JP2004146833A - 複数活性領域を備えた電気ポンピング式垂直共振器面発光レーザ - Google Patents
複数活性領域を備えた電気ポンピング式垂直共振器面発光レーザ Download PDFInfo
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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Abstract
【解決手段】本発明は、1対の分布型ブラッグ・レフレクタ(DBR)、DBR間に配置された光共振器、光共振器内に配置された活性領域、及び、活性領域と等しい数のp−i−n接合構造を含む、電気ポンピング式垂直共振器面発光レーザ(VCSEL)である。活性領域は、それぞれ、p−i−n接合構造の対応する1つの真性(i)層を構成している。本発明によれば、活性領域に電気的にポンピングを施し、活性領域を光共振器内における定在波の波腹に配置することが可能になる。
【選択図】図1
Description
120 分布型ブラッグ・レフレクタ
126、132、136 活性領域
150 分布型ブラッグ・レフレクタ
152 光共振器
172 電流閉じ込め領域
174 閉じ込め手段
282、286 電極
330 トンネル接合
428 n型材料
480 p型材料
493 p−i接合
494 p−i−n接合構造
495 i−n接合
Claims (10)
- 電気ポンピング式垂直共振器面発光レーザ(VCSEL)であって、
1対の分布型ブラッグ・レフレクタ(DBR)と、
前記DBR間に配置された光共振器と、
前記光共振器内に配置された活性領域と、
前記活性領域と等しい数のp−i−n接合構造を有し、
前記活性領域のそれぞれが、前記p−i−n接合構造の対応する1つの真性(i)層を構成する、VCSEL。 - 前記p−i−n接合構造を並列に接続する電極をさらに有する、請求項1に記載のVCSEL。
- 少なくとも1つのトンネル接合をさらに有する、請求項1に記載のVCSEL。
- 前記トンネル接合によって、2つのp−i−n接合構造が電気的に直列に接続される、請求項3に記載のVCSEL。
- 前記トンネル接合が、電流を閉じ込める構造になっている、請求項3に記載のVCSEL。
- 前記p−i−n接合構造のそれぞれが、p型材料、n型材料、前記p型材料と前記活性領域のうち対応する1つとの間のp−i接合、及び、前記活性領域のうち対応する1つと前記n型材料の間のi−n接合を含み、
さらに、前記p−i接合が前記n−i接合に実質的に互いに直交するよう配置される、請求項1に記載のVCSEL。 - 前記VCSELにおける光学縦モードを閉じ込めるための手段をさらに有する、請求項1に記載のVCSEL。
- 前記閉じ込め手段が、前記活性領域の少なくとも1つに隣接して配置された電流閉じ込め領域を含む、請求項7に記載のVCSEL。
- 前記活性領域のうちの隣接活性領域が、前記活性領域のうちの別の活性領域とは異なる光学利得を示すように、前記電流閉じ込め領域の少なくとも1つが構成される、請求項8に記載のVCSEL。
- 前記DBRの少なくとも1つが、VCSELの同調のために移動可能である、請求項1に記載のVCSEL。
Applications Claiming Priority (1)
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US10/278,003 US6771680B2 (en) | 2002-10-22 | 2002-10-22 | Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL) |
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JP2004146833A true JP2004146833A (ja) | 2004-05-20 |
JP2004146833A5 JP2004146833A5 (ja) | 2006-09-21 |
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JP (1) | JP2004146833A (ja) |
Cited By (13)
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JP2007158347A (ja) * | 2005-12-05 | 2007-06-21 | Osram Opto Semiconductors Gmbh | 半導体素子およびレーザデバイス |
JP2007251031A (ja) * | 2006-03-17 | 2007-09-27 | Furukawa Electric Co Ltd:The | 半導体発光素子及びその製造方法 |
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JP2009277815A (ja) * | 2008-05-14 | 2009-11-26 | Sony Corp | 半導体発光素子 |
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