JP2004235623A5 - - Google Patents

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Publication number
JP2004235623A5
JP2004235623A5 JP2004001536A JP2004001536A JP2004235623A5 JP 2004235623 A5 JP2004235623 A5 JP 2004235623A5 JP 2004001536 A JP2004001536 A JP 2004001536A JP 2004001536 A JP2004001536 A JP 2004001536A JP 2004235623 A5 JP2004235623 A5 JP 2004235623A5
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JP
Japan
Prior art keywords
substrate
plasma processing
processed
ring member
processing apparatus
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JP2004001536A
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English (en)
Japanese (ja)
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JP2004235623A (ja
JP4421305B2 (ja
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Priority to JP2004001536A priority Critical patent/JP4421305B2/ja
Priority claimed from JP2004001536A external-priority patent/JP4421305B2/ja
Publication of JP2004235623A publication Critical patent/JP2004235623A/ja
Publication of JP2004235623A5 publication Critical patent/JP2004235623A5/ja
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Publication of JP4421305B2 publication Critical patent/JP4421305B2/ja
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JP2004001536A 2003-01-07 2004-01-07 プラズマ処理装置及びプラズマ処理方法 Expired - Fee Related JP4421305B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004001536A JP4421305B2 (ja) 2003-01-07 2004-01-07 プラズマ処理装置及びプラズマ処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003001547 2003-01-07
JP2004001536A JP4421305B2 (ja) 2003-01-07 2004-01-07 プラズマ処理装置及びプラズマ処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009083608A Division JP5079729B2 (ja) 2003-01-07 2009-03-30 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2004235623A JP2004235623A (ja) 2004-08-19
JP2004235623A5 true JP2004235623A5 (https=) 2007-02-22
JP4421305B2 JP4421305B2 (ja) 2010-02-24

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Family Applications (2)

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JP2004001536A Expired - Fee Related JP4421305B2 (ja) 2003-01-07 2004-01-07 プラズマ処理装置及びプラズマ処理方法
JP2009083608A Expired - Fee Related JP5079729B2 (ja) 2003-01-07 2009-03-30 プラズマ処理装置

Family Applications After (1)

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JP2009083608A Expired - Fee Related JP5079729B2 (ja) 2003-01-07 2009-03-30 プラズマ処理装置

Country Status (5)

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US (2) US7850174B2 (https=)
JP (2) JP4421305B2 (https=)
KR (1) KR100657054B1 (https=)
CN (2) CN101996843B (https=)
TW (1) TW200416801A (https=)

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JP5503503B2 (ja) 2010-11-09 2014-05-28 東京エレクトロン株式会社 プラズマ処理装置
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
CN103165494B (zh) * 2011-12-08 2015-12-09 中微半导体设备(上海)有限公司 一种清洁晶片背面聚合物的装置和方法
CN102522305B (zh) * 2011-12-27 2015-01-07 中微半导体设备(上海)有限公司 等离子体处理装置及聚焦环组件
CN103187232B (zh) * 2011-12-28 2015-09-16 中微半导体设备(上海)有限公司 一种减少晶片背面生成聚合物的聚焦环
KR20140101996A (ko) * 2013-02-13 2014-08-21 삼성전자주식회사 기판 지지유닛 및 이를 구비한 플라즈마 식각장치
CN103646841B (zh) * 2013-11-22 2016-01-27 上海华力微电子有限公司 一种等离子体刻蚀设备
JP5615454B1 (ja) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 フォーカスリング
CN105097630A (zh) * 2014-05-14 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 承载装置以及等离子刻蚀设备
CN105575863B (zh) * 2014-11-10 2019-02-22 中微半导体设备(上海)有限公司 等离子体处理装置、基片卸载装置及方法
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US20170002465A1 (en) * 2015-06-30 2017-01-05 Lam Research Corporation Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
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US10910195B2 (en) * 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
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CN110402481B (zh) * 2017-10-17 2023-07-21 株式会社爱发科 被处理体的处理装置
JP7101055B2 (ja) * 2018-06-12 2022-07-14 東京エレクトロン株式会社 静電チャック、フォーカスリング、支持台、プラズマ処理装置、及びプラズマ処理方法
JP7105666B2 (ja) 2018-09-26 2022-07-25 東京エレクトロン株式会社 プラズマ処理装置
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