JP2004095799A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2004095799A
JP2004095799A JP2002254128A JP2002254128A JP2004095799A JP 2004095799 A JP2004095799 A JP 2004095799A JP 2002254128 A JP2002254128 A JP 2002254128A JP 2002254128 A JP2002254128 A JP 2002254128A JP 2004095799 A JP2004095799 A JP 2004095799A
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JP
Japan
Prior art keywords
wiring
chip
wirings
chip mounting
bases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002254128A
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English (en)
Japanese (ja)
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JP2004095799A5 (https=
Inventor
Katsuhiko Oyama
尾山 勝彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002254128A priority Critical patent/JP2004095799A/ja
Priority to US10/649,940 priority patent/US7205670B2/en
Publication of JP2004095799A publication Critical patent/JP2004095799A/ja
Publication of JP2004095799A5 publication Critical patent/JP2004095799A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads
    • H10W72/9445Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/22Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/297Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
JP2002254128A 2002-08-30 2002-08-30 半導体装置およびその製造方法 Pending JP2004095799A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002254128A JP2004095799A (ja) 2002-08-30 2002-08-30 半導体装置およびその製造方法
US10/649,940 US7205670B2 (en) 2002-08-30 2003-08-28 Semiconductor device and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002254128A JP2004095799A (ja) 2002-08-30 2002-08-30 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2004095799A true JP2004095799A (ja) 2004-03-25
JP2004095799A5 JP2004095799A5 (https=) 2004-12-16

Family

ID=32059948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002254128A Pending JP2004095799A (ja) 2002-08-30 2002-08-30 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US7205670B2 (https=)
JP (1) JP2004095799A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7489030B2 (en) 2005-12-08 2009-02-10 Elpida Memory, Inc. Stacked semiconductor device
JP2011029535A (ja) * 2009-07-29 2011-02-10 Elpida Memory Inc 半導体装置
JP2011253607A (ja) * 2010-06-01 2011-12-15 Samsung Electronics Co Ltd 積層半導体メモリ装置、これを含むメモリシステム及び貫通電極の欠陥リペア方法
CN111668180A (zh) * 2019-03-06 2020-09-15 爱思开海力士有限公司 包括混合布线接合结构的层叠封装件

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3925615B2 (ja) * 2001-07-04 2007-06-06 ソニー株式会社 半導体モジュール
KR100435813B1 (ko) * 2001-12-06 2004-06-12 삼성전자주식회사 금속 바를 이용하는 멀티 칩 패키지와 그 제조 방법
JP5592055B2 (ja) 2004-11-03 2014-09-17 テッセラ,インコーポレイテッド 積層パッケージングの改良
US20070069389A1 (en) * 2005-09-15 2007-03-29 Alexander Wollanke Stackable device, device stack and method for fabricating the same
US8058101B2 (en) 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US7663232B2 (en) 2006-03-07 2010-02-16 Micron Technology, Inc. Elongated fasteners for securing together electronic components and substrates, semiconductor device assemblies including such fasteners, and accompanying systems
FR2923081B1 (fr) * 2007-10-26 2009-12-11 3D Plus Procede d'interconnexion verticale de modules electroniques 3d par des vias.
KR20100048610A (ko) * 2008-10-31 2010-05-11 삼성전자주식회사 반도체 패키지 및 그 형성 방법
TWI446498B (zh) * 2009-03-13 2014-07-21 泰斯拉公司 具有延伸穿越銲墊之通孔的堆疊微電子總成
KR20110061404A (ko) * 2009-12-01 2011-06-09 삼성전자주식회사 칩 실리콘 관통 비아와 패키지간 연결부를 포함하는 반도체 패키지들의 적층 구조 및 그 제조 방법
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
US8836136B2 (en) 2011-10-17 2014-09-16 Invensas Corporation Package-on-package assembly with wire bond vias
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9391008B2 (en) * 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
US8860202B2 (en) * 2012-08-29 2014-10-14 Macronix International Co., Ltd. Chip stack structure and manufacturing method thereof
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
US10043779B2 (en) 2015-11-17 2018-08-07 Invensas Corporation Packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529533A (ja) 1991-07-23 1993-02-05 Fujitsu Ltd 半導体装置
JP2806357B2 (ja) * 1996-04-18 1998-09-30 日本電気株式会社 スタックモジュール
JP2865102B2 (ja) 1998-01-19 1999-03-08 株式会社日立製作所 マルチチップモジュール
US6180881B1 (en) * 1998-05-05 2001-01-30 Harlan Ruben Isaak Chip stack and method of making same
US6020629A (en) * 1998-06-05 2000-02-01 Micron Technology, Inc. Stacked semiconductor package and method of fabrication
JP2002009227A (ja) 2000-06-20 2002-01-11 Sony Corp 半導体装置とその製造方法
JP4109839B2 (ja) 2001-06-01 2008-07-02 株式会社東芝 半導体装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7489030B2 (en) 2005-12-08 2009-02-10 Elpida Memory, Inc. Stacked semiconductor device
JP2011029535A (ja) * 2009-07-29 2011-02-10 Elpida Memory Inc 半導体装置
US8908411B2 (en) 2009-07-29 2014-12-09 Ps4 Luxco S.A.R.L. Semiconductor device
JP2011253607A (ja) * 2010-06-01 2011-12-15 Samsung Electronics Co Ltd 積層半導体メモリ装置、これを含むメモリシステム及び貫通電極の欠陥リペア方法
CN111668180A (zh) * 2019-03-06 2020-09-15 爱思开海力士有限公司 包括混合布线接合结构的层叠封装件
CN111668180B (zh) * 2019-03-06 2023-04-18 爱思开海力士有限公司 包括混合布线接合结构的层叠封装件

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US20040115863A1 (en) 2004-06-17
US7205670B2 (en) 2007-04-17

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