JP2004200673A - 新規の気孔形成物質を含有する多孔性層間絶縁膜形成用組成物 - Google Patents
新規の気孔形成物質を含有する多孔性層間絶縁膜形成用組成物 Download PDFInfo
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- JP2004200673A JP2004200673A JP2003404319A JP2003404319A JP2004200673A JP 2004200673 A JP2004200673 A JP 2004200673A JP 2003404319 A JP2003404319 A JP 2003404319A JP 2003404319 A JP2003404319 A JP 2003404319A JP 2004200673 A JP2004200673 A JP 2004200673A
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 239000012895 dilution Substances 0.000 description 1
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- 229950010007 dimantine Drugs 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- FFJMLWSZNCJCSZ-UHFFFAOYSA-N n-methylmethanamine;hydrobromide Chemical compound Br.CNC FFJMLWSZNCJCSZ-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
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- FLYWOGRYUZXTIZ-UHFFFAOYSA-N tetraazanium;tetrabromide Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[Br-].[Br-].[Br-].[Br-] FLYWOGRYUZXTIZ-UHFFFAOYSA-N 0.000 description 1
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- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Abstract
【解決手段】 ジェミニ型界面活性剤、4級アルキルアンモニウム塩、またはこれらの混合物である気孔形成物質;熱的に安定な有機または無機マトリックス前駆体;および、前記物質を溶解させる溶媒;を含有する多孔性層間絶縁膜形成用組成物を提供し、これによれば、硬度、モジュラスなどの機械的な物性および耐吸湿性に優れた半導体用層間絶縁膜を提供することができる。
【選択図】 なし
Description
熱的に安定な有機または無機マトリックス前駆体;および
前記物質およびマトリックス前駆体を溶解する溶媒;を含有することを特徴とする多孔性層間絶縁膜形成用組成物。
[一般式9]
NL1L2L3L4X
(ただし、式中、Nは窒素原子、Xはハロゲン原子であり、L1、L2、L3およびL4は、それぞれ独立に炭素数1〜30のアルキル基である。)。
SiX1X2X3X4
(ただし、式中、X1、X2、X3、X4はそれぞれ独立に炭素数1〜10のアルコキシ基、またはハロゲン原子である。)
[一般式6]
R1SiX1X2X3
(ただし、式中、R1は水素原子、炭素数1〜3のアルキル基、炭素数3〜10のシクロアルキル基、または炭素数6〜15のアリール基であり、X1、X2、X3はそれぞれ独立に炭素数1〜10のアルコキシ基、またはハロゲン原子である。)
[一般式7]
R1R2SiX1X2
(ただし、式中、R1、R2はそれぞれ独立に水素原子、炭素数1〜3のアルキル基、炭素数3〜10のシクロアルキル基、または炭素数6〜15のアリール基であり、X1、X2はそれぞれ独立に炭素数1〜10のアルコキシ基、またはハロゲン原子である。)。
[一般式9]
NL1L2L3L4X
(ただし、式中、Nは窒素原子であり、Xはハロゲン原子であり、L1、L2、L3およびL4は、それぞれ独立に炭素数1〜30のアルキル基である。)。
[一般式11]
R3R2R1N
(ただし、式中、R1およびR2はそれぞれ独立にメチル基またはエチル基であり、R3は炭素数5〜40のアルキル基である。)。
実施例1−1(モノマーA合成)
2,4,6,8−テトラメチル−2,4,6,8−テトラビニルシクロテトラシロキサン(2、4.6、8−tetramethy−2,4,6,8−tetravinylcyclotetrasiloxane)29.014mmol(10.0g)とキシレン溶液に溶けている白金(0)−1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン化合物(platinum(0)−1,3−divinyl−1,1,3,3−tetramethyldisiloxane complex(solution in xylenes))0.164gをフラスコに加えた後、ジエチルエーテル300mlを加えて希釈した。以後、反応温度を−78℃に低くした後、トリクロロシラン127.66mmol(17.29g)を徐々に加えて、反応温度を徐々に常温まで上げた。以後、常温で20時間反応を行った後、0.1トル(torr)程度の減圧下で揮発性物質を除去し、ペンタン100mlを加えた後に、1時間攪拌した後セライト(celite)を用いてろ過して、無色の澄んだ溶液を得た。再び0.1トル程度の減圧下でペンタンを除去して無色の液体化合物[−Si(CH3)(CH2CH2SiCl3)O−]4を95%の収率で得た。
実施例2−1
前駆体A:モノマーAの単独重合
モノマーA9.85mmol(8.218g)をフラスコに入れた後、テトラヒドロフラン90mlで希釈して、−78℃で水と濃塩酸(塩化水素35%含有)を100ml:8.8mlの割合で混合した塩酸溶液を塩化水素が1.18mmol添加されるように徐々に加えた後、上で添加した希釈塩酸溶液中に含まれる水量を合わせて全部で393.61mmol(7.084g)の水を徐々に加えた。以後、反応温度を徐々に70℃まで上げて反応を16時間行った。以後、反応溶液を分別漏斗(separatory funnel)に移した後、ジエチルエーテル90mlを加えて、水100mlで5回洗った後、この溶液に硫酸ナトリウム(無水)(sodium sulfate anhydrous)5gを加え、常温で10時間攪拌して溶液に含まれている微量の水を除去した後、ろ過した。得られた無色の澄んだ溶液を、0.1トル程度の減圧下で揮発性物質を除去して白色粉末の前駆体A5.3gを得た。
前駆体B:モノマーAとメチルトリメトキシシランの共重合
メチルトリメトキシシラン(methyltrimethoxysilane)37.86mmol(5.158g)とモノマーA3.79mmol(3.162g)をフラスコに入れた後、テトラヒドロフラン100mlで希釈して、−78℃で水と濃塩酸(塩化水素35%含有)を100ml:0.12mlの割合で混合した塩酸溶液を塩化水素が0.0159mmol添加されるように徐々に加えた後、上で添加した希釈塩酸溶液中に含まれる水量を合わせて全部で529.67mmol(9.534g)の水を徐々に加えた。以後、反応温度を徐々に70℃まで上げて反応を16時間行った。次に反応溶液を分別漏斗に移した後、ジエチルエーテル100mlを加えて、水100mlで5回洗った後、この溶液に硫酸ナトリウム(無水)5gを加えて常温で10時間の間攪拌して溶液に含まれている微量の水を除去し、ろ過した。得られた無色の澄んだ溶液を、0.1トル程度の減圧下で揮発性物質を除去して白色粉末の前駆体B5.5gを得た。
前記で合成されたシロキサン系樹脂前駆体の分子量及び分子量分布をゲルパミエーションクロマトグラフィ(gel permeation chromatography、Waters社)で分析し、シロキサン系樹脂末端基のSi−OH(モル%)含有量を核磁気共鳴分析機(NMR、Bruker社)で分析して、その結果を表1に示す。
=Area(面積)(Si−OH)÷[Area(Si−OH)+Area(Si−OCH3)/3+Area(Si−CH3)/3]×100
・Si−OCH3(モル%)
=Area(Si−OCH3)/3÷[Area(Si−OH)+Area(Si−OCH3)/3+Area(Si−CH3)/3]×100
・Si−CH3(モル%)
=Area(Si−CH3)/3÷[Area(Si−OH)+Area(Si−OCH3)/3+Area(Si−CH3)/3]×100。
実施例4−1
ジェミニ型界面活性剤気孔形成物質(a−1)
100mlのアセトニトリルと10.0gのビス(クロロメチル)テトラメチルジシロキサン(A)とを混合して溶液を製造した後、この溶液に、21.4gのテトラデシルジメチルアミン(n=14、B)を添加した。反応物中のAとBのモル比は1:2.05にした。得られた溶液を還流(reflex)条件下、82℃で24時間加熱した。ロータリーエバポレーター(rotary evaporator)を用いて溶媒のアセトニトリルを除去し、固体生成物を得た。この固体生成物に2mlのクロロホルムを添加して溶解させた後、500mlの酢酸エチルを添加し、0℃で12時間放置して再結晶した。再結晶された物質をろ過し、酢酸エチルで3回に分けて洗浄した後、再結晶およびろ過、洗浄過程を2回さらに繰り返した。得られた物質を、真空オーブンを用いて50℃で12時間乾燥させて溶媒を完全に除去し、C14H29N(CH3)2CH2Si(CH3)2OSi(CH3)2CH2N(CH3)2C14H29Cl2を得た。
ジェミニ型界面活性剤気孔形成物質(a−2)
200mlのエタノールと7.24gのBrCH2CH2CH2OSi(CH3)2OSi(CH3)2OSi(CH3)2OCH2CH2CH2Br(A)とを混合して溶液を製造した後、この溶液に、9.15gのオクタデシルジメチルアミン(octadecyldimethlyamine)(B)を添加した。反応物中のAとBのモル比は1:2.05にした。得られた溶液を還流条件下で48時間加熱した。ロータリーエバポレーターを用い、溶媒のエタノールを除去して固体生成物を得た。この固体生成物に2mlのクロロホルムを添加して溶解させた後、500mlの酢酸エチルを添加し、0℃で12時間放置して再結晶した。再結晶された物質をろ過し、酢酸エチルで3回に分けて洗浄した後、再結晶およびろ過、洗浄過程を2回さらに繰り返した。得られた物質は真空オーブンを用い、50℃で12時間乾燥させて溶媒を完全に除去し、C18H37N(CH3)2BrCH2CH2CH2OSi(CH3)2OSi(CH3)2OSi(CH3)2OCH2CH2CH2BrN(CH3)2C18H37を得た。
実施例2で製造されたシロキサン系樹脂マトリックス前駆体、気孔形成物質、およびプロピレングリコールメチルエーテルアセテート(propylene glycol methyl ether acetate:PGMEA)を、下記の表2に示す組成比で混合して本発明の組成物を製造した。これを使って、ボロン(boron)でドープ(doping)されたP−タイプのシリコンウェーハ(silicon wafer)上に3000rpmの速度でスピンコーティングを行った。シロキサン系樹脂がコーティングされた基板を、ホットプレート(hot plate)を用い、150℃で1分、250℃で1分の順にソフトベーキング(soft baking)を実施して有機溶剤を充分に除去した。前記製造された基板をLinberg炉中で420℃、真空雰囲気下で60分間硬化した後、低誘電膜の膜厚と屈折率についてプリズムカップラ(prism coupler)を用いて測定した。その測定結果を表2に示す。
気孔形成物質含量(2)(wt%)=気孔形成物質質量(g)×100/[気孔形成物質質量(g)+マトリックス前駆体質量(g)]
気孔形成物質(b−1):テトラヘキシルアンモニウム臭化物(Tetrahexylammonium bromide)、シグマアルドリッチ社から購入し、別途精製せずに使用
気孔形成物質(b−2):ジデシルジメチルアンモニウム臭化物(Didecyldimethylammonium bromide)、シグマアルドリッチ社から購入し、別途精製せずに使用
気孔形成物質(c):へプタキス(2,4,6−トリ−O−メチル)−β−シクロデキストリン(Heptakis(2,4,6−tri−O−methyl)−β−cyclodextrin)、シグマアルドリッチ社から購入し、別途精製せずに使用。
製造された多孔性薄膜の誘電率を測定するために、ボロンでドープされたP−タイプのシリコンウェーハ上にシリコン熱酸化膜を3000Åの膜厚に塗布した後、メタルエバポレーター(Metal evaporator)でチタン(titanium)薄膜100Å、アルミニウム(Aluminum)薄膜2000Åを蒸着した後、実施例5と同じ方法および同組成で低誘電薄膜をコーティングした。その後、電極径が1mmに設計されたハードマスク(hard mask)を用い、1mm径を有する円形のアルミニウム薄膜2000Åを蒸着してMIM(Metal−insulator−metal)構造の誘電率測定用低誘電薄膜を完成した。この薄膜に対し、Probe station(Micromanipulatior 6200 probe station)付きのPRECISION LCR METER(HP4284A)を用いて約100kHzの周波数で静電容量(Capacitance)の測定を行った。薄膜の膜厚をプリズムカップラで測定し、下記の計算式で誘電率を計算した。
k:誘電率(dielectric ratio)
C:静電容量
A:電極の接触断面積
εo:真空の誘電定数(Dielectric constant)
d:低誘電薄膜の膜厚
製造された多孔性薄膜の吸湿程度を測定するために、実施例5で製造した誘電率測定用低誘電薄膜を蒸留水に4日間浸漬してから取り出し、窒素を1分間吹き付けて薄膜上の水分を除去した後、実施例6と同じ方法でProbe station(Micromanipulatior 6200 probe station)付きのPRECISION LCR METER(HP4284A)を用いて約100kHzの周波数で静電容量(Capacitance)を測定し、その変化程度に基づいて吸湿程度を測定した。大部分の場合、吸湿すると、吸湿テスト後の静電容量の値が吸湿テスト前の値に比べて約10%以上増加したが、本願発明の場合は、静電容量の変化が少なく、吸湿が起こらなかったことがわかる。
硬度(hardness)およびモジュラス(modulus)は、実施例5と同じ方法で製造された薄膜を、MTSシステムズ社のナノインデンター(nanoindenter)IIを用いて測定した。つまり、ナノインデンターで圧入開始し、その圧入深さが薄膜の全体厚の10%となったとき、薄膜の硬度とモジュラスを求めた。また、各サンプルの信頼度を確保するために6pointを圧入(indent)し、平均値からそれぞれの硬度およびモジュラスを求めた。なお、薄膜の膜厚はプリズムカップラを用いて測定した。その結果を表5および表6に示す。
Claims (19)
- 下記一般式8で示されるジェミニ型界面活性剤、下記一般式9で示される4級アルキルアンモニウム塩、またはこれらの混合物である気孔形成物質;
熱的に安定な有機または無機マトリックス前駆体;および
前記物質およびマトリックス前駆体を溶解する溶媒;を含有することを特徴とする多孔性層間絶縁膜形成用組成物:
[一般式9]
NL1L2L3L4X
(ただし、式中、Nは窒素原子であり、Xはハロゲン原子であり、L1、L2、L3およびL4は、それぞれ独立に炭素数1〜30のアルキル基である。)。 - 前記組成物に包含される全固形分中前記気孔形成物質の含有量が0.1〜95質量%であることを特徴とする請求項1記載の組成物。
- 前記組成物中前記溶媒の含有量が20〜99.9質量%であることを特徴とする請求項1記載の組成物。
- 前記気孔形成物質として下記一般式12で示されるシクロデキストリン誘導体をさらに含有することを特徴とする請求項1記載の組成物:
- 前記シクロデキストリン誘導体が、下記の一般式13〜15で示されるα、βまたはγ−シクロデキストリン誘導体であることを特徴とする請求項4記載の組成物:
- 前記シクロデキストリン誘導体が、全気孔形成物質中5〜95質量%を占めることを特徴とする請求項4記載の組成物。
- 前記4級アルキルアンモニウム塩が、テトラメチルアンモニウム臭化物、テトラエチルアンモニウム臭化物、テトラプロピルアンモニウム臭化物、テトラブチルアンモニウム臭化物、テトラペンチルアンモニウム臭化物、テトラヘキシルアンモニウム臭化物、テトラヘプチルアンモニウム臭化物、テトラオクチルアンモニウム臭化物、テトラヘキサデシルアンモニウム臭化物、テトラオクタデシルアンモニウム臭化物、ジエチルジメチルアンモニウム臭化物、ジプロピルジメチルアンモニウム臭化物、ジブチルジメチルアンモニウム臭化物、ジペンチルジメチルアンモニウム臭化物、ジヘキシルジメチルアンモニウム臭化物、ジヘプチルジメチルアンモニウム臭化物、ジオクチルジメチルアンモニウム臭化物、およびジデシルジメチルアンモニウム臭化物よりなる群から選択された物質であることを特徴とする請求項1記載の組成物。
- 前記マトリックス前駆体がシルセスキオキサン、アルコキシシランゾル、またはシロキサン系高分子であることを特徴とする請求項1記載の組成物。
- 前記シルセスキオキサンが水素シルセスキオキサン、アルキルシルセスキオキサン(、アリールシルセスキオキサンまたはこれらの共重合体であることを特徴とする請求項8記載の組成物。
- 前記マトリックス前駆体が下記一般式1〜4で示される化合物よりなる群から選択された1種以上のモノマーを有機溶媒下で酸触媒と水を利用して加水分解及び縮合反応させて得られたシロキサン系樹脂であることを特徴とする請求項1記載の組成物:
- 前記マトリックス前駆体が下記一般式1〜4で示される化合物よりなる群から選択された1種以上のモノマーと下記一般式5〜7で示される化合物よりなる群から選択された1種以上のシラン系モノマーを有機溶媒下で酸触媒と水を利用して加水分解及び縮合反応させて得られたシロキサン系樹脂であることを特徴とする請求項1記載の組成物:
[一般式5]
SiX1X2X3X4
(ただし、式中、X1、X2、X3、X4はそれぞれ独立に炭素数1〜10のアルコキシ基、またはハロゲン原子である。)
[一般式6]
R1SiX1X2X3
(ただし、式中、R1は水素原子、炭素数1〜3のアルキル基、炭素数3〜10のシクロアルキル基、または炭素数6〜15のアリール基であり、X1、X2、X3はそれぞれ独立に炭素数1〜10のアルコキシ基、またはハロゲン原子である。)
[一般式7]
R1R2SiX1X2
(ただし、式中、R1、R2はそれぞれ独立に水素原子、炭素数1〜3のアルキル基、炭素数3〜10のシクロアルキル基、または炭素数6〜15のアリール基であり、X1、X2はそれぞれ独立に炭素数1〜10のアルコキシ基、またはハロゲン原子である。)。 - 前記マトリックス前駆体のSi−OH含量が、5〜70モル%であることを特徴とする請求項10または11に記載の組成物。
- 前記マトリックス前駆体中、環形またはケージ形モノマーとシラン系モノマーのモル比が、0.99:0.01〜0.01:0.99であることを特徴とする請求項11記載の組成物。
- 前記マトリックス前駆体がポリイミド、ポリベンゾシクロブテン、ポリアリーレン、またはこれらの混合物であることを特徴とする請求項1記載の組成物。
- 前記溶媒が芳香族炭化水素系溶媒、ケトン系溶媒、エーテル系溶媒、アセテート系溶媒と、アミド系溶媒、γ−ブチロラクトン、アルコール系溶媒、シリコン溶媒またはこれらの混合物であることを特徴とする請求項1記載の組成物。
- 請求項1記載の組成物を半導体基板上に塗布した後、溶媒を蒸発させて、不活性気体雰囲気中または真空雰囲気で150〜600℃で加熱させる段階とを含むことを特徴とする半導体用の層間絶縁膜の製造方法。
- 前記半導体層間絶縁膜の塗布が1000〜5000rpm速度のスピンコーティングによって形成されることを特徴とする請求項16記載の半導体用の層間絶縁膜の製造方法。
- 請求項1記載の組成物を使用して製造されたナノ気孔を有することを特徴とする物質。
- 請求項18記載のナノ気孔を有する物質を、耐熱性素材、電機絶縁性素材、吸着剤または担体に適用する方法。
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KR100554327B1 (ko) * | 2001-09-14 | 2006-02-24 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의 형성방법 |
DE60135540D1 (de) * | 2001-03-27 | 2008-10-09 | Samsung Electronics Co Ltd | noporen |
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JP4465181B2 (ja) | 2010-05-19 |
EP1435369B1 (en) | 2007-02-07 |
KR100533538B1 (ko) | 2005-12-05 |
EP1435369A1 (en) | 2004-07-07 |
CN1511881A (zh) | 2004-07-14 |
US20040110854A1 (en) | 2004-06-10 |
DE60311635T2 (de) | 2007-11-22 |
KR20040049065A (ko) | 2004-06-11 |
DE60311635D1 (de) | 2007-03-22 |
CN100460468C (zh) | 2009-02-11 |
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