JP2004207742A5 - - Google Patents

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Publication number
JP2004207742A5
JP2004207742A5 JP2003425621A JP2003425621A JP2004207742A5 JP 2004207742 A5 JP2004207742 A5 JP 2004207742A5 JP 2003425621 A JP2003425621 A JP 2003425621A JP 2003425621 A JP2003425621 A JP 2003425621A JP 2004207742 A5 JP2004207742 A5 JP 2004207742A5
Authority
JP
Japan
Prior art keywords
active region
emitting device
region
conductivity type
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
JP2003425621A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004207742A (ja
Filing date
Publication date
Priority claimed from US10/632,720 external-priority patent/US6900474B2/en
Application filed filed Critical
Publication of JP2004207742A publication Critical patent/JP2004207742A/ja
Publication of JP2004207742A5 publication Critical patent/JP2004207742A5/ja
Revoked legal-status Critical Current

Links

JP2003425621A 2002-12-20 2003-12-22 コンパクトな活性領域を有する発光装置 Revoked JP2004207742A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43583802P 2002-12-20 2002-12-20
US10/632,720 US6900474B2 (en) 2002-12-20 2003-07-31 Light emitting devices with compact active regions

Publications (2)

Publication Number Publication Date
JP2004207742A JP2004207742A (ja) 2004-07-22
JP2004207742A5 true JP2004207742A5 (https=) 2007-02-15

Family

ID=32397268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003425621A Revoked JP2004207742A (ja) 2002-12-20 2003-12-22 コンパクトな活性領域を有する発光装置

Country Status (4)

Country Link
US (2) US6900474B2 (https=)
EP (2) EP3435427A1 (https=)
JP (1) JP2004207742A (https=)
TW (1) TWI336527B (https=)

Families Citing this family (26)

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Publication number Priority date Publication date Assignee Title
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
JP2005167091A (ja) * 2003-12-04 2005-06-23 Nitto Denko Corp 光半導体装置
US20060081859A1 (en) * 2004-10-15 2006-04-20 Shyi-Ming Pan Light emitting semiconductor bonding structure and method of manufacturing the same
JP5356810B2 (ja) * 2005-06-14 2013-12-04 コーニンクレッカ フィリップス エヌ ヴェ マルチビュー表示装置
JP2007142289A (ja) * 2005-11-21 2007-06-07 Sharp Corp 発光装置
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
JP4276684B2 (ja) * 2007-03-27 2009-06-10 株式会社東芝 半導体発光装置及びその製造方法
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
US8354687B1 (en) * 2008-07-30 2013-01-15 Nitek, Inc. Efficient thermal management and packaging for group III nitride based UV devices
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
WO2010116703A1 (ja) * 2009-04-06 2010-10-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
KR101064011B1 (ko) * 2009-04-28 2011-09-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101039948B1 (ko) * 2010-04-23 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2012227122A (ja) * 2011-04-04 2012-11-15 Rohm Co Ltd 有機ｅｌ装置
KR20140090346A (ko) * 2013-01-07 2014-07-17 삼성전자주식회사 반도체 발광 소자
KR102172934B1 (ko) * 2013-07-22 2020-11-03 루미리즈 홀딩 비.브이. 플립-칩 측면 방출 led
KR102212561B1 (ko) * 2014-08-11 2021-02-08 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자 패키지
WO2017164036A1 (ja) * 2016-03-24 2017-09-28 スタンレー電気株式会社 Ｉｉｉ族窒化物積層体の製造方法
JP6727185B2 (ja) 2017-12-28 2020-07-22 日機装株式会社 窒化物半導体発光素子
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
CA2030368C (en) 1989-11-22 2000-03-28 Daido Tokushuko Kabushiki Kaisha Light-emitting diode having light reflecting layer
JPH05190901A (ja) * 1992-01-17 1993-07-30 Sharp Corp 半導体発光素子とその製造方法
JP3373561B2 (ja) * 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
US5362977A (en) * 1992-12-28 1994-11-08 At&T Bell Laboratories Single mirror light-emitting diodes with enhanced intensity
US5537433A (en) 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
JP3809749B2 (ja) * 1995-09-29 2006-08-16 日亜化学工業株式会社 窒化物半導体発光素子
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
EP1129492B1 (de) * 1998-09-30 2014-04-09 OSRAM Opto Semiconductors GmbH Oberflächenemittierende diodenstrahlungsquelle
JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
JP2001053336A (ja) * 1999-08-05 2001-02-23 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
EP2270875B1 (de) * 2000-04-26 2018-01-10 OSRAM Opto Semiconductors GmbH Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren
US6753214B1 (en) * 2001-02-16 2004-06-22 Optical Communication Products, Inc. Photodetector with isolation implant region for reduced device capacitance and increased bandwidth

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