JP2004349687A5 - - Google Patents
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- JP2004349687A5 JP2004349687A5 JP2004123262A JP2004123262A JP2004349687A5 JP 2004349687 A5 JP2004349687 A5 JP 2004349687A5 JP 2004123262 A JP2004123262 A JP 2004123262A JP 2004123262 A JP2004123262 A JP 2004123262A JP 2004349687 A5 JP2004349687 A5 JP 2004349687A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- metal layers
- metal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 229910052751 metal Inorganic materials 0.000 claims 15
- 239000002184 metal Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 10
- 229910052786 argon Inorganic materials 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 4
- 239000011261 inert gas Substances 0.000 claims 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 2
- 229910000914 Mn alloy Inorganic materials 0.000 claims 2
- 230000005290 antiferromagnetic effect Effects 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 230000005291 magnetic effect Effects 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 229910003321 CoFe Inorganic materials 0.000 claims 1
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 claims 1
- 229910000599 Cr alloy Inorganic materials 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 239000000788 chromium alloy Substances 0.000 claims 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 claims 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 claims 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/418,449 US6841484B2 (en) | 2003-04-17 | 2003-04-17 | Method of fabricating a magneto-resistive random access memory (MRAM) device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004349687A JP2004349687A (ja) | 2004-12-09 |
| JP2004349687A5 true JP2004349687A5 (enExample) | 2007-05-31 |
Family
ID=32908356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004123262A Withdrawn JP2004349687A (ja) | 2003-04-17 | 2004-04-19 | 抗磁ランダムアクセスメモリ（ｍｒａｍ）装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6841484B2 (enExample) |
| EP (1) | EP1469511A2 (enExample) |
| JP (1) | JP2004349687A (enExample) |
| KR (1) | KR20040090928A (enExample) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6942813B2 (en) * | 2003-03-05 | 2005-09-13 | Applied Materials, Inc. | Method of etching magnetic and ferroelectric materials using a pulsed bias source |
| US20040226911A1 (en) * | 2003-04-24 | 2004-11-18 | David Dutton | Low-temperature etching environment |
| US20050186690A1 (en) * | 2004-02-25 | 2005-08-25 | Megic Corporation | Method for improving semiconductor wafer test accuracy |
| US7153780B2 (en) * | 2004-03-24 | 2006-12-26 | Intel Corporation | Method and apparatus for self-aligned MOS patterning |
| CN100438115C (zh) * | 2004-12-02 | 2008-11-26 | 北京科技大学 | 一种具有高磁电阻效应的磁性隧道结 |
| US7265404B2 (en) * | 2005-08-30 | 2007-09-04 | Magic Technologies, Inc. | Bottom conductor for integrated MRAM |
| US7635546B2 (en) * | 2006-09-15 | 2009-12-22 | Applied Materials, Inc. | Phase shifting photomask and a method of fabricating thereof |
| JP4978292B2 (ja) * | 2007-04-19 | 2012-07-18 | 東ソー株式会社 | ルテニウムのエッチング用組成物の除害方法 |
| US9136463B2 (en) * | 2007-11-20 | 2015-09-15 | Qualcomm Incorporated | Method of forming a magnetic tunnel junction structure |
| JPWO2010026703A1 (ja) * | 2008-09-02 | 2012-01-26 | キヤノンアネルバ株式会社 | 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体 |
| JPWO2010026704A1 (ja) * | 2008-09-04 | 2012-01-26 | キヤノンアネルバ株式会社 | 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体 |
| JPWO2010029701A1 (ja) * | 2008-09-09 | 2012-02-02 | キヤノンアネルバ株式会社 | 磁気抵抗素子とその製造方法、該製造方法に用いる記憶媒体 |
| JPWO2010064564A1 (ja) * | 2008-12-01 | 2012-05-10 | キヤノンアネルバ株式会社 | 磁気抵抗素子、その製造方法、および該製造方法に用いる記憶媒体 |
| US20100304504A1 (en) * | 2009-05-27 | 2010-12-02 | Canon Anelva Corporation | Process and apparatus for fabricating magnetic device |
| JP2010283095A (ja) * | 2009-06-04 | 2010-12-16 | Hitachi Ltd | 半導体装置の製造方法 |
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US8912012B2 (en) | 2009-11-25 | 2014-12-16 | Qualcomm Incorporated | Magnetic tunnel junction device and fabrication |
| JP5587911B2 (ja) * | 2009-12-08 | 2014-09-10 | 株式会社アルバック | 積層電極の加工方法 |
| US9105569B2 (en) | 2010-08-19 | 2015-08-11 | Iii Holdings 1, Llc | Method of etching MTJ using CO process chemistries |
| US8211801B2 (en) | 2010-09-02 | 2012-07-03 | United Microelectronics Corp. | Method of fabricating complementary metal-oxide-semiconductor (CMOS) device |
| KR20120058113A (ko) | 2010-11-29 | 2012-06-07 | 삼성전자주식회사 | 자기 터널 접합 구조체의 제조 방법 및 이를 이용하는 자기 메모리 소자의 제조 방법 |
| US8642457B2 (en) | 2011-03-03 | 2014-02-04 | United Microelectronics Corp. | Method of fabricating semiconductor device |
| US8501634B2 (en) | 2011-03-10 | 2013-08-06 | United Microelectronics Corp. | Method for fabricating gate structure |
| US8519487B2 (en) | 2011-03-21 | 2013-08-27 | United Microelectronics Corp. | Semiconductor device |
| US8324118B2 (en) | 2011-03-28 | 2012-12-04 | United Microelectronics Corp. | Manufacturing method of metal gate structure |
| US8921238B2 (en) | 2011-09-19 | 2014-12-30 | United Microelectronics Corp. | Method for processing high-k dielectric layer |
| US8426277B2 (en) | 2011-09-23 | 2013-04-23 | United Microelectronics Corp. | Semiconductor process |
| US9000568B2 (en) | 2011-09-26 | 2015-04-07 | United Microelectronics Corp. | Semiconductor structure and fabrication method thereof |
| US8802579B2 (en) | 2011-10-12 | 2014-08-12 | United Microelectronics Corp. | Semiconductor structure and fabrication method thereof |
| US8440511B1 (en) | 2011-11-16 | 2013-05-14 | United Microelectronics Corp. | Method for manufacturing multi-gate transistor device |
| US8987096B2 (en) | 2012-02-07 | 2015-03-24 | United Microelectronics Corp. | Semiconductor process |
| US9478627B2 (en) | 2012-05-18 | 2016-10-25 | United Microelectronics Corp. | Semiconductor structure and process thereof |
| KR20140013201A (ko) * | 2012-07-20 | 2014-02-05 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US8501636B1 (en) | 2012-07-24 | 2013-08-06 | United Microelectronics Corp. | Method for fabricating silicon dioxide layer |
| US9117878B2 (en) | 2012-12-11 | 2015-08-25 | United Microelectronics Corp. | Method for manufacturing shallow trench isolation |
| US8951884B1 (en) | 2013-11-14 | 2015-02-10 | United Microelectronics Corp. | Method for forming a FinFET structure |
| JP6285322B2 (ja) * | 2014-08-26 | 2018-02-28 | 東京エレクトロン株式会社 | 被処理体をエッチングする方法 |
| US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
| US9806252B2 (en) * | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| US9870899B2 (en) * | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
| US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
| US10236442B2 (en) | 2015-10-15 | 2019-03-19 | Samsung Electronics Co., Ltd. | Methods of forming an interconnection line and methods of fabricating a magnetic memory device using the same |
| CN106676532B (zh) * | 2015-11-10 | 2019-04-05 | 江苏鲁汶仪器有限公司 | 金属刻蚀装置及方法 |
| US9397287B1 (en) | 2015-12-29 | 2016-07-19 | International Business Machines Corporation | Magnetic tunnel junction with post-deposition hydrogenation |
| US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US9837312B1 (en) | 2016-07-22 | 2017-12-05 | Lam Research Corporation | Atomic layer etching for enhanced bottom-up feature fill |
| US10858727B2 (en) | 2016-08-19 | 2020-12-08 | Applied Materials, Inc. | High density, low stress amorphous carbon film, and process and equipment for its deposition |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
| US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US9997371B1 (en) | 2017-04-24 | 2018-06-12 | Lam Research Corporation | Atomic layer etch methods and hardware for patterning applications |
| WO2018231695A1 (en) * | 2017-06-13 | 2018-12-20 | Tokyo Electron Limited | Process for patterning a magnetic tunnel junction |
| WO2019190781A1 (en) | 2018-03-30 | 2019-10-03 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4105805A (en) | 1976-12-29 | 1978-08-08 | The United States Of America As Represented By The Secretary Of The Army | Formation of metal nitride oxide semiconductor (MNOS) by ion implantation of oxygen through a silicon nitride layer |
| US4874723A (en) | 1987-07-16 | 1989-10-17 | Texas Instruments Incorporated | Selective etching of tungsten by remote and in situ plasma generation |
| US5248636A (en) | 1987-07-16 | 1993-09-28 | Texas Instruments Incorporated | Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation |
| US4906328A (en) | 1987-07-16 | 1990-03-06 | Texas Instruments Incorporated | Method for wafer treating |
| US4985113A (en) | 1989-03-10 | 1991-01-15 | Hitachi, Ltd. | Sample treating method and apparatus |
| US5691246A (en) | 1993-05-13 | 1997-11-25 | Micron Technology, Inc. | In situ etch process for insulating and conductive materials |
| US5976986A (en) | 1996-08-06 | 1999-11-02 | International Business Machines Corp. | Low pressure and low power C12 /HC1 process for sub-micron metal etching |
| US6133145A (en) * | 1998-10-09 | 2000-10-17 | Taiwan Semiconductor Manufacturing Company | Method to increase the etch rate selectivity between metal and photoresist via use of a plasma treatment |
| US6162733A (en) * | 1999-01-15 | 2000-12-19 | Lucent Technologies Inc. | Method for removing contaminants from integrated circuits |
| US6374833B1 (en) * | 1999-05-05 | 2002-04-23 | Mosel Vitelic, Inc. | Method of in situ reactive gas plasma treatment |
-
2003
- 2003-04-17 US US10/418,449 patent/US6841484B2/en not_active Expired - Fee Related
-
2004
- 2004-04-16 EP EP04009158A patent/EP1469511A2/en not_active Withdrawn
- 2004-04-17 KR KR1020040026404A patent/KR20040090928A/ko not_active Withdrawn
- 2004-04-19 JP JP2004123262A patent/JP2004349687A/ja not_active Withdrawn
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