JP4452513B2 - 多重ドメイン液晶表示装置用薄膜トランジスタ表示板 - Google Patents
多重ドメイン液晶表示装置用薄膜トランジスタ表示板 Download PDFInfo
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- JP4452513B2 JP4452513B2 JP2004000026A JP2004000026A JP4452513B2 JP 4452513 B2 JP4452513 B2 JP 4452513B2 JP 2004000026 A JP2004000026 A JP 2004000026A JP 2004000026 A JP2004000026 A JP 2004000026A JP 4452513 B2 JP4452513 B2 JP 4452513B2
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- 239000010409 thin film Substances 0.000 title claims description 84
- 239000004973 liquid crystal related substance Substances 0.000 title description 86
- 239000000758 substrate Substances 0.000 claims description 21
- 239000010408 film Substances 0.000 description 32
- 238000003860 storage Methods 0.000 description 21
- 230000005684 electric field Effects 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 19
- 230000008878 coupling Effects 0.000 description 16
- 238000010168 coupling process Methods 0.000 description 16
- 238000005859 coupling reaction Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134336—Matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
- G02F1/134354—Subdivided pixels, e.g. for grey scale or redundancy the sub-pixels being capacitively coupled
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
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- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
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- Spectroscopy & Molecular Physics (AREA)
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Description
Vdce=Vd1+[−C3×Vd1+(C2+C3)Vd2+C2×Vd3]/(C2+C3)
C1=Clca+Cst+(Cdceb×Clcb)/(Cdceb+Clcb)
C2=Cdcea
C3=Cdc
ここで、各トランジスタT1、T2、T3に印加される電圧は、それぞれVd1、Vd2及び−Vd3である。
Vdce=Vd1+[−C3×Vd1+C2×Vd3]/(C2+C3)
C1=Clca+Cst+(Cdceb×Clcb)/(Cdceb+Clcb)
C2=Cdcea
C3=Cdc
第5の実施例は、図10のように、第2画素電極用薄膜トランジスタT3のソース電極が接地されていることが第3の実施例と異なる。ソース電極を接地させることは、ソース電極を維持電極線に連結することで可能となる。このためには、保護膜とゲート絶縁膜を貫通して、維持電極線を露出する接触孔と保護膜を貫通してソース電極を露出する接触孔を通じて両者を連結するソース電極連結部を保護膜上に形成することが必要である。
Vdce=Vd1+[−C3×Vd1+(C2+C3)×Vd2)]/(C2+C3)
C1=Clca+Cst+(Cdceb×Clcb)/(Cdceb+Clcb)
C2=Cdcea
C3=Cdc
図11は本発明の第6の実施例による液晶表示装置用薄膜トランジスタ表示板の配置図であり、図12は本発明の第6の実施例による液晶表示装置回路図である。
Vdce=(C1+C3)[(2−C3/C2)Vd1+Vd2]/2C2+C1
C1=Clca+Cst+(Cdceb×Clcb)/(Cdceb+Clcb)
C2=Cdcea
C3=Cdc
第3乃至第6の実施例による液晶表示装置では、結合電極176を利用して第1画素電極190aと第2画素電極190bを容量性で結合する。しかし、方位制御電極178を利用して第1画素電極190aと第2画素電極190bを容量性で結合することもできる。以下、その方法について説明する。
Vdce=Vd1+[−C3×Vd1+(C2+C3)Vd2+C2×Vd3]/(C2+C3)
C1=Clca+Cst
C2=Cdcea
C3=Cdc+(Cdceb×Clcb)/(Cdceb+Clcb)
一方、方位制御電極178、178a、178bの電圧をVdce、第2画素電極190bの電圧をVbとすれば、図14で、電圧分配法則によりVb=Vdce×Cdceb/(Cdceb+Clcb)となる。このように、一つの画素領域内に異なる電圧の二つの画素電極を配置することで、二つの画素電極が互いに補償し側面視認性を向上させる。
Vdce=Vd1+[−C3×Vd1+C2×Vd3]/(C2+C3)
C1=Clca+Cst
C2=Cdcea
C3=Cdc+(Cdceb×Clcb)/(Cdceb+Clcb)
第9の実施例は、図16のように、第2画素電極用薄膜トランジスタT3のソース電極が接地されていることが第7の実施例と異なる。ソース電極を接地させることは、ソース電極を維持電極線に連結することで可能となる。このためには、保護膜とゲート絶縁膜を貫通して維持電極線を露出する接触孔と保護膜を貫通してソース電極を露出する接触孔を通じて両者を連結するソース電極連結部を保護膜上に形成することが必要である。
Vdce=Vd1+[−C3×Vd1+(C2+C3)Vd2)]/(C2+C3)
C1=Clca+Cst
C2=Cdcea
C3=Cdc+(Cdceb×Clcb)/(Cdceb+Clcb)
図17は本発明の第10の実施例による液晶表示装置用薄膜トランジスタ表示板の配置図であり、図18は本発明の第10の実施例による液晶表示装置回路図である。第10の実施例による液晶表示装置用薄膜トランジスタ表示板は、第2画素電極用薄膜トランジスタが省略されたことが第7の実施例と異なり、それ以外の構造は同様である。
Vdce=(C1+C3)[(2−C3/C2)Vd1+Vd2]/(2C2+C1)
C1=Clca+Cst
C2=Cdcea
C3=Cdc+(Cdceb×Clcb)/(Cdceb+Clcb)
以上、本発明の好ましい実施例について詳細に説明したが、本発明の権利範囲はこれに限定されず、請求の範囲で定義している本発明の基本概念を利用した当業者の多様な変形及び改良形態も本発明の権利範囲に属するものである。
110、210 基板
121 ゲート線
123c ゲート電極
140 ゲート絶縁膜
151、154c 半導体層
171 データ線
173c ソース電極
175c ドレーン電極
176 結合電極
178 方位制御電極
180 保護膜
190a、190b 画素電極
191、192a、192b、194a、194b、195a、195b切開部
230 色フィルター
270 共通電極
Claims (11)
- 絶縁基板、
前記絶縁基板上に形成されている第1配線、
前記絶縁基板上に形成され、前記第1配線と絶縁されて交差している第2配線、
前記第1配線と前記第2配線が交差して定義する画素領域ごとに形成され、切開部によって複数の小部分に分割されている第1及び第2画素電極、
前記第1配線と前記第2配線が交差して定義される画素領域ごとに形成され、前記第1及び第2画素電極の切開部の少なくとも一部と重畳する部分を有するとともに、前記第1及び第2画素電極の一部と重畳する方位制御電極と、
前記方位制御電極、前記第1配線及び前記第2配線に3端子が各々連結されている方位制御電極用薄膜トランジスタを含み、
第1画素電極と第2画素電極が形成される層は、方位制御電極が形成される層と異なる薄膜トランジスタ表示板。 - 前記第1画素電極、前記第1配線及び前記第2配線に3端子が各々連結されている第1画素電極用薄膜トランジスタをさらに含む請求項1に記載の薄膜トランジスタ表示板。
- 前記第2画素電極、前記第1配線及び前記第2配線に3端子が各々連結されている第2画素電極用薄膜トランジスタをさらに含む請求項2に記載の薄膜トランジスタ表示板。
- 前記第1画素電極用薄膜トランジスタは、次段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記第2画素電極用薄膜トランジスタは、前段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記方位制御電極用薄膜トランジスタは、前段の前記第1配線、前段の前記第2配線及び前記方位制御電極と連結されている請求項3に記載の薄膜トランジスタ表示板。 - 前記第2配線と絶縁されて交差している第3配線をさらに含む請求項3に記載の薄膜トランジスタ表示板。
- 前記第1画素電極用薄膜トランジスタは、次段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記第2画素電極用薄膜トランジスタは、前段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記方位制御電極用薄膜トランジスタは、前段の前記第1配線、前記第3配線及び前記方位制御電極と連結されている請求項5に記載の薄膜トランジスタ表示板。 - 前記第1画素電極用薄膜トランジスタは、次段の前記第1配線、次段の前記第2配線及び前記第1画素電極と連結されており、
前記第2画素電極用薄膜トランジスタは、前段の前記第1配線、前記第3配線及び前記第1画素電極と連結されており、
前記方位制御電極用薄膜トランジスタは、前段の前記第1配線、前段の前記第2配線及び前記方位制御電極と連結されている請求項5に記載の薄膜トランジスタ表示板。 - 前記方位制御電極は、前記第1画素電極の切開部及び前記第2画素電極の切開部と重畳している請求項1に記載の薄膜トランジスタ表示板。
- 前記第2画素電極の切開部は、前記第2画素電極を上下に両分する横方向切開部と横方向切開部を中心にして反転対称をなす第1斜線方向切開部を有し、前記第1画素電極は、前記横方向切開部を中心にして反転対称をなす第2斜線方向切開部を有する請求項1に記載の薄膜トランジスタ表示板。
- 前記第1及び第2画素電極は、前記横方向切開部を中心にして反転対称をなす請求項9に記載の薄膜トランジスタ表示板。
- 前記第2配線と絶縁されて交差しており、前記第1画素電極と前記第2画素電極との間に配置されている電極を有する第3配線をさらに含む請求項9に記載の薄膜トランジスタ表示板。
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KR1020030000266A KR100961941B1 (ko) | 2003-01-03 | 2003-01-03 | 다중 도메인 액정 표시 장치용 박막 트랜지스터 표시판 |
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JP4452513B2 true JP4452513B2 (ja) | 2010-04-21 |
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JP2004000026A Expired - Lifetime JP4452513B2 (ja) | 2003-01-03 | 2004-01-05 | 多重ドメイン液晶表示装置用薄膜トランジスタ表示板 |
JP2009261896A Expired - Lifetime JP5350191B2 (ja) | 2003-01-03 | 2009-11-17 | 多重ドメイン液晶表示装置用薄膜トランジスタ表示板 |
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US (3) | US6936845B2 (ja) |
JP (2) | JP4452513B2 (ja) |
KR (1) | KR100961941B1 (ja) |
TW (1) | TWI354849B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004272259A (ja) * | 2003-03-06 | 2004-09-30 | Samsung Electronics Co Ltd | 液晶表示装置 |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100870005B1 (ko) * | 2002-03-07 | 2008-11-21 | 삼성전자주식회사 | 액정 표시 장치 |
KR100878241B1 (ko) * | 2002-09-27 | 2009-01-13 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치용 박막 트랜지스터 기판 |
KR100961941B1 (ko) | 2003-01-03 | 2010-06-08 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치용 박막 트랜지스터 표시판 |
KR20040105934A (ko) * | 2003-06-10 | 2004-12-17 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 및 그에 사용되는 표시판 |
KR20050014414A (ko) * | 2003-07-31 | 2005-02-07 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 |
US20050078253A1 (en) * | 2003-08-04 | 2005-04-14 | Hee-Seop Kim | Liquid crystal display and thin film transistor array panel therefor |
KR101006436B1 (ko) * | 2003-11-18 | 2011-01-06 | 삼성전자주식회사 | 표시 장치용 박막 트랜지스터 표시판 |
KR101026810B1 (ko) * | 2003-12-30 | 2011-04-04 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 |
KR101189267B1 (ko) | 2004-12-03 | 2012-10-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 액정 표시 장치 |
TWI379113B (en) * | 2004-07-07 | 2012-12-11 | Samsung Display Co Ltd | Array substrate, manufacturing method thereof and display device having the same |
KR101112539B1 (ko) | 2004-07-27 | 2012-02-15 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 및 그에 사용되는 표시판 |
KR101061848B1 (ko) * | 2004-09-09 | 2011-09-02 | 삼성전자주식회사 | 박막 트랜지스터 패널 및 이를 포함하는 다중 도메인 액정표시 장치 |
KR101189266B1 (ko) | 2004-09-24 | 2012-10-09 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR100846951B1 (ko) * | 2004-09-30 | 2008-07-17 | 샤프 가부시키가이샤 | 액정 표시 장치 |
KR101112540B1 (ko) * | 2004-10-25 | 2012-03-13 | 삼성전자주식회사 | 다중 도메인 박막 트랜지스터 표시판 |
TWI338796B (en) | 2004-10-29 | 2011-03-11 | Chimei Innolux Corp | Multi-domain vertically alignmentliquid crystal display panel |
KR101197044B1 (ko) | 2004-12-02 | 2012-11-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR101112544B1 (ko) * | 2004-12-03 | 2012-03-13 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR20060067292A (ko) * | 2004-12-14 | 2006-06-20 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 수리 방법 |
KR20060073826A (ko) * | 2004-12-24 | 2006-06-29 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
KR101240646B1 (ko) * | 2005-09-07 | 2013-03-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
TWI399598B (zh) * | 2004-12-27 | 2013-06-21 | Samsung Display Co Ltd | 液晶顯示器 |
KR101133760B1 (ko) | 2005-01-17 | 2012-04-09 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
JP4738000B2 (ja) | 2005-01-19 | 2011-08-03 | シャープ株式会社 | 液晶表示装置 |
US7262634B2 (en) * | 2005-01-19 | 2007-08-28 | Altera Corporation | Methods of reducing power in programmable logic devices using low voltage swing for routing signals |
JP4658622B2 (ja) * | 2005-01-19 | 2011-03-23 | シャープ株式会社 | 液晶表示装置用基板及び液晶表示装置 |
JP5143362B2 (ja) * | 2005-02-07 | 2013-02-13 | 三星電子株式会社 | 液晶表示装置 |
KR101240642B1 (ko) | 2005-02-11 | 2013-03-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
WO2006098247A1 (ja) | 2005-03-15 | 2006-09-21 | Sharp Kabushiki Kaisha | 表示装置、表示装置の調整方法、画像表示モニター、及びテレビジョン受像機 |
KR101188601B1 (ko) | 2005-04-13 | 2012-10-08 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN1333295C (zh) * | 2005-04-14 | 2007-08-22 | 友达光电股份有限公司 | 适用于广视角液晶显示器的像素结构 |
KR20060114742A (ko) * | 2005-05-02 | 2006-11-08 | 삼성전자주식회사 | 액정표시장치 및 그 제조방법 |
JP4728045B2 (ja) * | 2005-05-30 | 2011-07-20 | シャープ株式会社 | 液晶表示装置 |
KR101160831B1 (ko) | 2005-06-01 | 2012-06-28 | 삼성전자주식회사 | 액정 표시 장치 |
KR101219039B1 (ko) * | 2005-06-14 | 2013-01-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
KR101230301B1 (ko) * | 2005-07-19 | 2013-02-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 구동 방법 |
KR101230304B1 (ko) * | 2005-09-07 | 2013-02-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR101261611B1 (ko) * | 2005-09-15 | 2013-05-06 | 삼성디스플레이 주식회사 | 액정표시장치 |
KR101348376B1 (ko) * | 2006-06-16 | 2014-01-07 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP4570661B2 (ja) * | 2005-09-22 | 2010-10-27 | シャープ株式会社 | 液晶表示装置 |
KR20070051045A (ko) * | 2005-11-14 | 2007-05-17 | 삼성전자주식회사 | 액정 표시 장치 |
US7683988B2 (en) * | 2006-05-10 | 2010-03-23 | Au Optronics | Transflective liquid crystal display with gamma harmonization |
KR20080009888A (ko) * | 2006-07-25 | 2008-01-30 | 삼성전자주식회사 | 액정 표시 장치 |
KR20080010159A (ko) * | 2006-07-26 | 2008-01-30 | 삼성전자주식회사 | 액정 표시 장치 |
KR101269005B1 (ko) * | 2006-08-29 | 2013-06-04 | 엘지디스플레이 주식회사 | 액정표시장치의 어레이 기판 |
TWI444730B (zh) * | 2006-12-29 | 2014-07-11 | Innolux Corp | 畫素結構及應用其之液晶顯示面板及液晶顯示裝置 |
KR101369883B1 (ko) * | 2007-02-26 | 2014-03-25 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP5542297B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
JP5542296B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
JP4989309B2 (ja) | 2007-05-18 | 2012-08-01 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP5366458B2 (ja) * | 2007-07-11 | 2013-12-11 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置及びそれを用いた電子機器 |
TWI344035B (en) * | 2007-08-02 | 2011-06-21 | Au Optronics Corp | Multi-domain liquid crystal display |
TW200909923A (en) * | 2007-08-30 | 2009-03-01 | Wintek Corp | Multi-domain vertical alignment liquid crystal display panel, pixel array structure and driving methods thereof |
TWI373676B (en) | 2007-09-06 | 2012-10-01 | Au Optronics Corp | Pixel structure and forming method and driving method thereof |
KR101371604B1 (ko) * | 2007-11-26 | 2014-03-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
TWI408647B (zh) * | 2008-01-04 | 2013-09-11 | Wintek Corp | 液晶顯示器及其畫素結構 |
KR101409985B1 (ko) * | 2008-01-31 | 2014-06-20 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP5107421B2 (ja) * | 2008-03-31 | 2012-12-26 | シャープ株式会社 | アクティブマトリクス基板、液晶パネル、液晶表示装置、液晶表示ユニット、テレビジョン受像機 |
TWI388909B (zh) * | 2008-06-11 | 2013-03-11 | Chimei Innolux Corp | 薄膜電晶體陣列基板及其應用與製造方法 |
TWI392910B (zh) * | 2008-08-14 | 2013-04-11 | Au Optronics Corp | 雙影像平面顯示裝置 |
GB2475535A (en) * | 2009-11-23 | 2011-05-25 | Sharp Kk | Display with wire grid polarizer capacitively coupled to driving arrangement |
JP5154592B2 (ja) * | 2010-03-05 | 2013-02-27 | シャープ株式会社 | 液晶表示装置 |
TWI418883B (zh) | 2010-03-17 | 2013-12-11 | Au Optronics Corp | 修補方法以及主動元件陣列基板 |
JP5154597B2 (ja) * | 2010-04-16 | 2013-02-27 | シャープ株式会社 | 液晶表示装置 |
US8623681B2 (en) | 2010-07-09 | 2014-01-07 | Sharp Kabushiki Kaisha | Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel |
JP2011048396A (ja) * | 2010-12-06 | 2011-03-10 | Sharp Corp | 表示装置用基板及び表示装置 |
KR101777323B1 (ko) | 2011-03-14 | 2017-09-12 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 구동 방법 |
JP4949528B2 (ja) * | 2011-04-06 | 2012-06-13 | シャープ株式会社 | 液晶表示装置 |
JP5443537B2 (ja) * | 2012-04-27 | 2014-03-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び電子機器 |
KR102389875B1 (ko) * | 2015-09-01 | 2022-04-22 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
EP3792819A1 (en) | 2019-09-10 | 2021-03-17 | Thales Dis France SA | Method for determining a match between a candidate fingerprint and a reference fingerprint |
EP3792820A1 (en) | 2019-09-10 | 2021-03-17 | Thales Dis France SA | Method for determining a match between a candidate fingerprint and a reference fingerprint |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4840460A (en) | 1987-11-13 | 1989-06-20 | Honeywell Inc. | Apparatus and method for providing a gray scale capability in a liquid crystal display unit |
JP3081357B2 (ja) * | 1992-04-15 | 2000-08-28 | 富士通株式会社 | 液晶表示装置及びその製造方法 |
JPH06102537A (ja) * | 1992-09-22 | 1994-04-15 | Toshiba Corp | アクティブマトリクス型液晶表示素子 |
JPH0713191A (ja) | 1993-06-28 | 1995-01-17 | Casio Comput Co Ltd | アクティブマトリックス液晶表示素子 |
US5777700A (en) | 1993-07-14 | 1998-07-07 | Nec Corporation | Liquid crystal display with improved viewing angle dependence |
JP3866783B2 (ja) * | 1995-07-25 | 2007-01-10 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
JP3312101B2 (ja) | 1996-07-02 | 2002-08-05 | シャープ株式会社 | 液晶表示装置 |
KR100247628B1 (ko) * | 1996-10-16 | 2000-03-15 | 김영환 | 액정 표시 소자 및 그 제조방법 |
US6104450A (en) | 1996-11-07 | 2000-08-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, and methods of manufacturing and driving same |
JP3231261B2 (ja) | 1997-03-26 | 2001-11-19 | 株式会社アドバンスト・ディスプレイ | 液晶表示素子及びこれを用いた液晶表示装置 |
JP4386978B2 (ja) | 1998-08-07 | 2009-12-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6493048B1 (en) * | 1998-10-21 | 2002-12-10 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same |
JP3401589B2 (ja) * | 1998-10-21 | 2003-04-28 | 株式会社アドバンスト・ディスプレイ | Tftアレイ基板および液晶表示装置 |
JP4882140B2 (ja) * | 1999-06-25 | 2012-02-22 | 日本電気株式会社 | マルチドメイン液晶表示装置 |
JP2001066596A (ja) | 1999-08-24 | 2001-03-16 | Nec Corp | 液晶表示装置 |
KR100635940B1 (ko) * | 1999-10-29 | 2006-10-18 | 삼성전자주식회사 | 수직 배향형 액정 표시 장치 |
KR100512071B1 (ko) * | 1999-12-09 | 2005-09-02 | 엘지.필립스 엘시디 주식회사 | 광시야각을 갖는 액정표시장치 |
JP2001290166A (ja) | 2000-04-07 | 2001-10-19 | Mitsubishi Electric Corp | 液晶表示装置 |
KR100381868B1 (ko) * | 2000-11-29 | 2003-05-01 | 삼성전자주식회사 | 액정 표시 장치 및 그에 사용하는 기판 |
TW513604B (en) | 2001-02-14 | 2002-12-11 | Au Optronics Corp | A thin film transistor liquid crystal display |
JP3788259B2 (ja) * | 2001-03-29 | 2006-06-21 | 株式会社日立製作所 | 液晶表示装置 |
KR100831225B1 (ko) | 2001-10-12 | 2008-05-22 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 |
JP3999081B2 (ja) | 2002-01-30 | 2007-10-31 | シャープ株式会社 | 液晶表示装置 |
KR100870005B1 (ko) | 2002-03-07 | 2008-11-21 | 삼성전자주식회사 | 액정 표시 장치 |
JP4248306B2 (ja) | 2002-06-17 | 2009-04-02 | シャープ株式会社 | 液晶表示装置 |
KR100961941B1 (ko) * | 2003-01-03 | 2010-06-08 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치용 박막 트랜지스터 표시판 |
-
2003
- 2003-01-03 KR KR1020030000266A patent/KR100961941B1/ko active IP Right Grant
-
2004
- 2004-01-02 TW TW093100058A patent/TWI354849B/zh not_active IP Right Cessation
- 2004-01-05 US US10/750,890 patent/US6936845B2/en not_active Expired - Lifetime
- 2004-01-05 JP JP2004000026A patent/JP4452513B2/ja not_active Expired - Lifetime
-
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- 2005-07-26 US US11/188,657 patent/US7427972B2/en not_active Ceased
-
2009
- 2009-11-17 JP JP2009261896A patent/JP5350191B2/ja not_active Expired - Lifetime
-
2010
- 2010-09-23 US US12/889,001 patent/USRE44166E1/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004272259A (ja) * | 2003-03-06 | 2004-09-30 | Samsung Electronics Co Ltd | 液晶表示装置 |
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US20040135147A1 (en) | 2004-07-15 |
US6936845B2 (en) | 2005-08-30 |
JP5350191B2 (ja) | 2013-11-27 |
KR100961941B1 (ko) | 2010-06-08 |
USRE44166E1 (en) | 2013-04-23 |
US7427972B2 (en) | 2008-09-23 |
JP2004213011A (ja) | 2004-07-29 |
JP2010044419A (ja) | 2010-02-25 |
TWI354849B (en) | 2011-12-21 |
KR20040062752A (ko) | 2004-07-09 |
US20060001604A1 (en) | 2006-01-05 |
TW200426479A (en) | 2004-12-01 |
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