JP2004528719A5 - - Google Patents
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- Publication number
- JP2004528719A5 JP2004528719A5 JP2002592201A JP2002592201A JP2004528719A5 JP 2004528719 A5 JP2004528719 A5 JP 2004528719A5 JP 2002592201 A JP2002592201 A JP 2002592201A JP 2002592201 A JP2002592201 A JP 2002592201A JP 2004528719 A5 JP2004528719 A5 JP 2004528719A5
- Authority
- JP
- Japan
- Prior art keywords
- trench
- dmos
- layer
- transistor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 25
- 229920005591 polysilicon Polymers 0.000 description 25
- 238000000034 method Methods 0.000 description 15
- 210000000746 body region Anatomy 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000006378 damage Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- -1 that is Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/862,541 | 2001-05-22 | ||
| US09/862,541 US6657256B2 (en) | 2001-05-22 | 2001-05-22 | Trench DMOS transistor having a zener diode for protection from electro-static discharge |
| PCT/US2002/016169 WO2002095836A1 (en) | 2001-05-22 | 2002-05-22 | Dmos with zener diode for esd protection |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004528719A JP2004528719A (ja) | 2004-09-16 |
| JP2004528719A5 true JP2004528719A5 (enExample) | 2006-01-05 |
| JP4975944B2 JP4975944B2 (ja) | 2012-07-11 |
Family
ID=25338718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002592201A Expired - Lifetime JP4975944B2 (ja) | 2001-05-22 | 2002-05-22 | 静電気放電保護のためのツェナーダイオードを備える二重拡散金属酸化膜半導体トランジスタ |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6657256B2 (enExample) |
| EP (1) | EP1396031A4 (enExample) |
| JP (1) | JP4975944B2 (enExample) |
| KR (1) | KR100862941B1 (enExample) |
| CN (1) | CN100399583C (enExample) |
| TW (1) | TW546845B (enExample) |
| WO (1) | WO2002095836A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6576506B2 (en) * | 2001-06-29 | 2003-06-10 | Agere Systems Inc. | Electrostatic discharge protection in double diffused MOS transistors |
| TW584935B (en) * | 2003-03-11 | 2004-04-21 | Mosel Vitelic Inc | Termination structure of DMOS device |
| DE102004026100B4 (de) * | 2004-05-25 | 2007-10-25 | Infineon Technologies Ag | ESD-Schutzstrukturen für Halbleiterbauelemente |
| JP4907862B2 (ja) * | 2004-12-10 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7544545B2 (en) * | 2005-12-28 | 2009-06-09 | Vishay-Siliconix | Trench polysilicon diode |
| JP4978014B2 (ja) * | 2006-01-30 | 2012-07-18 | サンケン電気株式会社 | 半導体発光装置及びその製造方法 |
| US20080042208A1 (en) * | 2006-08-16 | 2008-02-21 | Force Mos Technology Co., Ltd. | Trench mosfet with esd trench capacitor |
| US20080042222A1 (en) * | 2006-08-16 | 2008-02-21 | Force Mos Technology Co., Ltd. | Trench mosfet with copper metal connections |
| US7629646B2 (en) | 2006-08-16 | 2009-12-08 | Force Mos Technology Co., Ltd. | Trench MOSFET with terraced gate and manufacturing method thereof |
| JP4249774B2 (ja) * | 2006-10-13 | 2009-04-08 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| US8093621B2 (en) | 2008-12-23 | 2012-01-10 | Power Integrations, Inc. | VTS insulated gate bipolar transistor |
| JP5196794B2 (ja) | 2007-01-29 | 2013-05-15 | 三菱電機株式会社 | 半導体装置 |
| KR100827479B1 (ko) * | 2007-05-18 | 2008-05-06 | 주식회사 동부하이텍 | 반도체 소자의 정전 방지 회로 구조 및 이의 제조 방법 |
| US7825431B2 (en) * | 2007-12-31 | 2010-11-02 | Alpha & Omega Semicondictor, Ltd. | Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection |
| US20090212354A1 (en) * | 2008-02-23 | 2009-08-27 | Force Mos Technology Co. Ltd | Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortate |
| KR200449539Y1 (ko) * | 2008-05-14 | 2010-07-20 | (주)홀랜드코리아 | 투광판이 부설된 매입형 천정등 |
| US7871882B2 (en) * | 2008-12-20 | 2011-01-18 | Power Integrations, Inc. | Method of fabricating a deep trench insulated gate bipolar transistor |
| US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
| CN102074561B (zh) * | 2009-11-24 | 2013-05-29 | 力士科技股份有限公司 | 一种沟槽金属氧化物半导体场效应管及其制造方法 |
| CN101901829A (zh) * | 2010-05-07 | 2010-12-01 | 深圳深爱半导体有限公司 | 静电释放保护结构及制造方法 |
| CN102263105B (zh) * | 2010-05-26 | 2013-04-03 | 茂达电子股份有限公司 | 沟渠式半导体组件及其制作方法 |
| CN102376568B (zh) * | 2010-08-19 | 2015-08-05 | 北大方正集团有限公司 | 在深沟槽肖特基二极管晶圆的深沟槽内淀积多晶硅的方法 |
| EP2498280B1 (en) * | 2011-03-11 | 2020-04-29 | Soitec | DRAM with trench capacitors and logic back-biased transistors integrated on an SOI substrate comprising an intrinsic semiconductor layer and manufacturing method thereof |
| CN103928513B (zh) * | 2013-01-15 | 2017-03-29 | 无锡华润上华半导体有限公司 | 一种沟槽dmos器件及其制作方法 |
| US9728529B2 (en) | 2014-04-14 | 2017-08-08 | Infineon Technologies Dresden Gmbh | Semiconductor device with electrostatic discharge protection structure |
| CN105185709A (zh) * | 2014-05-28 | 2015-12-23 | 北大方正集团有限公司 | 在沟槽型vdmos中制作防静电结构的方法 |
| EP2996156A1 (en) * | 2014-09-10 | 2016-03-16 | Ipdia | Semiconductor device comprising a diode and electrostatic discharge protection device |
| CN106653842B (zh) * | 2015-10-28 | 2019-05-17 | 无锡华润上华科技有限公司 | 一种具有静电释放保护结构的半导体器件 |
| US10522674B2 (en) * | 2016-05-18 | 2019-12-31 | Rohm Co., Ltd. | Semiconductor with unified transistor structure and voltage regulator diode |
| HK1244177A2 (zh) * | 2018-03-27 | 2018-07-27 | 蒙若贤 | 用於沟道型dmos的集成堆叠在沟道中的防静电网络 |
| US11869986B2 (en) | 2021-08-27 | 2024-01-09 | Texas Instruments Incorporated | Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device |
| CN116344347B (zh) * | 2023-05-05 | 2025-10-21 | 浙江萃锦半导体有限公司 | 一种提升沟槽型sic mosfet器件开关速度的方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5072266A (en) | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
| US5100829A (en) * | 1989-08-22 | 1992-03-31 | Motorola, Inc. | Process for forming a semiconductor structure with closely coupled substrate temperature sense element |
| JPH0393265A (ja) * | 1989-09-06 | 1991-04-18 | Nissan Motor Co Ltd | 半導体集積回路 |
| JPH05335585A (ja) * | 1992-06-03 | 1993-12-17 | Fuji Electric Co Ltd | 絶縁ゲート型電力用半導体素子の製造方法 |
| US5410170A (en) | 1993-04-14 | 1995-04-25 | Siliconix Incorporated | DMOS power transistors with reduced number of contacts using integrated body-source connections |
| JP2710197B2 (ja) * | 1993-12-16 | 1998-02-10 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3400846B2 (ja) | 1994-01-20 | 2003-04-28 | 三菱電機株式会社 | トレンチ構造を有する半導体装置およびその製造方法 |
| JPH09162399A (ja) * | 1995-12-12 | 1997-06-20 | Toshiba Corp | 半導体装置 |
| US5770878A (en) * | 1996-04-10 | 1998-06-23 | Harris Corporation | Trench MOS gate device |
| US5602046A (en) | 1996-04-12 | 1997-02-11 | National Semiconductor Corporation | Integrated zener diode protection structures and fabrication methods for DMOS power devices |
| US5959345A (en) * | 1997-11-28 | 1999-09-28 | Delco Electronics Corporation | Edge termination for zener-clamped power device |
| JPH11251594A (ja) * | 1997-12-31 | 1999-09-17 | Siliconix Inc | 電圧クランプされたゲ―トを有するパワ―ｍｏｓｆｅｔ |
| US6268242B1 (en) * | 1997-12-31 | 2001-07-31 | Richard K. Williams | Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact |
| GB9818182D0 (en) * | 1998-08-21 | 1998-10-14 | Zetex Plc | Gated semiconductor device |
| JP3413569B2 (ja) * | 1998-09-16 | 2003-06-03 | 株式会社日立製作所 | 絶縁ゲート型半導体装置およびその製造方法 |
| JP2000150664A (ja) * | 1998-11-16 | 2000-05-30 | Toshiba Corp | 高耐圧半導体装置 |
| US6706604B2 (en) * | 1999-03-25 | 2004-03-16 | Hitachi, Ltd. | Method of manufacturing a trench MOS gate device |
| US6413822B2 (en) * | 1999-04-22 | 2002-07-02 | Advanced Analogic Technologies, Inc. | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer |
| US6518621B1 (en) * | 1999-09-14 | 2003-02-11 | General Semiconductor, Inc. | Trench DMOS transistor having reduced punch-through |
| US6455378B1 (en) * | 1999-10-26 | 2002-09-24 | Hitachi, Ltd. | Method of manufacturing a trench gate power transistor with a thick bottom insulator |
| JP2001352067A (ja) * | 2000-06-06 | 2001-12-21 | Sanyo Electric Co Ltd | Ｍｏｓｆｅｔの保護装置 |
| JP2002208702A (ja) * | 2001-01-10 | 2002-07-26 | Mitsubishi Electric Corp | パワー半導体装置 |
| JP4932088B2 (ja) * | 2001-02-19 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型半導体装置の製造方法 |
-
2001
- 2001-05-22 US US09/862,541 patent/US6657256B2/en not_active Expired - Lifetime
-
2002
- 2002-05-21 TW TW091110668A patent/TW546845B/zh not_active IP Right Cessation
- 2002-05-22 WO PCT/US2002/016169 patent/WO2002095836A1/en not_active Ceased
- 2002-05-22 JP JP2002592201A patent/JP4975944B2/ja not_active Expired - Lifetime
- 2002-05-22 CN CNB028104285A patent/CN100399583C/zh not_active Expired - Fee Related
- 2002-05-22 EP EP02751992A patent/EP1396031A4/en not_active Ceased
- 2002-05-22 KR KR1020037015126A patent/KR100862941B1/ko not_active Expired - Lifetime
-
2003
- 2003-11-18 US US10/714,807 patent/US6884683B2/en not_active Expired - Lifetime
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