JP2004213011A - 多重ドメイン液晶表示装置用薄膜トランジスタ表示板 - Google Patents
多重ドメイン液晶表示装置用薄膜トランジスタ表示板 Download PDFInfo
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
Abstract
【課題】 本発明は、製造工程が単純で、安定した多重ドメインを形成する液晶表示装置を提供することを目的とする。
【解決手段】 ゲート線とデータ線が交差して定義する画素領域内に切開部を有する第1及び第2画素電極が形成されており、これら二つの画素電極の切開部と重複する方位制御電極が形成されている。方位制御電極はゲート線及びデータ線と連結されている薄膜トランジスタと連結されており、方位制御電極と第1画素電極との間で形成される静電容量より方位制御電極と第2画素電極の間で形成される静電容量の大きさが所定値大きくなるようにこれらの重畳面積を調節する。このようにすれば、ドメインの安定性が向上され、一つの画素領域内に互いに異なる電圧が印加される二つの画素電極を形成することで、側面視認性を向上させることができる。
【選択図】 図1
Description
Vdce=Vd1+[−C3×Vd1+(C2+C3)Vd2+C2×Vd3]/(C2+C3)
C1=Clca+Cst+(Cdceb×Clcb)/(Cdceb+Clcb)
C2=Cdcea
C3=Cdc
ここで、各トランジスタT1、T2、T3に印加される電圧は、それぞれVd1、Vd2及び−Vd3である。
Vdce=Vd1+[−C3×Vd1+C2×Vd3]/(C2+C3)
C1=Clca+Cst+(Cdceb×Clcb)/(Cdceb+Clcb)
C2=Cdcea
C3=Cdc
第5の実施例は、図10のように、第2画素電極用薄膜トランジスタT3のソース電極が接地されていることが第3の実施例と異なる。ソース電極を接地させることは、ソース電極を維持電極線に連結することで可能となる。このためには、保護膜とゲート絶縁膜を貫通して、維持電極線を露出する接触孔と保護膜を貫通してソース電極を露出する接触孔を通じて両者を連結するソース電極連結部を保護膜上に形成することが必要である。
Vdce=Vd1+[−C3×Vd1+(C2+C3)×Vd2)]/(C2+C3)
C1=Clca+Cst+(Cdceb×Clcb)/(Cdceb+Clcb)
C2=Cdcea
C3=Cdc
図11は本発明の第6の実施例による液晶表示装置用薄膜トランジスタ表示板の配置図であり、図12は本発明の第6の実施例による液晶表示装置回路図である。
Vdce=(C1+C3)[(2−C3/C2)Vd1+Vd2]/2C2+C1
C1=Clca+Cst+(Cdceb×Clcb)/(Cdceb+Clcb)
C2=Cdcea
C3=Cdc
第3乃至第6の実施例による液晶表示装置では、結合電極176を利用して第1画素電極190aと第2画素電極190bを容量性で結合する。しかし、方位制御電極178を利用して第1画素電極190aと第2画素電極190bを容量性で結合することもできる。以下、その方法について説明する。
Vdce=Vd1+[−C3×Vd1+(C2+C3)Vd2+C2×Vd3]/(C2+C3)
C1=Clca+Cst
C2=Cdcea
C3=Cdc+(Cdceb×Clcb)/(Cdceb+Clcb)
一方、方位制御電極178、178a、178bの電圧をVdce、第2画素電極190bの電圧をVbとすれば、図14で、電圧分配法則によりVb=Vdce×Cdceb/(Cdceb+Clcb)となる。このように、一つの画素領域内に異なる電圧の二つの画素電極を配置することで、二つの画素電極が互いに補償し側面視認性を向上させる。
Vdce=Vd1+[−C3×Vd1+C2×Vd3]/(C2+C3)
C1=Clca+Cst
C2=Cdcea
C3=Cdc+(Cdceb×Clcb)/(Cdceb+Clcb)
第9の実施例は、図16のように、第2画素電極用薄膜トランジスタT3のソース電極が接地されていることが第7の実施例と異なる。ソース電極を接地させることは、ソース電極を維持電極線に連結することで可能となる。このためには、保護膜とゲート絶縁膜を貫通して維持電極線を露出する接触孔と保護膜を貫通してソース電極を露出する接触孔を通じて両者を連結するソース電極連結部を保護膜上に形成することが必要である。
Vdce=Vd1+[−C3×Vd1+(C2+C3)Vd2)]/(C2+C3)
C1=Clca+Cst
C2=Cdcea
C3=Cdc+(Cdceb×Clcb)/(Cdceb+Clcb)
図17は本発明の第10の実施例による液晶表示装置用薄膜トランジスタ表示板の配置図であり、図18は本発明の第10の実施例による液晶表示装置回路図である。第10の実施例による液晶表示装置用薄膜トランジスタ表示板は、第2画素電極用薄膜トランジスタが省略されたことが第7の実施例と異なり、それ以外の構造は同様である。
Vdce=(C1+C3)[(2−C3/C2)Vd1+Vd2]/(2C2+C1)
C1=Clca+Cst
C2=Cdcea
C3=Cdc+(Cdceb×Clcb)/(Cdceb+Clcb)
以上、本発明の好ましい実施例について詳細に説明したが、本発明の権利範囲はこれに限定されず、請求の範囲で定義している本発明の基本概念を利用した当業者の多様な変形及び改良形態も本発明の権利範囲に属するものである。
110、210 基板
121 ゲート線
123c ゲート電極
140 ゲート絶縁膜
151、154c 半導体層
171 データ線
173c ソース電極
175c ドレーン電極
176 結合電極
178 方位制御電極
180 保護膜
190a、190b 画素電極
191、192a、192b、194a、194b、195a、195b切開部
230 色フィルター
270 共通電極
Claims (12)
- 絶縁基板、
前記絶縁基板上に形成されている第1配線、
前記絶縁基板上に形成され、前記第1配線と絶縁されて交差している第2配線、
前記第1配線と前記第2配線が交差して定義する画素領域ごとに形成されており、切開部によって複数の小部分に分割されている第1及び第2画素電極、
前記第1配線と前記第2配線が交差して定義される画素領域ごとに形成され、前記第1及び第2画素電極の切開部のうち少なくとも一部と重畳する部分を有する方位制御電極と、
前記方位制御電極、前記第1配線及び前記第2配線に3端子が各々連結されている方位制御電極用薄膜トランジスタ、を含む薄膜トランジスタ表示板。 - 前記第1画素電極、前記第1配線及び前記第2配線に3端子が各々連結されている第1画素電極用薄膜トランジスタをさらに含む請求項1に記載の薄膜トランジスタ表示板。
- 前記第2画素電極、前記第1配線及び前記第2配線に3端子が各々連結されている第2画素電極用薄膜トランジスタをさらに含む請求項2に記載の薄膜トランジスタ表示板。
- 前記第1画素電極用薄膜トランジスタは、次段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記第2画素電極用薄膜トランジスタは、前段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記方位制御電極用薄膜トランジスタは、前段の前記第1配線、前段の前記第2配線及び前記方位制御電極と連結されている請求項3に記載の薄膜トランジスタ表示板。 - 前記第2配線と絶縁されて交差している第3配線をさらに含む請求項3に記載の薄膜トランジスタ表示板。
- 前記第1画素電極用薄膜トランジスタは、次段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記第2画素電極用薄膜トランジスタは、前段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記方位制御電極用薄膜トランジスタは、前段の前記第1配線、前記第3配線及び前記方位制御電極と連結されている請求項5に記載の薄膜トランジスタ表示板。 - 前記第1画素電極用薄膜トランジスタは、次段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記第2画素電極用薄膜トランジスタは、前段の前記第1配線、前記第3配線及び前記第1画素電極と連結されており、
前記方位制御電極用薄膜トランジスタは、前段の前記第1配線、前段の前記第2配線及び前記方位制御電極と連結されている請求項5に記載の薄膜トランジスタ表示板。 - 前記方位制御電極は前記第1画素電極の切開部とのみ重畳しており、前記第1画素電極に連結され、前記第2画素電極の切開部と重複する結合電極をさらに含む請求項1に記載の薄膜トランジスタ表示板。
- 前記方位制御電極は、前記第1画素電極の切開部及び前記第2画素電極の切開部と重畳している請求項1に記載の薄膜トランジスタ表示板。
- 前記第2画素電極の切開部は、前記第2画素電極を上下に両分する横方向切開部と横方向切開部を中心にして反転対称をなす第1斜線方向切開部を有し、前記第1画素電極は、前記横方向切開部を中心にして反転対称をなす第2斜線方向切開部を有する請求項1に記載の薄膜トランジスタ表示板。
- 前記第1及び第2画素電極は、前記横方位切開部を中心にして反転対称をなす請求項10に記載の薄膜トランジスタ表示板。
- 前記第2配線と絶縁されて交差しており、前記第1画素電極と前記第2画素電極との間に配置されている電極を有する第3配線をさらに含む請求項10に記載の薄膜トランジスタ表示板。
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JP2010044419A (ja) | 2010-02-25 |
JP5350191B2 (ja) | 2013-11-27 |
US20060001604A1 (en) | 2006-01-05 |
US6936845B2 (en) | 2005-08-30 |
US7427972B2 (en) | 2008-09-23 |
KR20040062752A (ko) | 2004-07-09 |
US20040135147A1 (en) | 2004-07-15 |
KR100961941B1 (ko) | 2010-06-08 |
JP4452513B2 (ja) | 2010-04-21 |
TW200426479A (en) | 2004-12-01 |
USRE44166E1 (en) | 2013-04-23 |
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