JP2004241778A5 - - Google Patents

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Publication number
JP2004241778A5
JP2004241778A5 JP2004027067A JP2004027067A JP2004241778A5 JP 2004241778 A5 JP2004241778 A5 JP 2004241778A5 JP 2004027067 A JP2004027067 A JP 2004027067A JP 2004027067 A JP2004027067 A JP 2004027067A JP 2004241778 A5 JP2004241778 A5 JP 2004241778A5
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JP
Japan
Prior art keywords
region
intermediate layer
forming
conduction band
energy level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004027067A
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English (en)
Japanese (ja)
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JP2004241778A (ja
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Publication date
Priority claimed from US10/358,369 external-priority patent/US6822274B2/en
Application filed filed Critical
Publication of JP2004241778A publication Critical patent/JP2004241778A/ja
Publication of JP2004241778A5 publication Critical patent/JP2004241778A5/ja
Pending legal-status Critical Current

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JP2004027067A 2003-02-03 2004-02-03 中間層を含む半導体ヘテロ接合 Pending JP2004241778A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/358,369 US6822274B2 (en) 2003-02-03 2003-02-03 Heterojunction semiconductor device having an intermediate layer for providing an improved junction

Publications (2)

Publication Number Publication Date
JP2004241778A JP2004241778A (ja) 2004-08-26
JP2004241778A5 true JP2004241778A5 (enExample) 2007-03-22

Family

ID=32655628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004027067A Pending JP2004241778A (ja) 2003-02-03 2004-02-03 中間層を含む半導体ヘテロ接合

Country Status (3)

Country Link
US (1) US6822274B2 (enExample)
EP (1) EP1443565A3 (enExample)
JP (1) JP2004241778A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207583A (ja) * 2002-12-26 2004-07-22 Sony Corp 半導体装置
TWM253058U (en) * 2003-09-05 2004-12-11 Visual Photonics Epitaxy Co Lt Heterogeneous junction dipole transistor structure for adjusting on voltage of base and emitter
US6992337B2 (en) * 2004-04-02 2006-01-31 Agilent Technologies, Inc. Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability
JP4575378B2 (ja) * 2004-07-01 2010-11-04 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ
FR2878078B1 (fr) * 2004-11-18 2007-01-19 Cit Alcatel Transistor bipolaire et procede de fabrication de ce transistor
TWI244768B (en) * 2005-04-08 2005-12-01 South Epitaxy Corp Photodetector
US7462892B2 (en) * 2005-07-26 2008-12-09 Sony Corporation Semiconductor device
JP5446532B2 (ja) * 2009-07-14 2014-03-19 富士通株式会社 化合物半導体装置及びその製造方法
CN102646703B (zh) * 2012-05-07 2014-12-10 中国电子科技集团公司第五十五研究所 单晶InP基化合物半导体材料薄膜的外延结构
JP2014120503A (ja) * 2012-12-13 2014-06-30 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタ
US20160169833A1 (en) * 2014-12-11 2016-06-16 International Business Machines Corporation Biosensor based on heterojunction bipolar transistor
TWI643337B (zh) * 2017-10-17 2018-12-01 全新光電科技股份有限公司 具有能隙漸變的電洞阻隔層之異質接面雙極性電晶體結構
CN118888577B (zh) * 2024-09-30 2025-01-10 苏州晶歌半导体有限公司 双异质结双极性晶体管

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5442194A (en) * 1994-01-07 1995-08-15 Texas Instruments Incorporated Room-temperature tunneling hot-electron transistor
JPH08148670A (ja) * 1994-11-24 1996-06-07 Honda Motor Co Ltd 半導体装置
EP0715357A1 (en) * 1994-11-30 1996-06-05 Rockwell International Corporation Carbon-doped GaAsSb semiconductor
JPH1092835A (ja) * 1996-09-10 1998-04-10 Toshiba Corp バイポーラトランジスタ
JP2001068790A (ja) * 1999-08-27 2001-03-16 Canon Inc 半導体レーザ構造
US6696710B2 (en) * 2001-02-27 2004-02-24 Agilent Technologies, Inc. Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
JP2002343802A (ja) * 2001-05-16 2002-11-29 Hitachi Ltd 半導体装置およびそれを搭載した電子装置

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