JP2004523653A5 - - Google Patents

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Publication number
JP2004523653A5
JP2004523653A5 JP2002564069A JP2002564069A JP2004523653A5 JP 2004523653 A5 JP2004523653 A5 JP 2004523653A5 JP 2002564069 A JP2002564069 A JP 2002564069A JP 2002564069 A JP2002564069 A JP 2002564069A JP 2004523653 A5 JP2004523653 A5 JP 2004523653A5
Authority
JP
Japan
Prior art keywords
refractory metal
consumed
sputtering target
powder
tantalum sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002564069A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004523653A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2002/004306 external-priority patent/WO2002064287A2/en
Publication of JP2004523653A publication Critical patent/JP2004523653A/ja
Publication of JP2004523653A5 publication Critical patent/JP2004523653A5/ja
Pending legal-status Critical Current

Links

JP2002564069A 2001-02-14 2002-02-14 耐火性金属の再生 Pending JP2004523653A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26874201P 2001-02-14 2001-02-14
PCT/US2002/004306 WO2002064287A2 (en) 2001-02-14 2002-02-14 Rejuvenation of refractory metal products

Publications (2)

Publication Number Publication Date
JP2004523653A JP2004523653A (ja) 2004-08-05
JP2004523653A5 true JP2004523653A5 (enExample) 2005-12-22

Family

ID=23024267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002564069A Pending JP2004523653A (ja) 2001-02-14 2002-02-14 耐火性金属の再生

Country Status (24)

Country Link
US (1) US20020112955A1 (enExample)
EP (1) EP1362132B1 (enExample)
JP (1) JP2004523653A (enExample)
CN (1) CN1221684C (enExample)
AT (1) ATE325906T1 (enExample)
AU (1) AU2002250075B2 (enExample)
BG (1) BG64959B1 (enExample)
BR (1) BR0207202A (enExample)
CA (1) CA2437713A1 (enExample)
CZ (1) CZ20032186A3 (enExample)
DE (1) DE60211309T2 (enExample)
DK (1) DK1362132T3 (enExample)
ES (1) ES2261656T3 (enExample)
HU (1) HUP0400730A2 (enExample)
IS (1) IS6911A (enExample)
MX (1) MXPA03007293A (enExample)
NO (1) NO20033567L (enExample)
NZ (1) NZ527503A (enExample)
PL (1) PL363521A1 (enExample)
PT (1) PT1362132E (enExample)
RU (1) RU2304633C2 (enExample)
SK (1) SK10062003A3 (enExample)
WO (1) WO2002064287A2 (enExample)
ZA (1) ZA200306259B (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7175802B2 (en) * 2001-09-17 2007-02-13 Heraeus, Inc. Refurbishing spent sputtering targets
NZ534237A (en) * 2002-01-24 2006-01-27 Starck H C Inc Refractory metal and alloy refining by laser forming and melting
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
US20040065546A1 (en) * 2002-10-04 2004-04-08 Michaluk Christopher A. Method to recover spent components of a sputter target
US7504008B2 (en) * 2004-03-12 2009-03-17 Applied Materials, Inc. Refurbishment of sputtering targets
US20060021870A1 (en) * 2004-07-27 2006-02-02 Applied Materials, Inc. Profile detection and refurbishment of deposition targets
US20060081459A1 (en) * 2004-10-18 2006-04-20 Applied Materials, Inc. In-situ monitoring of target erosion
US8802191B2 (en) 2005-05-05 2014-08-12 H. C. Starck Gmbh Method for coating a substrate surface and coated product
AU2006243448B2 (en) 2005-05-05 2011-09-01 H.C. Starck Inc. Coating process for manufacture or reprocessing of sputter targets and X-ray anodes
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
JPWO2007052743A1 (ja) * 2005-11-07 2009-04-30 株式会社東芝 スパッタリングターゲットおよびその製造方法
DE102005055255A1 (de) * 2005-11-19 2007-05-31 Applied Materials Gmbh & Co. Kg Verfahren zum Herstellen eines Targets
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) * 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
CN101779266A (zh) * 2007-08-08 2010-07-14 皇家飞利浦电子股份有限公司 用于将材料涂抹到x射线源的阳极表面的方法和装置、阳极以及x射线源
US8699667B2 (en) * 2007-10-02 2014-04-15 General Electric Company Apparatus for x-ray generation and method of making same
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
FR2953747B1 (fr) * 2009-12-14 2012-03-23 Snecma Procede de reparation d'une aube en titane par rechargement laser et compression hip moderee
DE102010004241A1 (de) * 2010-01-08 2011-07-14 H.C. Starck GmbH, 38642 Verfahren zur Herstellung von Funktionsschichten auf der Oberfläche von Werkstücken, eine so hergestellte Funktionsschicht und ein Werkstück
WO2013049274A2 (en) 2011-09-29 2013-04-04 H.C. Starck, Inc. Large-area sputtering targets and methods of manufacturing large-area sputtering targets
JP6532219B2 (ja) * 2013-11-25 2019-06-19 株式会社フルヤ金属 スパッタリングターゲットの再生方法及び再生スパッタリングターゲット
AT14301U1 (de) * 2014-07-09 2015-07-15 Plansee Se Verfahren zur Herstellung eines Bauteils
CN104439239B (zh) * 2014-11-06 2017-05-03 金堆城钼业股份有限公司 一种重复利用中频感应烧结炉钨钼废发热体的方法
DE102015008921A1 (de) * 2015-07-15 2017-01-19 Evobeam GmbH Verfahren zur additiven Herstellung von Bauteilen
CN107614744B (zh) * 2015-12-28 2020-04-24 Jx金属株式会社 溅射靶的制造方法
CN105618753A (zh) * 2016-03-03 2016-06-01 中研智能装备有限公司 一种轧辊等离子3d打印再制造设备及再制造方法
DE102016121951A1 (de) * 2016-11-15 2018-05-17 Cl Schutzrechtsverwaltungs Gmbh Vorrichtung zur additiven Herstellung dreidimensionaler Objekte
JP6650141B1 (ja) * 2019-01-10 2020-02-19 株式会社ティー・オール 使用済み成膜用ターゲットの充填式再生方法
CA3130828A1 (en) * 2019-02-22 2020-08-27 Oerlikon Surface Solutions Ag, Pfaffikon Method for producing targets for physical vapor deposition (pvd)
CN110523987B (zh) * 2019-09-27 2021-02-05 华中科技大学 一种用于致密材料制备的激光烧结同步压制增材制造系统
CN111940745B (zh) * 2019-12-30 2024-01-19 宁夏东方钽业股份有限公司 大松装冶金级钽粉的制造方法
CN112522698B (zh) * 2020-11-26 2023-04-25 江苏科技大学 一种超声振动辅助激光熔覆钨钽铌合金装置及方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1494559A1 (ru) * 1986-05-28 1996-03-10 Ярославское научно-производственное объединение ЭЛЕКТРОНПРИБОР" Способ изготовления мишени для распыления в вакууме
US5643472A (en) * 1988-07-08 1997-07-01 Cauldron Limited Partnership Selective removal of material by irradiation
WO1996036746A1 (fr) * 1995-05-18 1996-11-21 Asahi Glass Company Ltd. Procede de production d'une cible de pulverisation
DE19626732B4 (de) * 1996-07-03 2009-01-29 W.C. Heraeus Gmbh Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
DE19925330A1 (de) * 1999-06-02 2000-12-07 Leybold Materials Gmbh Verfahren zur Herstellung oder zum Recyceln von Sputtertargets

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