方法およびシステム

Country Status (7)

Country Link
US (4) US6905900B1 (https=)
EP (1) EP1354376A2 (https=)
JP (1) JP2004529487A (https=)
KR (1) KR20030060961A (https=)
CA (1) CA2430348A1 (https=)
TW (1) TW512562B (https=)
WO (1) WO2002045217A2 (https=)

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Publication number Priority date Publication date Assignee Title
JP2006114915A (ja) * 2004-10-14 2006-04-27 Samsung Electronics Co Ltd ファンネル構造のｖｅｃｓｅｌ
JP2006351798A (ja) * 2005-06-15 2006-12-28 Fuji Xerox Co Ltd トンネル接合型面発光半導体レーザ装置およびその製造方法
JP2007201398A (ja) * 2005-07-04 2007-08-09 Sony Corp 面発光型半導体レーザ
JP2010251342A (ja) * 2009-03-23 2010-11-04 Sony Corp 半導体レーザ
JP2011014793A (ja) * 2009-07-03 2011-01-20 Canon Inc 面発光レーザ、面発光レーザアレイ及び画像形成装置
JP2011060993A (ja) * 2009-09-10 2011-03-24 Canon Inc 面発光レーザおよび面発光レーザアレイ
JP2011124314A (ja) * 2009-12-09 2011-06-23 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP2011134746A (ja) * 2009-12-22 2011-07-07 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP2012009727A (ja) * 2010-06-28 2012-01-12 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US8842709B2 (en) 2012-08-07 2014-09-23 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser, manufacturing method for surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and information processing device
JPWO2021090670A1 (https=) * 2019-11-06 2021-05-14
US20220352693A1 (en) * 2021-04-30 2022-11-03 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6904072B2 (en) * 2001-12-28 2005-06-07 Finisar Corporation Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer
KR100475858B1 (ko) * 2002-04-01 2005-03-18 주식회사 테라스테이트 수직공진 표면 발광레이저
JP3729263B2 (ja) * 2002-09-25 2005-12-21 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法、光モジュール、光伝達装置
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
JP2004288674A (ja) * 2003-03-19 2004-10-14 Fuji Xerox Co Ltd 面発光型半導体レーザおよびそれを用いた光通信システム
JP3838218B2 (ja) * 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US20060002442A1 (en) 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
KR100624433B1 (ko) * 2004-08-13 2006-09-19 삼성전자주식회사 Ｐ형 반도체 탄소 나노튜브 및 그 제조 방법
US7528824B2 (en) * 2004-09-30 2009-05-05 Microsoft Corporation Keyboard or other input device using ranging for detection of control piece movement
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7826506B2 (en) * 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
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US8815617B2 (en) * 2004-10-01 2014-08-26 Finisar Corporation Passivation of VCSEL sidewalls
KR100982421B1 (ko) * 2004-10-14 2010-09-15 삼성전자주식회사 깔대기 형태의 전류주입영역을 구비하는 면발광 고출력레이저 소자
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7385230B1 (en) * 2005-02-08 2008-06-10 The University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
US20060213997A1 (en) * 2005-03-23 2006-09-28 Microsoft Corporation Method and apparatus for a cursor control device barcode reader
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US7268705B2 (en) * 2005-06-17 2007-09-11 Microsoft Corporation Input detection based on speckle-modulated laser self-mixing
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US7283214B2 (en) * 2005-10-14 2007-10-16 Microsoft Corporation Self-mixing laser range sensor
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US20070109267A1 (en) * 2005-11-14 2007-05-17 Microsoft Corporation Speckle-based two-dimensional motion tracking
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DE102006034847A1 (de) * 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US8213474B2 (en) * 2007-12-21 2012-07-03 Finisar Corporation Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption
US7672350B2 (en) * 2008-06-30 2010-03-02 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Method and device for using optical feedback to overcome bandwidth limitations caused by relaxation oscillation in vertical cavity surface emitting lasers (VCSELs)
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07507183A (ja) * 1992-05-07 1995-08-03 フオトニクス　リサーチ　インコーポレーテツド 内部共振器構造をもつ垂直キャビティ・面発光レーザ
JPH1056233A (ja) * 1996-06-20 1998-02-24 Hewlett Packard Co <Hp> 高輝度単一モードｖｃｓｅｌ
JPH1075013A (ja) * 1996-07-30 1998-03-17 Hewlett Packard Co <Hp> 長波長赤外線垂直共振型面発光レーザ
JPH11274645A (ja) * 1998-03-20 1999-10-08 Toshiba Corp 半導体素子及びその製造方法
JP2000277852A (ja) * 1999-03-24 2000-10-06 Fuji Xerox Co Ltd 表面発光型半導体レーザ、及びその製造方法

Family Cites Families (173)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1108902A (en) 1978-06-15 1981-09-15 R. Ian Macdonald Wavelength selective optical coupler
US4317085A (en) 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
JPS60123084A (ja) 1983-12-08 1985-07-01 Matsushita Electric Ind Co Ltd 半導体光発生装置
US4675058A (en) 1983-12-14 1987-06-23 Honeywell Inc. Method of manufacturing a high-bandwidth, high radiance, surface emitting LED
JPS60123084U (ja) 1984-01-25 1985-08-19 日本自動販売株式会社 自動販売機の容器繰出し装置
JPS60167540A (ja) 1984-02-09 1985-08-30 Dainichi Nippon Cables Ltd トランシ−バ用テスタ
JPS619047A (ja) 1984-06-25 1986-01-16 Fujitsu Ltd 位相修正方式
US4660207A (en) 1984-11-21 1987-04-21 Northern Telecom Limited Surface-emitting light emitting device
US4784722A (en) 1985-01-22 1988-11-15 Massachusetts Institute Of Technology Method forming surface emitting diode laser
GB2203891A (en) 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
JPS63318195A (ja) 1987-06-19 1988-12-27 Agency Of Ind Science & Technol 横方向埋め込み型面発光レ−ザ
US4885592A (en) 1987-12-28 1989-12-05 Kofol J Stephen Electronically steerable antenna
US4943970A (en) 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4901327A (en) 1988-10-24 1990-02-13 General Dynamics Corporation, Electronics Division Transverse injection surface emitting laser
US4956844A (en) 1989-03-17 1990-09-11 Massachusetts Institute Of Technology Two-dimensional surface-emitting laser array
US5031187A (en) 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
US5204871A (en) 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor
US5115442A (en) 1990-04-13 1992-05-19 At&T Bell Laboratories Top-emitting surface emitting laser structures
US5052016A (en) 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
US5056098A (en) 1990-07-05 1991-10-08 At&T Bell Laboratories Vertical cavity laser with mirror having controllable reflectivity
US5158908A (en) 1990-08-31 1992-10-27 At&T Bell Laboratories Distributed bragg reflectors and devices incorporating same
US5237581A (en) 1990-11-14 1993-08-17 Nec Corporation Semiconductor multilayer reflector and light emitting device with the same
US5216263A (en) 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
US5079774A (en) 1990-12-27 1992-01-07 International Business Machines Corporation Polarization-tunable optoelectronic devices
US5062115A (en) 1990-12-28 1991-10-29 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
US5262360A (en) 1990-12-31 1993-11-16 The Board Of Trustees Of The University Of Illinois AlGaAs native oxide
US5337183A (en) 1991-02-01 1994-08-09 Yeda Research And Development Co. Ltd. Distributed resonant cavity light beam modulator
US5117469A (en) 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
US5157537A (en) 1991-02-01 1992-10-20 Yeda Research And Development Co., Ltd. Distributed resonant cavity light beam modulator
US5625637A (en) * 1991-03-28 1997-04-29 Seiko Epson Corporation Surface emitting semiconductor laser and its manufacturing process
US5140605A (en) 1991-06-27 1992-08-18 Xerox Corporation Thermally stabilized diode laser structure
US5216680A (en) 1991-07-11 1993-06-01 Board Of Regents, The University Of Texas System Optical guided-mode resonance filter
JP3072795B2 (ja) 1991-10-08 2000-08-07 キヤノン株式会社 電子放出素子と該素子を用いた電子線発生装置及び画像形成装置
US5258990A (en) 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5404373A (en) 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device
US5212706A (en) 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
US5497390A (en) 1992-01-31 1996-03-05 Nippon Telegraph And Telephone Corporation Polarization mode switching semiconductor laser apparatus
US5325386A (en) 1992-04-21 1994-06-28 Bandgap Technology Corporation Vertical-cavity surface emitting laser assay display system
US5285466A (en) 1992-05-20 1994-02-08 Wisconsin Alumni Research Foundation Feedback mechanism for vertical cavity surface emitting lasers
US5338142A (en) * 1992-07-07 1994-08-16 Michael Gonzales Rotating quick release mechanism for securing parts to bicycles
US5293392A (en) 1992-07-31 1994-03-08 Motorola, Inc. Top emitting VCSEL with etch stop layer
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
JPH0669585A (ja) 1992-08-12 1994-03-11 Fujitsu Ltd 面発光半導体レーザ及びその製造方法
US5386426A (en) 1992-09-10 1995-01-31 Hughes Aircraft Company Narrow bandwidth laser array system
US5396508A (en) 1992-09-22 1995-03-07 Xerox Corporation Polarization switchable quantum well laser
US5412678A (en) 1992-09-22 1995-05-02 Xerox Corporation Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers
US5438584A (en) 1992-09-22 1995-08-01 Xerox Corporation Dual polarization laser diode with quaternary material system
US5363397A (en) 1992-10-29 1994-11-08 Internatioal Business Machines Corporation Integrated short cavity laser with bragg mirrors
US5428634A (en) 1992-11-05 1995-06-27 The United States Of America As Represented By The United States Department Of Energy Visible light emitting vertical cavity surface emitting lasers
DE4240706A1 (de) 1992-12-03 1994-06-09 Siemens Ag Oberflächenemittierende Laserdiode
US5465263A (en) 1992-12-12 1995-11-07 Xerox Corporation Monolithic, multiple wavelength, dual polarization laser diode arrays
US5331654A (en) 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US5416044A (en) 1993-03-12 1995-05-16 Matsushita Electric Industrial Co., Ltd. Method for producing a surface-emitting laser
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5351256A (en) 1993-04-28 1994-09-27 The United States Of America As Represented By The United States Department Of Energy Electrically injected visible vertical cavity surface emitting laser diodes
US5359618A (en) 1993-06-01 1994-10-25 Motorola, Inc. High efficiency VCSEL and method of fabrication
US5359447A (en) 1993-06-25 1994-10-25 Hewlett-Packard Company Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes
SE501721C2 (sv) 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laseranordning med i en optisk kavitet seriekopplade laserstrukturer
SE501722C2 (sv) 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Ytemitterande laseranordning med vertikal kavitet
US5446754A (en) 1993-11-05 1995-08-29 Photonics Research Incorporated Phased array semiconductor laser
US5422901A (en) 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
JP3210159B2 (ja) 1993-12-10 2001-09-17 キヤノン株式会社 半導体レーザ、光源装置、光通信システム及び光通信方法
US5475701A (en) 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
US5390209A (en) 1994-01-05 1995-02-14 At&T Corp. Article comprising a semiconductor laser that is non-degenerate with regard to polarization
KR0132018B1 (ko) 1994-01-27 1998-04-14 김만제 세원형 그레이팅 표면 방출형 레이저 다이오드
EP0668641B1 (en) 1994-02-18 2001-06-06 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, light transmitter and optical communication system using the laser
JP3263553B2 (ja) 1994-02-23 2002-03-04 キヤノン株式会社 光送信機
US5513202A (en) 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
JPH07307530A (ja) 1994-03-17 1995-11-21 Canon Inc 偏波変調可能な半導体レーザ
US5412680A (en) 1994-03-18 1995-05-02 Photonics Research Incorporated Linear polarization of semiconductor laser
US5606572A (en) 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
US5550081A (en) 1994-04-08 1996-08-27 Board Of Trustees Of The University Of Illinois Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
US5557626A (en) 1994-06-15 1996-09-17 Motorola Patterned mirror VCSEL with adjustable selective etch region
US5625729A (en) 1994-08-12 1997-04-29 Brown; Thomas G. Optoelectronic device for coupling between an external optical wave and a local optical wave for optical modulators and detectors
US5778018A (en) 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
US5892784A (en) 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate
US5892787A (en) 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
US5530715A (en) 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
US5493577A (en) 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
US5648978A (en) 1995-01-04 1997-07-15 Canon Kabushiki Kaisha Oscillation polarization mode selective semiconductor laser, modulation method therefor and optical communication system using the same
US5633527A (en) * 1995-02-06 1997-05-27 Sandia Corporation Unitary lens semiconductor device
US5568499A (en) 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5646978A (en) 1995-04-27 1997-07-08 Lucent Technologies Inc. Method and apparatus for providing interswitch handover in personal communication services systems
DE19516972C1 (de) * 1995-05-09 1996-12-12 Eos Electro Optical Syst Vorrichtung zum Herstellen eines dreidimensionalen Objektes mittels Lasersintern
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
US5598300A (en) 1995-06-05 1997-01-28 Board Of Regents, The University Of Texas System Efficient bandpass reflection and transmission filters with low sidebands based on guided-mode resonance effects
US5574738A (en) 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
US5594751A (en) * 1995-06-26 1997-01-14 Optical Concepts, Inc. Current-apertured vertical cavity laser
US5978401A (en) 1995-10-25 1999-11-02 Honeywell Inc. Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver
US5727013A (en) 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
US5727014A (en) 1995-10-31 1998-03-10 Hewlett-Packard Company Vertical-cavity surface-emitting laser generating light with a defined direction of polarization
FR2741483B1 (fr) 1995-11-21 1998-01-02 Thomson Csf Dispositif optoelectronique a puits quantiques
GB9524414D0 (en) 1995-11-29 1996-01-31 Secr Defence Low resistance contact semiconductor device
US5679963A (en) 1995-12-05 1997-10-21 Sandia Corporation Semiconductor tunnel junction with enhancement layer
US5719891A (en) 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
KR0178492B1 (ko) 1995-12-21 1999-04-15 양승택 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법
US6086263A (en) 1996-06-13 2000-07-11 3M Innovative Properties Company Active device receptacle
US5828684A (en) 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US5692083A (en) 1996-03-13 1997-11-25 The Whitaker Corporation In-line unitary optical device mount and package therefor
BE1010069A6 (nl) 1996-03-29 1997-12-02 Imec Inter Uni Micro Electr Optisch systeem met hoge reflectiviteitsrooster.
US5903590A (en) 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
US5790733A (en) 1996-06-07 1998-08-04 Minnesota Mining And Manufactouring Company Optoelectronic device receptacle and method of making same
US5726805A (en) 1996-06-25 1998-03-10 Sandia Corporation Optical filter including a sub-wavelength periodic structure and method of making
US5940422A (en) 1996-06-28 1999-08-17 Honeywell Inc. Laser with an improved mode control
US5764674A (en) * 1996-06-28 1998-06-09 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
US5818861A (en) 1996-07-19 1998-10-06 Hewlett-Packard Company Vertical cavity surface emitting laser with low band gap highly doped contact layer
US5812581A (en) * 1996-07-26 1998-09-22 Honeywell Inc. Lens for a semiconductive device with a laser and a photodetector in a common container
JP3387746B2 (ja) 1996-07-31 2003-03-17 キヤノン株式会社 屈曲チャンネルストライプの偏波変調可能な半導体レーザ
WO1998007218A1 (en) 1996-08-09 1998-02-19 W.L. Gore & Associates, Inc. Vertical cavity surface emitting laser with tunnel junction
US6075799A (en) 1996-08-28 2000-06-13 Canon Kabushiki Kaisha Polarization selective semiconductor laser, optical transmitter using the same, optical communication system using the same and fabrication method of the same
FR2753577B1 (fr) 1996-09-13 1999-01-08 Alsthom Cge Alcatel Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede
US5928188A (en) 1996-09-13 1999-07-27 Mcgary; R. Kern Method of delivering fluid with a non-reusable retractable safety syringe
US5774487A (en) 1996-10-16 1998-06-30 Honeywell Inc. Filamented multi-wavelength vertical-cavity surface emitting laser
US5838705A (en) 1996-11-04 1998-11-17 Motorola, Inc. Light emitting device having a defect inhibition layer
US5784399A (en) 1996-12-19 1998-07-21 Xerox Corporation Polarization mode selection by distributed Bragg reflector in a quantum well laser
US5978408A (en) 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US5914973A (en) * 1997-02-10 1999-06-22 Motorola, Inc. Vertical cavity surface emitting laser for high power operation and method of fabrication
US5903588A (en) 1997-03-06 1999-05-11 Honeywell Inc. Laser with a selectively changed current confining layer
US6078601A (en) 1997-03-07 2000-06-20 Smith; David F. Method for controlling the operation of a laser
FR2761822B1 (fr) 1997-04-03 1999-05-07 Alsthom Cge Alcatel Laser semiconducteur a emission de surface
US6060743A (en) 1997-05-21 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
US6055262A (en) 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability
US5917848A (en) * 1997-07-17 1999-06-29 Motorola, Inc. Vertical cavity surface emitting laser with phase shift mask
US5936266A (en) 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
US5896408A (en) 1997-08-15 1999-04-20 Hewlett-Packard Company Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets
US6154480A (en) 1997-10-02 2000-11-28 Board Of Regents, The University Of Texas System Vertical-cavity laser and laser array incorporating guided-mode resonance effects and method for making the same
US5995531A (en) 1997-11-04 1999-11-30 Motorola, Inc. VCSEL having polarization control and method of making same
US6002705A (en) 1997-12-03 1999-12-14 Xerox Corporation Wavelength and polarization multiplexed vertical cavity surface emitting lasers
US6064683A (en) 1997-12-12 2000-05-16 Honeywell Inc. Bandgap isolated light emitter
US5953362A (en) 1997-12-15 1999-09-14 Pamulapati; Jagadeesh Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same
US6490311B1 (en) 1998-04-14 2002-12-03 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6496621B1 (en) 1998-09-22 2002-12-17 Digital Optics Corp. Fiber coupler system and associated methods for reducing back reflections
US6060683A (en) * 1998-09-22 2000-05-09 Direct Radiography Corp. Selective laser removal of dielectric coating
US6185241B1 (en) 1998-10-29 2001-02-06 Xerox Corporation Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser
US6144682A (en) * 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
US6314118B1 (en) 1998-11-05 2001-11-06 Gore Enterprise Holdings, Inc. Semiconductor device with aligned oxide apertures and contact to an intervening layer
WO2000057522A1 (en) 1999-03-19 2000-09-28 Cielo Communications, Inc. Vcsel power monitoring system using plastic encapsulation techniques
US6369403B1 (en) 1999-05-27 2002-04-09 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer
US6339496B1 (en) 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
US6302596B1 (en) 1999-07-07 2001-10-16 International Business Machines Corporation Small form factor optoelectronic transceivers
US6411638B1 (en) 1999-08-31 2002-06-25 Honeywell Inc. Coupled cavity anti-guided vertical-cavity surface-emitting laser
US6212312B1 (en) 1999-09-17 2001-04-03 U.T. Battelle, Llc Optical multiplexer/demultiplexer using resonant grating filters
DE19961624B4 (de) 1999-12-13 2005-01-20 Infineon Technologies Ag Kopplungsanordnung
US6238944B1 (en) 1999-12-21 2001-05-29 Xerox Corporation Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US20020075926A1 (en) 2000-08-22 2002-06-20 Coldren Larry A. Current leveling layer integrated with aperture for intracavity device
US6650683B2 (en) 2000-11-20 2003-11-18 Fuji Xerox Co, Ltd. Surface emitting semiconductor laser
US6459709B1 (en) 2001-01-31 2002-10-01 Nova Crystals, Inc. Wavelength-tunable semiconductor laser diode
US6542531B2 (en) 2001-03-15 2003-04-01 Ecole Polytechnique Federale De Lausanne Vertical cavity surface emitting laser and a method of fabrication thereof
US6628694B2 (en) 2001-04-23 2003-09-30 Agilent Technologies, Inc. Reliability-enhancing layers for vertical cavity surface emitting lasers
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6782019B2 (en) 2001-08-16 2004-08-24 Applied Optoelectronics, Inc. VCSEL with heat-spreading layer
US6634771B2 (en) 2001-08-24 2003-10-21 Densen Cao Semiconductor light source using a primary and secondary heat sink combination
US6656756B2 (en) 2001-08-24 2003-12-02 Telecommunication Laboratories, Chunghwa Telecom Co., Ltd. Technique for a surface-emitting laser diode with a metal reflector
US6719446B2 (en) 2001-08-24 2004-04-13 Densen Cao Semiconductor light source for providing visible light to illuminate a physical space
US6634770B2 (en) 2001-08-24 2003-10-21 Densen Cao Light source using semiconductor devices mounted on a heat sink
US6746885B2 (en) 2001-08-24 2004-06-08 Densen Cao Method for making a semiconductor light source
US7224001B2 (en) 2001-08-24 2007-05-29 Densen Cao Semiconductor light source
US6515308B1 (en) 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07507183A (ja) * 1992-05-07 1995-08-03 フオトニクス　リサーチ　インコーポレーテツド 内部共振器構造をもつ垂直キャビティ・面発光レーザ
JPH1056233A (ja) * 1996-06-20 1998-02-24 Hewlett Packard Co <Hp> 高輝度単一モードｖｃｓｅｌ
JPH1075013A (ja) * 1996-07-30 1998-03-17 Hewlett Packard Co <Hp> 長波長赤外線垂直共振型面発光レーザ
JPH11274645A (ja) * 1998-03-20 1999-10-08 Toshiba Corp 半導体素子及びその製造方法
JP2000277852A (ja) * 1999-03-24 2000-10-06 Fuji Xerox Co Ltd 表面発光型半導体レーザ、及びその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JPN4007006403, Ｔ．Ｈ． Ｏｈ， ｅｔ ａｌ．, "Ｓｉｎｇｌｅ−Ｍｏｄｅ Ｏｐｅｒａｔｉｏｎ ｉｎ ａｎ Ａｎｔｉｇｕｉｄｅｄ Ｖｅｒｔｉｃａｌ−Ｃａｖｉｔｙ Ｓｕｒｆａｃｅ−Ｅｍｉｔｔｉｎｇ Ｌａｓｅｒ Ｕｓｉｎｇ ａ Ｌｏｗ−Ｔｅｍｐｅｒａｔｕｒ", Ｐｈｏｔｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｌｅｔｔｅｒｓ, 199808, Ｖｏｌ．１０， Ｎｏ．８, ｐ．１０６４−１０６６, US, ＩＥＥＥ *
JPN7008001003, Ｔ．Ｈ． Ｏｈ， ｅｔ ａｌ．, "Ｓｉｎｇｌｅ−Ｍｏｄｅ Ｏｐｅｒａｔｉｏｎ ｉｎ ａｎ Ａｎｔｉｇｕｉｄｅｄ Ｖｅｒｔｉｃａｌ−Ｃａｖｉｔｙ Ｓｕｒｆａｃｅ−Ｅｍｉｔｔｉｎｇ Ｌａｓｅｒ Ｕｓｉｎｇ ａ Ｌｏｗ−Ｔｅｍｐｅｒａｔｕｒ", Ｐｈｏｔｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｌｅｔｔｅｒｓ, 199808, Ｖｏｌ．１０， Ｎｏ．８, ｐ．１０６４−１０６６, US, ＩＥＥＥ *

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114915A (ja) * 2004-10-14 2006-04-27 Samsung Electronics Co Ltd ファンネル構造のｖｅｃｓｅｌ
JP2006351798A (ja) * 2005-06-15 2006-12-28 Fuji Xerox Co Ltd トンネル接合型面発光半導体レーザ装置およびその製造方法
US8385381B2 (en) 2005-07-04 2013-02-26 Sony Corporation Vertical cavity surface emitting laser
JP2007201398A (ja) * 2005-07-04 2007-08-09 Sony Corp 面発光型半導体レーザ
JP2010251342A (ja) * 2009-03-23 2010-11-04 Sony Corp 半導体レーザ
JP2011014793A (ja) * 2009-07-03 2011-01-20 Canon Inc 面発光レーザ、面発光レーザアレイ及び画像形成装置
JP2011060993A (ja) * 2009-09-10 2011-03-24 Canon Inc 面発光レーザおよび面発光レーザアレイ
JP2011124314A (ja) * 2009-12-09 2011-06-23 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP2011134746A (ja) * 2009-12-22 2011-07-07 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
JP2012009727A (ja) * 2010-06-28 2012-01-12 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US8842709B2 (en) 2012-08-07 2014-09-23 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser, manufacturing method for surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and information processing device
JPWO2021090670A1 (https=) * 2019-11-06 2021-05-14
WO2021090670A1 (ja) * 2019-11-06 2021-05-14 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ装置
JP7531511B2 (ja) 2019-11-06 2024-08-09 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ装置
US20220352693A1 (en) * 2021-04-30 2022-11-03 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
US12362541B2 (en) * 2021-04-30 2025-07-15 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity

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