JP2004207742A - コンパクトな活性領域を有する発光装置 - Google Patents

コンパクトな活性領域を有する発光装置 Download PDF

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Publication number
JP2004207742A
JP2004207742A JP2003425621A JP2003425621A JP2004207742A JP 2004207742 A JP2004207742 A JP 2004207742A JP 2003425621 A JP2003425621 A JP 2003425621A JP 2003425621 A JP2003425621 A JP 2003425621A JP 2004207742 A JP2004207742 A JP 2004207742A
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JP
Japan
Prior art keywords
active region
emitting device
light emitting
conductivity type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
JP2003425621A
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English (en)
Japanese (ja)
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JP2004207742A5 (https=
Inventor
Mira S Misra
エス ミスラ ミラ
Yu-Chen Shen
シェン ユ−チェン
Stephen A Stockman
エイ ストックマン スティーブン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds LLC filed Critical Lumileds LLC
Publication of JP2004207742A publication Critical patent/JP2004207742A/ja
Publication of JP2004207742A5 publication Critical patent/JP2004207742A5/ja
Revoked legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2003425621A 2002-12-20 2003-12-22 コンパクトな活性領域を有する発光装置 Revoked JP2004207742A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43583802P 2002-12-20 2002-12-20
US10/632,720 US6900474B2 (en) 2002-12-20 2003-07-31 Light emitting devices with compact active regions

Publications (2)

Publication Number Publication Date
JP2004207742A true JP2004207742A (ja) 2004-07-22
JP2004207742A5 JP2004207742A5 (https=) 2007-02-15

Family

ID=32397268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003425621A Revoked JP2004207742A (ja) 2002-12-20 2003-12-22 コンパクトな活性領域を有する発光装置

Country Status (4)

Country Link
US (2) US6900474B2 (https=)
EP (2) EP3435427A1 (https=)
JP (1) JP2004207742A (https=)
TW (1) TWI336527B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142289A (ja) * 2005-11-21 2007-06-07 Sharp Corp 発光装置
KR101064011B1 (ko) 2009-04-28 2011-09-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP2013062552A (ja) * 2006-05-08 2013-04-04 Lg Electronics Inc 発光素子
WO2019130804A1 (ja) * 2017-12-28 2019-07-04 日機装株式会社 窒化物半導体発光素子
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
JP2005167091A (ja) * 2003-12-04 2005-06-23 Nitto Denko Corp 光半導体装置
US20060081859A1 (en) * 2004-10-15 2006-04-20 Shyi-Ming Pan Light emitting semiconductor bonding structure and method of manufacturing the same
JP5356810B2 (ja) * 2005-06-14 2013-12-04 コーニンクレッカ フィリップス エヌ ヴェ マルチビュー表示装置
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
JP4276684B2 (ja) * 2007-03-27 2009-06-10 株式会社東芝 半導体発光装置及びその製造方法
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
US8354687B1 (en) * 2008-07-30 2013-01-15 Nitek, Inc. Efficient thermal management and packaging for group III nitride based UV devices
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
WO2010116703A1 (ja) * 2009-04-06 2010-10-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101039948B1 (ko) * 2010-04-23 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2012227122A (ja) * 2011-04-04 2012-11-15 Rohm Co Ltd 有機ｅｌ装置
KR20140090346A (ko) * 2013-01-07 2014-07-17 삼성전자주식회사 반도체 발광 소자
KR102172934B1 (ko) * 2013-07-22 2020-11-03 루미리즈 홀딩 비.브이. 플립-칩 측면 방출 led
KR102212561B1 (ko) * 2014-08-11 2021-02-08 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자 패키지
WO2017164036A1 (ja) * 2016-03-24 2017-09-28 スタンレー電気株式会社 Ｉｉｉ族窒化物積層体の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020190260A1 (en) * 1999-12-22 2002-12-19 Yu-Chen Shen Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction

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CA2030368C (en) 1989-11-22 2000-03-28 Daido Tokushuko Kabushiki Kaisha Light-emitting diode having light reflecting layer
JPH05190901A (ja) * 1992-01-17 1993-07-30 Sharp Corp 半導体発光素子とその製造方法
JP3373561B2 (ja) * 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
US5362977A (en) * 1992-12-28 1994-11-08 At&T Bell Laboratories Single mirror light-emitting diodes with enhanced intensity
US5537433A (en) 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
JP3809749B2 (ja) * 1995-09-29 2006-08-16 日亜化学工業株式会社 窒化物半導体発光素子
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
EP1129492B1 (de) * 1998-09-30 2014-04-09 OSRAM Opto Semiconductors GmbH Oberflächenemittierende diodenstrahlungsquelle
JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
JP2001053336A (ja) * 1999-08-05 2001-02-23 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
EP2270875B1 (de) * 2000-04-26 2018-01-10 OSRAM Opto Semiconductors GmbH Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren
US6753214B1 (en) * 2001-02-16 2004-06-22 Optical Communication Products, Inc. Photodetector with isolation implant region for reduced device capacitance and increased bandwidth

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020190260A1 (en) * 1999-12-22 2002-12-19 Yu-Chen Shen Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142289A (ja) * 2005-11-21 2007-06-07 Sharp Corp 発光装置
JP2013062552A (ja) * 2006-05-08 2013-04-04 Lg Electronics Inc 発光素子
US9246054B2 (en) 2006-05-08 2016-01-26 Lg Innotek Co., Ltd. Light emitting device having light extraction structure and method for manufacturing the same
US9837578B2 (en) 2006-05-08 2017-12-05 Lg Innotek Co., Ltd. Light emitting device having light extraction structure and method for manufacturing the same
KR101064011B1 (ko) 2009-04-28 2011-09-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
WO2019130804A1 (ja) * 2017-12-28 2019-07-04 日機装株式会社 窒化物半導体発光素子
JP2019121654A (ja) * 2017-12-28 2019-07-22 日機装株式会社 窒化物半導体発光素子
US11367807B2 (en) 2017-12-28 2022-06-21 Nikkiso Co., Ltd. Nitride semiconductor light-emitting element
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Also Published As

Publication number Publication date
US7719018B2 (en) 2010-05-18
EP3435427A1 (en) 2019-01-30
EP1432046A3 (en) 2004-07-14
US20050212005A1 (en) 2005-09-29
TW200503291A (en) 2005-01-16
TWI336527B (en) 2011-01-21
US6900474B2 (en) 2005-05-31
US20040119077A1 (en) 2004-06-24
EP1432046A2 (en) 2004-06-23

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