JP2003527295A5 - - Google Patents

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Publication number
JP2003527295A5
JP2003527295A5 JP2001567829A JP2001567829A JP2003527295A5 JP 2003527295 A5 JP2003527295 A5 JP 2003527295A5 JP 2001567829 A JP2001567829 A JP 2001567829A JP 2001567829 A JP2001567829 A JP 2001567829A JP 2003527295 A5 JP2003527295 A5 JP 2003527295A5
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JP
Japan
Prior art keywords
reaction vessel
heating element
source material
seed crystal
growth
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JP2001567829A
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English (en)
Japanese (ja)
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JP2003527295A (ja
JP5179690B2 (ja
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Priority claimed from PCT/US2001/007966 external-priority patent/WO2001068954A2/en
Publication of JP2003527295A publication Critical patent/JP2003527295A/ja
Publication of JP2003527295A5 publication Critical patent/JP2003527295A5/ja
Application granted granted Critical
Publication of JP5179690B2 publication Critical patent/JP5179690B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001567829A 2000-03-13 2001-03-13 炭化ケイ素の大型単結晶を作るための軸芯勾配輸送装置及び方法 Expired - Lifetime JP5179690B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18879300P 2000-03-13 2000-03-13
US60/188,793 2000-03-13
PCT/US2001/007966 WO2001068954A2 (en) 2000-03-13 2001-03-13 Axial gradient transport apparatus and process

Publications (3)

Publication Number Publication Date
JP2003527295A JP2003527295A (ja) 2003-09-16
JP2003527295A5 true JP2003527295A5 (enExample) 2008-05-15
JP5179690B2 JP5179690B2 (ja) 2013-04-10

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ID=22694546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001567829A Expired - Lifetime JP5179690B2 (ja) 2000-03-13 2001-03-13 炭化ケイ素の大型単結晶を作るための軸芯勾配輸送装置及び方法

Country Status (7)

Country Link
US (1) US6800136B2 (enExample)
EP (1) EP1268882B1 (enExample)
JP (1) JP5179690B2 (enExample)
AT (1) ATE509147T1 (enExample)
AU (1) AU2001249175A1 (enExample)
TW (1) TW548352B (enExample)
WO (1) WO2001068954A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7918937B2 (en) 2005-08-17 2011-04-05 El-Seed Corp. Method of producing silicon carbide epitaxial layer
JP2007112661A (ja) * 2005-10-20 2007-05-10 Bridgestone Corp 炭化ケイ素単結晶の製造方法及び製造装置
US20070128762A1 (en) * 2005-12-02 2007-06-07 Lucent Technologies Inc. Growing crystaline structures on demand
EP2171134B1 (en) * 2007-06-27 2016-10-19 II-VI Incorporated Fabrication of sic substrates with low warp and bow
DE112009003667B4 (de) 2008-12-08 2024-04-25 Ii-Vi Inc. Verbessertes axial-gradient-transport- (agt-) züchtungsverfahren und -apparat unter anwendung von resistivem erhitzen
RU2393585C1 (ru) * 2009-04-28 2010-06-27 ЗАО "Эпиэл" Способ формирования полупроводниковых структур
DE102010029756B4 (de) 2010-06-07 2023-09-21 Sicrystal Gmbh Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung
EP2852699B1 (en) 2012-04-20 2025-01-29 II-VI Incorporated Method and apparatus for preapring large diameter, high quality sic single crystals
US20170321345A1 (en) * 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
RU173041U1 (ru) * 2017-02-20 2017-08-08 федеральное государственное автономное образовательное учреждение высшего образования "Северо-Кавказский федеральный университет" Устройство для получения совершенных монокристаллов карбида кремния с дополнительными регулирующими контурами индукционного нагрева
CN109234799B (zh) * 2018-11-02 2019-07-09 山东天岳先进材料科技有限公司 一种提高pvt法碳化硅单晶生长质量的方法
KR102236396B1 (ko) * 2020-05-29 2021-04-02 에스케이씨 주식회사 탄화규소 잉곳의 제조방법 및 탄화규소 잉곳 제조용 시스템
CN111254486A (zh) * 2020-05-06 2020-06-09 眉山博雅新材料有限公司 一种晶体制备装置
JP7644779B2 (ja) * 2020-05-06 2025-03-12 眉山博雅新材料股▲ふん▼有限公司 結晶の製造装置及び成長方法
CN119217525B (zh) * 2024-09-30 2025-10-03 苏州精材半导体科技有限公司 闸门开关装置以及闸门控制方法

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
JPH061699A (ja) * 1992-06-19 1994-01-11 Nisshin Steel Co Ltd 炭化ケイ素単結晶製造装置
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
JPH0710697A (ja) * 1993-06-28 1995-01-13 Nisshin Steel Co Ltd 炭化ケイ素単結晶の製造装置
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JP3902225B2 (ja) * 1994-12-01 2007-04-04 エスアイクリスタル アクチエンゲゼルシャフト 昇華育種による炭化シリコン単結晶の製造方法及び装置
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5746827A (en) * 1995-12-27 1998-05-05 Northrop Grumman Corporation Method of producing large diameter silicon carbide crystals
JP3491429B2 (ja) * 1996-02-14 2004-01-26 株式会社デンソー 炭化珪素単結晶の製造方法
JP3553744B2 (ja) * 1996-09-27 2004-08-11 日本碍子株式会社 積層部材の製造方法
JP3237069B2 (ja) * 1996-09-30 2001-12-10 三菱マテリアル株式会社 ＳｉＣ単結晶の製造方法
GB9624715D0 (en) * 1996-11-28 1997-01-15 Philips Electronics Nv Electronic device manufacture
US5667587A (en) * 1996-12-18 1997-09-16 Northrop Gruman Corporation Apparatus for growing silicon carbide crystals
US5873937A (en) * 1997-05-05 1999-02-23 Northrop Grumman Corporation Method of growing 4H silicon carbide crystal
US5788768A (en) * 1997-05-08 1998-08-04 Northrop Grumman Corporation Feedstock arrangement for silicon carbide boule growth
AU1801100A (en) * 1998-12-25 2000-07-31 Showa Denko Kabushiki Kaisha Method for growing single crystal of silicon carbide

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