JP2004133407A5 - - Google Patents

Download PDF

Info

Publication number
JP2004133407A5
JP2004133407A5 JP2003283547A JP2003283547A JP2004133407A5 JP 2004133407 A5 JP2004133407 A5 JP 2004133407A5 JP 2003283547 A JP2003283547 A JP 2003283547A JP 2003283547 A JP2003283547 A JP 2003283547A JP 2004133407 A5 JP2004133407 A5 JP 2004133407A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
growing
region
semiconductor
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003283547A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004133407A (ja
Filing date
Publication date
Priority claimed from US10/210,799 external-priority patent/US6649439B1/en
Application filed filed Critical
Publication of JP2004133407A publication Critical patent/JP2004133407A/ja
Publication of JP2004133407A5 publication Critical patent/JP2004133407A5/ja
Pending legal-status Critical Current

Links

JP2003283547A 2002-08-01 2003-07-31 犠牲層プロセスを使用する半導体空隙格子製造 Pending JP2004133407A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/210,799 US6649439B1 (en) 2002-08-01 2002-08-01 Semiconductor-air gap grating fabrication using a sacrificial layer process

Publications (2)

Publication Number Publication Date
JP2004133407A JP2004133407A (ja) 2004-04-30
JP2004133407A5 true JP2004133407A5 (cg-RX-API-DMAC7.html) 2006-08-17

Family

ID=29420053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003283547A Pending JP2004133407A (ja) 2002-08-01 2003-07-31 犠牲層プロセスを使用する半導体空隙格子製造

Country Status (4)

Country Link
US (2) US6649439B1 (cg-RX-API-DMAC7.html)
EP (1) EP1394911B1 (cg-RX-API-DMAC7.html)
JP (1) JP2004133407A (cg-RX-API-DMAC7.html)
DE (1) DE60319314T2 (cg-RX-API-DMAC7.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6944373B2 (en) * 2002-08-01 2005-09-13 Northrop Grumman Corporation High index-step grating fabrication using a regrowth-over-dielectric process
US6649439B1 (en) * 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process
US7116878B2 (en) * 2003-04-24 2006-10-03 Mesophotonics Ltd. Optical waveguide structure
US7251386B1 (en) 2004-01-14 2007-07-31 Luxtera, Inc Integrated photonic-electronic circuits and systems
US7773836B2 (en) 2005-12-14 2010-08-10 Luxtera, Inc. Integrated transceiver with lightpipe coupler
KR100852110B1 (ko) * 2004-06-26 2008-08-13 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그 제조 방법
SG139547A1 (en) * 2004-08-04 2008-02-29 Agency Science Tech & Res Distributed feedback and distributed bragg reflector semiconductor lasers
DE102006036831B9 (de) * 2006-08-07 2016-04-14 Friedrich-Schiller-Universität Jena Verschlossene, binäre Transmissionsgitter
US20090229651A1 (en) * 2008-03-14 2009-09-17 Fay Jr Theodore Denis Solar energy production system
DE102008054217A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
EP2524260A4 (en) * 2009-08-11 2013-07-24 Chromx Llc ULTRA DARK FIELD MICROSCOPE
JP5573309B2 (ja) * 2010-04-01 2014-08-20 住友電気工業株式会社 マッハツェンダー型光変調素子
WO2021168853A1 (zh) * 2020-02-29 2021-09-02 华为技术有限公司 一种dfb激光器
PL439368A1 (pl) 2021-10-30 2023-05-02 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Unipress Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231488A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
IT1245541B (it) * 1991-05-13 1994-09-29 Cselt Centro Studi Lab Telecom Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione
US5955749A (en) * 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
FR2765347B1 (fr) * 1997-06-26 1999-09-24 Alsthom Cge Alcatel Reflecteur de bragg en semi-conducteur et procede de fabrication
US6358854B1 (en) * 1999-04-21 2002-03-19 Sandia Corporation Method to fabricate layered material compositions
US6468823B1 (en) * 1999-09-30 2002-10-22 California Institute Of Technology Fabrication of optical devices based on two dimensional photonic crystal structures and apparatus made thereby
EP1094345A1 (en) * 1999-10-19 2001-04-25 BRITISH TELECOMMUNICATIONS public limited company Method of making a photonic band gap structure
EP1265326B1 (en) * 2000-03-13 2009-05-13 Sharp Kabushiki Kaisha Gain-coupled distributed feedback semiconductor laser device and production method therefor
JP2001281473A (ja) * 2000-03-28 2001-10-10 Toshiba Corp フォトニクス結晶及びその製造方法、光モジュール並びに光システム
US6365428B1 (en) * 2000-06-15 2002-04-02 Sandia Corporation Embedded high-contrast distributed grating structures
US6560006B2 (en) * 2001-04-30 2003-05-06 Agilent Technologies, Inc. Two-dimensional photonic crystal slab waveguide
US6944373B2 (en) * 2002-08-01 2005-09-13 Northrop Grumman Corporation High index-step grating fabrication using a regrowth-over-dielectric process
US6649439B1 (en) * 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process

Similar Documents

Publication Publication Date Title
JP2004133407A5 (cg-RX-API-DMAC7.html)
US7531394B2 (en) Manufacturing method for a TFT LCD array substrate
KR960002749A (ko) 반도체장치의 제조방법
JP2008235866A (ja) 半導体素子及びその製造方法
JP2008521216A5 (cg-RX-API-DMAC7.html)
JP2009518862A5 (cg-RX-API-DMAC7.html)
CN102354669B (zh) 硅纳米线器件的制作方法
CN105470282B (zh) 一种无像素bank的TFT-OLED及制备方法
CN102455593B (zh) 光刻胶图案的形成方法和阵列基板的制造方法
JPH03129818A (ja) 半導体装置の製造方法
CN101944538A (zh) 半导体结构及其制造方法
ATE457525T1 (de) Verfahren zur herstellung selbstausgerichteter schottky-dioden für halbleiterbauelemente
US20080020576A1 (en) Method of forming polysilicon pattern
CN105789049B (zh) 图案化鳍式场效应晶体管（finfet）器件的多个部件的方法
JPS60167439A (ja) 相補型誘電体分離基板の製造方法
CN111708249B (zh) 光掩膜、三维存储器及其制备方法
KR100744088B1 (ko) 벌브 리세스 게이트를 갖는 반도체 소자의 제조방법
JP2005057147A5 (cg-RX-API-DMAC7.html)
KR950004413A (ko) 반도체 소자의 콘택제조방법
KR100505421B1 (ko) 반도체 소자의 패턴 형성 방법
JP2007528123A5 (cg-RX-API-DMAC7.html)
KR100909806B1 (ko) 반도체 소자의 소자분리방법
TW202518532A (zh) 在半導體裝置中形成線狀圖案的方法
KR20020002629A (ko) 반도체소자의 미세패턴 형성방법
JPS6246527A (ja) 半導体装置の製造方法