US6803805B2
(en)
*
|
2002-04-09 |
2004-10-12 |
International Business Machines Corporation |
Distributed DC voltage generator for system on chip
|
US6876563B1
(en)
*
|
2002-12-20 |
2005-04-05 |
Cypress Semiconductor Corporation |
Method for configuring chip selects in memories
|
EP1435621B1
(en)
*
|
2002-12-30 |
2007-07-11 |
STMicroelectronics S.r.l. |
Power voltage supply distribution architecture for a plurality of memory modules
|
US7107469B2
(en)
*
|
2003-07-11 |
2006-09-12 |
International Business Machines Corporation |
Power down processing islands
|
US8429313B2
(en)
*
|
2004-05-27 |
2013-04-23 |
Sandisk Technologies Inc. |
Configurable ready/busy control
|
US7154785B2
(en)
*
|
2004-06-25 |
2006-12-26 |
Micron Technology, Inc. |
Charge pump circuitry having adjustable current outputs
|
US7205805B1
(en)
|
2004-11-02 |
2007-04-17 |
Western Digital Technologies, Inc. |
Adjusting power consumption of digital circuitry relative to critical path circuit having the largest propagation delay error
|
US7129763B1
(en)
|
2004-11-08 |
2006-10-31 |
Western Digital Technologies, Inc. |
Adjusting power consumption of digital circuitry by generating frequency error representing error in propagation delay
|
US7222248B2
(en)
*
|
2005-02-22 |
2007-05-22 |
International Business Machines Corporation |
Method of switching voltage islands in integrated circuits when a grid voltage at a reference location is within a specified range
|
US7482792B2
(en)
*
|
2005-06-14 |
2009-01-27 |
Intel Corporation |
IC with fully integrated DC-to-DC power converter
|
WO2007002531A2
(en)
*
|
2005-06-22 |
2007-01-04 |
Thunder Creative Technologies, Inc. |
Point-of-load power conditioning for memory modules
|
TWI319160B
(en)
|
2005-07-11 |
2010-01-01 |
Via Tech Inc |
Memory card capable of supporting various voltage supply and control chip and method of supporting voltage thereof
|
US7317630B2
(en)
*
|
2005-07-15 |
2008-01-08 |
Atmel Corporation |
Nonvolatile semiconductor memory apparatus
|
US7598630B2
(en)
|
2005-07-29 |
2009-10-06 |
Intel Corporation |
IC with on-die power-gating circuit
|
US20070126494A1
(en)
*
|
2005-12-06 |
2007-06-07 |
Sandisk Corporation |
Charge pump having shunt diode for improved operating efficiency
|
US20070139099A1
(en)
*
|
2005-12-16 |
2007-06-21 |
Sandisk Corporation |
Charge pump regulation control for improved power efficiency
|
US7372320B2
(en)
*
|
2005-12-16 |
2008-05-13 |
Sandisk Corporation |
Voltage regulation with active supplemental current for output stabilization
|
US7486060B1
(en)
|
2006-03-30 |
2009-02-03 |
Western Digital Technologies, Inc. |
Switching voltage regulator comprising a cycle comparator for dynamic voltage scaling
|
US20070229149A1
(en)
*
|
2006-03-30 |
2007-10-04 |
Sandisk Corporation |
Voltage regulator having high voltage protection
|
US8000134B2
(en)
|
2006-05-15 |
2011-08-16 |
Apple Inc. |
Off-die charge pump that supplies multiple flash devices
|
US7551486B2
(en)
|
2006-05-15 |
2009-06-23 |
Apple Inc. |
Iterative memory cell charging based on reference cell value
|
US7511646B2
(en)
|
2006-05-15 |
2009-03-31 |
Apple Inc. |
Use of 8-bit or higher A/D for NAND cell value
|
US7852690B2
(en)
|
2006-05-15 |
2010-12-14 |
Apple Inc. |
Multi-chip package for a flash memory
|
US7639542B2
(en)
|
2006-05-15 |
2009-12-29 |
Apple Inc. |
Maintenance operations for multi-level data storage cells
|
US7701797B2
(en)
|
2006-05-15 |
2010-04-20 |
Apple Inc. |
Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
|
US7639531B2
(en)
|
2006-05-15 |
2009-12-29 |
Apple Inc. |
Dynamic cell bit resolution
|
US7568135B2
(en)
|
2006-05-15 |
2009-07-28 |
Apple Inc. |
Use of alternative value in cell detection
|
US7613043B2
(en)
|
2006-05-15 |
2009-11-03 |
Apple Inc. |
Shifting reference values to account for voltage sag
|
US7551383B1
(en)
|
2006-06-28 |
2009-06-23 |
Western Digital Technologies, Inc. |
Adjusting voltage delivered to disk drive circuitry based on a selected zone
|
US7554311B2
(en)
*
|
2006-07-31 |
2009-06-30 |
Sandisk Corporation |
Hybrid charge pump regulation
|
US7434018B2
(en)
*
|
2006-07-31 |
2008-10-07 |
Infineon Technologies North America Corp. |
Memory system
|
US7368979B2
(en)
|
2006-09-19 |
2008-05-06 |
Sandisk Corporation |
Implementation of output floating scheme for hv charge pumps
|
TWI360129B
(en)
*
|
2006-09-29 |
2012-03-11 |
Sandisk Corp |
Method of operating a removable nonvolatile memory
|
US7675802B2
(en)
*
|
2006-09-29 |
2010-03-09 |
Sandisk Corporation |
Dual voltage flash memory card
|
US7656735B2
(en)
*
|
2006-09-29 |
2010-02-02 |
Sandisk Corporation |
Dual voltage flash memory methods
|
US7330019B1
(en)
|
2006-10-31 |
2008-02-12 |
Western Digital Technologies, Inc. |
Adjusting on-time for a discontinuous switching voltage regulator
|
US7949887B2
(en)
*
|
2006-11-01 |
2011-05-24 |
Intel Corporation |
Independent power control of processing cores
|
US8397090B2
(en)
*
|
2006-12-08 |
2013-03-12 |
Intel Corporation |
Operating integrated circuit logic blocks at independent voltages with single voltage supply
|
US7477092B2
(en)
*
|
2006-12-29 |
2009-01-13 |
Sandisk Corporation |
Unified voltage generation apparatus with improved power efficiency
|
US7440342B2
(en)
|
2006-12-29 |
2008-10-21 |
Sandisk Corporation |
Unified voltage generation method with improved power efficiency
|
US7613051B2
(en)
|
2007-03-14 |
2009-11-03 |
Apple Inc. |
Interleaving charge pumps for programmable memories
|
US7580298B2
(en)
*
|
2007-03-30 |
2009-08-25 |
Sandisk 3D Llc |
Method for managing electrical load of an electronic device
|
US7558129B2
(en)
*
|
2007-03-30 |
2009-07-07 |
Sandisk 3D Llc |
Device with load-based voltage generation
|
US7515488B2
(en)
*
|
2007-03-30 |
2009-04-07 |
Sandisk 3D Llc |
Method for load-based voltage generation
|
US7580296B2
(en)
*
|
2007-03-30 |
2009-08-25 |
Sandisk 3D Llc |
Load management for memory device
|
JP2009003991A
(ja)
*
|
2007-06-19 |
2009-01-08 |
Toshiba Corp |
半導体装置及び半導体メモリテスト装置
|
US8044705B2
(en)
*
|
2007-08-28 |
2011-10-25 |
Sandisk Technologies Inc. |
Bottom plate regulation of charge pumps
|
US7733189B1
(en)
|
2007-09-14 |
2010-06-08 |
Western Digital Technologies, Inc. |
Oscillator comprising foldover detection
|
US7586363B2
(en)
*
|
2007-12-12 |
2009-09-08 |
Sandisk Corporation |
Diode connected regulation of charge pumps
|
US7586362B2
(en)
*
|
2007-12-12 |
2009-09-08 |
Sandisk Corporation |
Low voltage charge pump with regulation
|
JP2009146499A
(ja)
*
|
2007-12-13 |
2009-07-02 |
Toshiba Corp |
不揮発性メモリカード
|
US7813212B2
(en)
*
|
2008-01-17 |
2010-10-12 |
Mosaid Technologies Incorporated |
Nonvolatile memory having non-power of two memory capacity
|
US20090302930A1
(en)
*
|
2008-06-09 |
2009-12-10 |
Feng Pan |
Charge Pump with Vt Cancellation Through Parallel Structure
|
US7969235B2
(en)
|
2008-06-09 |
2011-06-28 |
Sandisk Corporation |
Self-adaptive multi-stage charge pump
|
US8085020B1
(en)
|
2008-06-13 |
2011-12-27 |
Western Digital Technologies, Inc. |
Switching voltage regulator employing dynamic voltage scaling with hysteretic comparator
|
US8710907B2
(en)
*
|
2008-06-24 |
2014-04-29 |
Sandisk Technologies Inc. |
Clock generator circuit for a charge pump
|
US7683700B2
(en)
|
2008-06-25 |
2010-03-23 |
Sandisk Corporation |
Techniques of ripple reduction for charge pumps
|
KR20100011292A
(ko)
*
|
2008-07-24 |
2010-02-03 |
삼성전자주식회사 |
수직 스트링 상변화 메모리 소자
|
KR100956780B1
(ko)
*
|
2008-09-09 |
2010-05-12 |
주식회사 하이닉스반도체 |
펌핑전압 발생 장치
|
US8031549B2
(en)
*
|
2008-09-19 |
2011-10-04 |
Freescale Semiconductor, Inc. |
Integrated circuit having boosted array voltage and method therefor
|
CN102187400A
(zh)
*
|
2008-10-20 |
2011-09-14 |
国立大学法人东京大学 |
集成电路装置
|
US7795952B2
(en)
*
|
2008-12-17 |
2010-09-14 |
Sandisk Corporation |
Regulation of recovery rates in charge pumps
|
US7973592B2
(en)
*
|
2009-07-21 |
2011-07-05 |
Sandisk Corporation |
Charge pump with current based regulation
|
US8339183B2
(en)
*
|
2009-07-24 |
2012-12-25 |
Sandisk Technologies Inc. |
Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
|
US8782452B2
(en)
|
2009-07-27 |
2014-07-15 |
Hewlett-Packard Development Company, L.P. |
Method and system for power-efficient and non-signal-degrading voltage regulation in memory subsystems
|
US8582374B2
(en)
*
|
2009-12-15 |
2013-11-12 |
Intel Corporation |
Method and apparatus for dynamically adjusting voltage reference to optimize an I/O system
|
US20110148509A1
(en)
*
|
2009-12-17 |
2011-06-23 |
Feng Pan |
Techniques to Reduce Charge Pump Overshoot
|
JP5596143B2
(ja)
|
2010-06-29 |
2014-09-24 |
パナソニック株式会社 |
不揮発性記憶システム、メモリシステム用の電源回路、フラッシュメモリ、フラッシュメモリコントローラ、および不揮発性半導体記憶装置
|
US8937404B1
(en)
|
2010-08-23 |
2015-01-20 |
Western Digital Technologies, Inc. |
Data storage device comprising dual mode independent/parallel voltage regulators
|
US8339185B2
(en)
|
2010-12-20 |
2012-12-25 |
Sandisk 3D Llc |
Charge pump system that dynamically selects number of active stages
|
US8294509B2
(en)
|
2010-12-20 |
2012-10-23 |
Sandisk Technologies Inc. |
Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
|
US8621258B2
(en)
*
|
2011-07-18 |
2013-12-31 |
Maishi Electronic (Shanghai) Ltd. |
Device for operating two memory cards in two sockets with different pin arrangements
|
US20130042063A1
(en)
*
|
2011-08-08 |
2013-02-14 |
Chi Mei Communication Systems, Inc. |
System and method for controlling dual memory cards
|
US8699247B2
(en)
|
2011-09-09 |
2014-04-15 |
Sandisk Technologies Inc. |
Charge pump system dynamically reconfigurable for read and program
|
US8514628B2
(en)
|
2011-09-22 |
2013-08-20 |
Sandisk Technologies Inc. |
Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
|
US8400212B1
(en)
|
2011-09-22 |
2013-03-19 |
Sandisk Technologies Inc. |
High voltage charge pump regulation system with fine step adjustment
|
US8710909B2
(en)
|
2012-09-14 |
2014-04-29 |
Sandisk Technologies Inc. |
Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
|
US8836412B2
(en)
|
2013-02-11 |
2014-09-16 |
Sandisk 3D Llc |
Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
|
US8981835B2
(en)
|
2013-06-18 |
2015-03-17 |
Sandisk Technologies Inc. |
Efficient voltage doubler
|
US9024680B2
(en)
|
2013-06-24 |
2015-05-05 |
Sandisk Technologies Inc. |
Efficiency for charge pumps with low supply voltages
|
US9077238B2
(en)
|
2013-06-25 |
2015-07-07 |
SanDisk Technologies, Inc. |
Capacitive regulation of charge pumps without refresh operation interruption
|
US9007046B2
(en)
|
2013-06-27 |
2015-04-14 |
Sandisk Technologies Inc. |
Efficient high voltage bias regulation circuit
|
US9083231B2
(en)
|
2013-09-30 |
2015-07-14 |
Sandisk Technologies Inc. |
Amplitude modulation for pass gate to improve charge pump efficiency
|
US9154027B2
(en)
|
2013-12-09 |
2015-10-06 |
Sandisk Technologies Inc. |
Dynamic load matching charge pump for reduced current consumption
|
US9671855B2
(en)
*
|
2014-06-30 |
2017-06-06 |
Micron Technology, Inc. |
Apparatuses and methods of entering unselected memories into a different power mode during multi-memory operation
|
US9917507B2
(en)
|
2015-05-28 |
2018-03-13 |
Sandisk Technologies Llc |
Dynamic clock period modulation scheme for variable charge pump load currents
|
US9647536B2
(en)
|
2015-07-28 |
2017-05-09 |
Sandisk Technologies Llc |
High voltage generation using low voltage devices
|
US9520776B1
(en)
|
2015-09-18 |
2016-12-13 |
Sandisk Technologies Llc |
Selective body bias for charge pump transfer switches
|
KR102430865B1
(ko)
|
2015-10-02 |
2022-08-10 |
삼성전자주식회사 |
멀티 메모리 다이 구조에서 외부 파워에 대한 피크 전류 감소 기능을 갖는 반도체 메모리 장치
|
KR20170062635A
(ko)
*
|
2015-11-27 |
2017-06-08 |
삼성전자주식회사 |
멀티 메모리 다이 구조에서 피크 전류 감소 기능을 갖는 반도체 메모리 장치
|
US10331575B2
(en)
*
|
2017-04-11 |
2019-06-25 |
Integrated Silicon Solution, Inc. |
Secured chip enable with chip disable
|
JP6482690B1
(ja)
*
|
2018-01-11 |
2019-03-13 |
ウィンボンド エレクトロニクス コーポレーション |
半導体記憶装置
|
US10852807B2
(en)
*
|
2018-02-01 |
2020-12-01 |
Microsoft Technology Licensing, Llc |
Hybrid powering off of storage component memory cells
|
JP6535784B1
(ja)
*
|
2018-04-25 |
2019-06-26 |
ウィンボンド エレクトロニクス コーポレーション |
半導体記憶装置
|
US10775424B2
(en)
*
|
2018-08-31 |
2020-09-15 |
Micron Technology, Inc. |
Capacitive voltage divider for monitoring multiple memory components
|
US10796773B1
(en)
*
|
2019-05-14 |
2020-10-06 |
Micron Technolgy, Inc. |
Memory devices including voltage generation systems
|