JP2004241778A - 中間層を含む半導体ヘテロ接合 - Google Patents

中間層を含む半導体ヘテロ接合 Download PDF

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Publication number
JP2004241778A
JP2004241778A JP2004027067A JP2004027067A JP2004241778A JP 2004241778 A JP2004241778 A JP 2004241778A JP 2004027067 A JP2004027067 A JP 2004027067A JP 2004027067 A JP2004027067 A JP 2004027067A JP 2004241778 A JP2004241778 A JP 2004241778A
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Japan
Prior art keywords
region
intermediate layer
inalas
inp
gaassb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004027067A
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English (en)
Japanese (ja)
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JP2004241778A5 (enExample
Inventor
Sung Soo Yi
ソン・スー・イ
Nicolas J Moll
ニコラス・ジェイ・モル
Dave Bour
デイヴ・ブーア
Hans G Rohdin
ハンス・ジー・ローディン
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Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2004241778A publication Critical patent/JP2004241778A/ja
Publication of JP2004241778A5 publication Critical patent/JP2004241778A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

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  • Bipolar Transistors (AREA)
JP2004027067A 2003-02-03 2004-02-03 中間層を含む半導体ヘテロ接合 Pending JP2004241778A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/358,369 US6822274B2 (en) 2003-02-03 2003-02-03 Heterojunction semiconductor device having an intermediate layer for providing an improved junction

Publications (2)

Publication Number Publication Date
JP2004241778A true JP2004241778A (ja) 2004-08-26
JP2004241778A5 JP2004241778A5 (enExample) 2007-03-22

Family

ID=32655628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004027067A Pending JP2004241778A (ja) 2003-02-03 2004-02-03 中間層を含む半導体ヘテロ接合

Country Status (3)

Country Link
US (1) US6822274B2 (enExample)
EP (1) EP1443565A3 (enExample)
JP (1) JP2004241778A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006003845A1 (ja) * 2004-07-01 2008-04-10 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ
JP2011023480A (ja) * 2009-07-14 2011-02-03 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2014120503A (ja) * 2012-12-13 2014-06-30 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタ

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207583A (ja) * 2002-12-26 2004-07-22 Sony Corp 半導体装置
TWM253058U (en) * 2003-09-05 2004-12-11 Visual Photonics Epitaxy Co Lt Heterogeneous junction dipole transistor structure for adjusting on voltage of base and emitter
US6992337B2 (en) * 2004-04-02 2006-01-31 Agilent Technologies, Inc. Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability
FR2878078B1 (fr) * 2004-11-18 2007-01-19 Cit Alcatel Transistor bipolaire et procede de fabrication de ce transistor
TWI244768B (en) * 2005-04-08 2005-12-01 South Epitaxy Corp Photodetector
US7462892B2 (en) * 2005-07-26 2008-12-09 Sony Corporation Semiconductor device
CN102646703B (zh) * 2012-05-07 2014-12-10 中国电子科技集团公司第五十五研究所 单晶InP基化合物半导体材料薄膜的外延结构
US20160169833A1 (en) * 2014-12-11 2016-06-16 International Business Machines Corporation Biosensor based on heterojunction bipolar transistor
TWI643337B (zh) * 2017-10-17 2018-12-01 全新光電科技股份有限公司 具有能隙漸變的電洞阻隔層之異質接面雙極性電晶體結構
CN118888577B (zh) * 2024-09-30 2025-01-10 苏州晶歌半导体有限公司 双异质结双极性晶体管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283392A (ja) * 1994-01-06 1995-10-27 Texas Instr Inc <Ti> 室温動作トンネル・ホット電子トランジスタ
JPH08148670A (ja) * 1994-11-24 1996-06-07 Honda Motor Co Ltd 半導体装置
JPH1092835A (ja) * 1996-09-10 1998-04-10 Toshiba Corp バイポーラトランジスタ
JP2001068790A (ja) * 1999-08-27 2001-03-16 Canon Inc 半導体レーザ構造
JP2002343802A (ja) * 2001-05-16 2002-11-29 Hitachi Ltd 半導体装置およびそれを搭載した電子装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715357A1 (en) * 1994-11-30 1996-06-05 Rockwell International Corporation Carbon-doped GaAsSb semiconductor
US6696710B2 (en) * 2001-02-27 2004-02-24 Agilent Technologies, Inc. Heterojunction bipolar transistor (HBT) having an improved emitter-base junction

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07283392A (ja) * 1994-01-06 1995-10-27 Texas Instr Inc <Ti> 室温動作トンネル・ホット電子トランジスタ
JPH08148670A (ja) * 1994-11-24 1996-06-07 Honda Motor Co Ltd 半導体装置
JPH1092835A (ja) * 1996-09-10 1998-04-10 Toshiba Corp バイポーラトランジスタ
JP2001068790A (ja) * 1999-08-27 2001-03-16 Canon Inc 半導体レーザ構造
JP2002343802A (ja) * 2001-05-16 2002-11-29 Hitachi Ltd 半導体装置およびそれを搭載した電子装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006003845A1 (ja) * 2004-07-01 2008-04-10 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ
JP4575378B2 (ja) * 2004-07-01 2010-11-04 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ
JP2011023480A (ja) * 2009-07-14 2011-02-03 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2014120503A (ja) * 2012-12-13 2014-06-30 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタ

Also Published As

Publication number Publication date
US20040149994A1 (en) 2004-08-05
EP1443565A2 (en) 2004-08-04
US6822274B2 (en) 2004-11-23
EP1443565A3 (en) 2005-07-13

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