TWI336527B - Light emitting devices with compact active regions - Google Patents

Light emitting devices with compact active regions Download PDF

Info

Publication number
TWI336527B
TWI336527B TW092135747A TW92135747A TWI336527B TW I336527 B TWI336527 B TW I336527B TW 092135747 A TW092135747 A TW 092135747A TW 92135747 A TW92135747 A TW 92135747A TW I336527 B TWI336527 B TW I336527B
Authority
TW
Taiwan
Prior art keywords
active region
illuminating device
conductivity type
type region
region
Prior art date
Application number
TW092135747A
Other languages
English (en)
Chinese (zh)
Other versions
TW200503291A (en
Inventor
Mira S Misra
Yu-Chen Shen
Stephen A Stockman
Original Assignee
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Lumileds Lighting Co filed Critical Philips Lumileds Lighting Co
Publication of TW200503291A publication Critical patent/TW200503291A/zh
Application granted granted Critical
Publication of TWI336527B publication Critical patent/TWI336527B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW092135747A 2002-12-20 2003-12-17 Light emitting devices with compact active regions TWI336527B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43583802P 2002-12-20 2002-12-20
US10/632,720 US6900474B2 (en) 2002-12-20 2003-07-31 Light emitting devices with compact active regions

Publications (2)

Publication Number Publication Date
TW200503291A TW200503291A (en) 2005-01-16
TWI336527B true TWI336527B (en) 2011-01-21

Family

ID=32397268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092135747A TWI336527B (en) 2002-12-20 2003-12-17 Light emitting devices with compact active regions

Country Status (4)

Country Link
US (2) US6900474B2 (https=)
EP (2) EP3435427A1 (https=)
JP (1) JP2004207742A (https=)
TW (1) TWI336527B (https=)

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US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
JP2005167091A (ja) * 2003-12-04 2005-06-23 Nitto Denko Corp 光半導体装置
US20060081859A1 (en) * 2004-10-15 2006-04-20 Shyi-Ming Pan Light emitting semiconductor bonding structure and method of manufacturing the same
JP5356810B2 (ja) * 2005-06-14 2013-12-04 コーニンクレッカ フィリップス エヌ ヴェ マルチビュー表示装置
JP2007142289A (ja) * 2005-11-21 2007-06-07 Sharp Corp 発光装置
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
JP4276684B2 (ja) * 2007-03-27 2009-06-10 株式会社東芝 半導体発光装置及びその製造方法
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
US8354687B1 (en) * 2008-07-30 2013-01-15 Nitek, Inc. Efficient thermal management and packaging for group III nitride based UV devices
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
WO2010116703A1 (ja) * 2009-04-06 2010-10-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
KR101064011B1 (ko) * 2009-04-28 2011-09-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101039948B1 (ko) * 2010-04-23 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2012227122A (ja) * 2011-04-04 2012-11-15 Rohm Co Ltd 有機ｅｌ装置
KR20140090346A (ko) * 2013-01-07 2014-07-17 삼성전자주식회사 반도체 발광 소자
KR102172934B1 (ko) * 2013-07-22 2020-11-03 루미리즈 홀딩 비.브이. 플립-칩 측면 방출 led
KR102212561B1 (ko) * 2014-08-11 2021-02-08 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자 패키지
WO2017164036A1 (ja) * 2016-03-24 2017-09-28 スタンレー電気株式会社 Ｉｉｉ族窒化物積層体の製造方法
JP6727185B2 (ja) 2017-12-28 2020-07-22 日機装株式会社 窒化物半導体発光素子
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

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JPH05190901A (ja) * 1992-01-17 1993-07-30 Sharp Corp 半導体発光素子とその製造方法
JP3373561B2 (ja) * 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
US5362977A (en) * 1992-12-28 1994-11-08 At&T Bell Laboratories Single mirror light-emitting diodes with enhanced intensity
US5537433A (en) 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
JP3809749B2 (ja) * 1995-09-29 2006-08-16 日亜化学工業株式会社 窒化物半導体発光素子
JP3304787B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
EP1129492B1 (de) * 1998-09-30 2014-04-09 OSRAM Opto Semiconductors GmbH Oberflächenemittierende diodenstrahlungsquelle
JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
JP2001053336A (ja) * 1999-08-05 2001-02-23 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
EP2270875B1 (de) * 2000-04-26 2018-01-10 OSRAM Opto Semiconductors GmbH Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren
US6753214B1 (en) * 2001-02-16 2004-06-22 Optical Communication Products, Inc. Photodetector with isolation implant region for reduced device capacitance and increased bandwidth

Also Published As

Publication number Publication date
US7719018B2 (en) 2010-05-18
EP3435427A1 (en) 2019-01-30
EP1432046A3 (en) 2004-07-14
JP2004207742A (ja) 2004-07-22
US20050212005A1 (en) 2005-09-29
TW200503291A (en) 2005-01-16
US6900474B2 (en) 2005-05-31
US20040119077A1 (en) 2004-06-24
EP1432046A2 (en) 2004-06-23

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