CN101882464B - 用于自刷新模式的存储器装置控制 - Google Patents
用于自刷新模式的存储器装置控制 Download PDFInfo
- Publication number
- CN101882464B CN101882464B CN201010171270.0A CN201010171270A CN101882464B CN 101882464 B CN101882464 B CN 101882464B CN 201010171270 A CN201010171270 A CN 201010171270A CN 101882464 B CN101882464 B CN 101882464B
- Authority
- CN
- China
- Prior art keywords
- cke
- memory controller
- power module
- storage arrangement
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 claims description 24
- 230000009977 dual effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 102100036725 Epithelial discoidin domain-containing receptor 1 Human genes 0.000 description 2
- 101710131668 Epithelial discoidin domain-containing receptor 1 Proteins 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3206—Monitoring of events, devices or parameters that trigger a change in power modality
- G06F1/3215—Monitoring of peripheral devices
- G06F1/3225—Monitoring of peripheral devices of memory devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
- G11C5/144—Detection of predetermined disconnection or reduction of power supply, e.g. power down or power standby
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4067—Refresh in standby or low power modes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Memory System (AREA)
- Power Sources (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/431,876 US7869300B2 (en) | 2009-04-29 | 2009-04-29 | Memory device control for self-refresh mode |
US12/431,876 | 2009-04-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101882464A CN101882464A (zh) | 2010-11-10 |
CN101882464B true CN101882464B (zh) | 2013-10-30 |
Family
ID=42226108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010171270.0A Expired - Fee Related CN101882464B (zh) | 2009-04-29 | 2010-04-28 | 用于自刷新模式的存储器装置控制 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7869300B2 (zh) |
EP (1) | EP2246769A1 (zh) |
JP (1) | JP5590605B2 (zh) |
KR (1) | KR20100118950A (zh) |
CN (1) | CN101882464B (zh) |
TW (1) | TWI527030B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012115839A1 (en) | 2011-02-23 | 2012-08-30 | Rambus Inc. | Protocol for memory power-mode control |
US9159397B2 (en) | 2012-12-04 | 2015-10-13 | Micron Technology, Inc. | Methods and apparatuses for refreshing memory |
JP2014146115A (ja) * | 2013-01-28 | 2014-08-14 | Canon Inc | データ処理装置およびその制御方法 |
US10055370B2 (en) * | 2014-07-09 | 2018-08-21 | Advanced Micro Devices, Inc. | Method and apparatis for processor standby |
US9142280B1 (en) | 2014-08-06 | 2015-09-22 | Freescale Semiconducotr, Inc. | Circuit for configuring external memory |
JP6712312B2 (ja) * | 2015-08-24 | 2020-06-17 | エスアールシー ラボス、エルエルシー | メモリモジュールまたはサブシステムと併置されたデータメンテナンスブロックを組み込んだdramメモリコントローラを用いて再構成可能なデバイスを再プログラミングする場合にdramデータを保持するシステムおよび方法 |
JP6516630B2 (ja) * | 2015-08-26 | 2019-05-22 | キヤノン株式会社 | メモリ制御回路及びその制御方法 |
KR102535182B1 (ko) | 2016-07-27 | 2023-05-23 | 에스케이하이닉스 주식회사 | 반도체 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1574082A (zh) * | 2003-05-23 | 2005-02-02 | 海力士半导体有限公司 | 用于控制同步半导体存储装置中自我刷新操作的控制设备 |
CN1744001A (zh) * | 2004-08-31 | 2006-03-08 | 佳能株式会社 | 数据存储装置及其控制方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5831467A (en) * | 1991-11-05 | 1998-11-03 | Monolithic System Technology, Inc. | Termination circuit with power-down mode for use in circuit module architecture |
US6564329B1 (en) * | 1999-03-16 | 2003-05-13 | Linkup Systems Corporation | System and method for dynamic clock generation |
US6829677B1 (en) * | 2000-05-18 | 2004-12-07 | International Business Machines Corporation | Method and apparatus for preserving the contents of synchronous DRAM through system reset |
TW588235B (en) * | 2001-04-02 | 2004-05-21 | Via Tech Inc | Motherboard with less power consumption |
JP3799251B2 (ja) * | 2001-08-24 | 2006-07-19 | エルピーダメモリ株式会社 | メモリデバイス及びメモリシステム |
KR100502664B1 (ko) * | 2003-04-29 | 2005-07-20 | 주식회사 하이닉스반도체 | 온 다이 터미네이션 모드 전환 회로 및 그방법 |
KR100528164B1 (ko) * | 2004-02-13 | 2005-11-15 | 주식회사 하이닉스반도체 | 반도체 기억 소자에서의 온 다이 터미네이션 모드 전환회로 및 그 방법 |
US7164611B2 (en) * | 2004-10-26 | 2007-01-16 | Micron Technology, Inc. | Data retention kill function |
JP4775141B2 (ja) * | 2005-09-29 | 2011-09-21 | 株式会社ハイニックスセミコンダクター | 遅延固定ループ回路 |
DE102006036822A1 (de) * | 2006-08-07 | 2008-02-14 | Qimonda Ag | Verfahren zum Betrieb eines Speichermoduls und Speichermodul |
KR100866601B1 (ko) * | 2006-12-04 | 2008-11-03 | 삼성전자주식회사 | 반도체 장치의 종단 저항을 제어할 수 있는 장치 및 방법 |
JP2008217890A (ja) * | 2007-03-02 | 2008-09-18 | Ricoh Co Ltd | 電子装置、画像処理装置及び電源供給制御方法 |
US7729191B2 (en) * | 2007-09-06 | 2010-06-01 | Micron Technology, Inc. | Memory device command decoding system and memory device and processor-based system using same |
JP5200692B2 (ja) * | 2007-09-14 | 2013-06-05 | 株式会社リコー | データ処理装置、データ処理装置の電圧制御方法及び画像形成装置 |
US7715264B2 (en) * | 2008-06-24 | 2010-05-11 | Qimonda North America Corp. | Method and apparatus for selectively disabling termination circuitry |
-
2009
- 2009-04-29 US US12/431,876 patent/US7869300B2/en active Active
-
2010
- 2010-03-24 TW TW099108749A patent/TWI527030B/zh not_active IP Right Cessation
- 2010-03-29 EP EP10158253A patent/EP2246769A1/en not_active Withdrawn
- 2010-04-26 JP JP2010100474A patent/JP5590605B2/ja not_active Expired - Fee Related
- 2010-04-28 CN CN201010171270.0A patent/CN101882464B/zh not_active Expired - Fee Related
- 2010-04-28 KR KR1020100039348A patent/KR20100118950A/ko not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1574082A (zh) * | 2003-05-23 | 2005-02-02 | 海力士半导体有限公司 | 用于控制同步半导体存储装置中自我刷新操作的控制设备 |
CN1744001A (zh) * | 2004-08-31 | 2006-03-08 | 佳能株式会社 | 数据存储装置及其控制方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201044391A (en) | 2010-12-16 |
JP2010262645A (ja) | 2010-11-18 |
CN101882464A (zh) | 2010-11-10 |
US7869300B2 (en) | 2011-01-11 |
US20100278000A1 (en) | 2010-11-04 |
EP2246769A1 (en) | 2010-11-03 |
KR20100118950A (ko) | 2010-11-08 |
TWI527030B (zh) | 2016-03-21 |
JP5590605B2 (ja) | 2014-09-17 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) CORPORAT Free format text: FORMER OWNER: INFINEON TECHNOLOGIES CORP. Effective date: 20150806 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150806 Address after: Singapore Singapore Patentee after: Avago Technologies General IP (Singapore) Pte. Ltd. Address before: California, USA Patentee before: LSI Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20181022 Address after: Singapore Singapore Patentee after: Avago Technologies General IP (Singapore) Pte. Ltd. Address before: Singapore Singapore Patentee before: Avago Technologies General IP (Singapore) Pte. Ltd. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131030 Termination date: 20200428 |
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CF01 | Termination of patent right due to non-payment of annual fee |