JP7537079B2 - 結晶成長装置及び坩堝 - Google Patents
結晶成長装置及び坩堝 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims description 76
- 230000005855 radiation Effects 0.000 claims description 84
- 239000002994 raw material Substances 0.000 claims description 77
- 238000010438 heat treatment Methods 0.000 claims description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 18
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- 238000004088 simulation Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 11
- 239000011810 insulating material Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000008022 sublimation Effects 0.000 description 10
- 238000000859 sublimation Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000005092 sublimation method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
図1は、第1実施形態にかかる結晶成長装置の断面模式図である。図1に示す結晶成長装置100は、坩堝10と断熱材20と加熱部30と支持体40とを備える。図1では、理解を容易にするために、原料G、種結晶S、種結晶S上に結晶成長した単結晶Cを同時に図示している。
断熱材20は、2000℃以上の高温で熱伝導率が10W/mK以下である材料により構成されていることが好ましい。2000℃以上の高温で熱伝導率が10W/mK以下の材料としては、黒鉛、炭素を主成分としたフェルト材があげられる。また、断熱材20は5W/mK以下の部材であることが望ましい。
図4は、第2実施形態にかかる結晶成長装置101の断面模式図である。結晶成長装置101は、坩堝15の構成が結晶成長装置100の坩堝10と異なる。その他の構成は同一であり、同一の構成については同一の符号を付し、説明を省く。
図3に示す構成をシミュレーションで再現し、坩堝を加熱時の原料内に生じる温度差を求めた。シミュレーションは、ANSYS Mechanicalを用いた有限要素法による伝熱解析を実施した。
坩堝厚み:10mm
原料部高さ:200mm
坩堝の本体部の輻射率:0.8(黒鉛相当)
坩堝熱伝導率:40W/mK
原料熱伝導率:3W/mK
加熱部の輻射率:0.8
加熱部内半径:180mm(加熱部と坩堝との距離d:30mm)
第1点(加熱中心)の位置:底面から100mm(原料高さの半分)、加熱部の高さ方向の中心位置と同じ高さ
加熱部の中心温度:2450℃
加熱部の端部温度:2250℃
低輻射部の高さ:100mm
低輻射部の位置:低輻射部の高さ方向の中心が第1点の高さ位置と一致
低輻射部の輻射率:0.2(TaC相当)
図2に示す構成をシミュレーションで再現し、坩堝を加熱時の原料内に生じる温度差を求めた。シミュレーションの方法、条件は、低輻射部を設けなかった点以外は、実施例1と同様にした。
実施例2は、坩堝の本体部と低輻射部の輻射率の関係を変化させた点以外は、実施例1と同様とした。
実施例3は、坩堝と加熱部の距離及び低輻射部の高さの関係を変化させた点以外は、実施例1と同様とした。
原料内の温度差と原料ガスの昇華量との関係をシミュレーションで求めた。結晶成長シミュレーションは、STR社のVirtual Reactor PVT-SiCを用いて行った。シミュレーションは、計算負荷を低減するために、中心軸を通る任意の断面の半分(径方向の半分)の構造のみで行った。その結果を以下の表1に示す。
11、16 本体部
12、17 低輻射部
13 結晶設置部
20 断熱材
30 加熱部
40 支持体
100、101 結晶成長装置
S 種結晶
C 単結晶
K 成長空間
G 原料
P1 第1点
P2 第2点
E1 第1端
Ts 等温面
Claims (7)
- 本体部と前記本体部より輻射率の低い低輻射部とを有する坩堝と、
前記坩堝の外側に位置し、前記坩堝を輻射熱によって加熱する加熱部と、を備え、
前記低輻射部は、低輻射部を有さない坩堝である場合に加熱中心となる前記低輻射部を有さない坩堝の第1点の外表面に設けられており、
前記低輻射部の上部及び下部の外表面に前記本体部が露出している、結晶成長装置。 - 前記低輻射部の輻射率は、前記本体部の輻射率の0.6倍以下である、請求項1に記載の結晶成長装置。
- 前記本体部は、黒鉛であり、
前記低輻射部は、Ta、Mo、Nb、Hf、W及びZrからなる群から選択される元素を含む単体、炭化物、窒化物または混合物である、請求項1又は2に記載の結晶成長装置。 - 前記本体部の外表面は凹凸であり、
前記低輻射部の外表面は平坦面である、請求項1~3のいずれか一項に記載の結晶成長装置。 - 前記低輻射部の高さは、前記第1点から前記加熱部に向って下した垂線の距離の2倍以上である、請求項1~4のいずれか一項に記載の結晶成長装置。
- 前記低輻射部の高さは、前記坩堝の内部に収容される原料の高さの40%以上である、請求項1~5のいずれか一項に記載の結晶成長装置。
- 本体部と前記本体部より輻射率の低い低輻射部とを有し、
前記低輻射部は、坩堝の内部に収容される原料の表面位置より下方の前記坩堝の外表面の一部に設けられ、
前記低輻射部の上部及び下部の外表面に前記本体部が露出している、坩堝。
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JP (1) | JP7537079B2 (ja) |
CN (1) | CN111286780A (ja) |
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DE102023200457A1 (de) | 2023-01-20 | 2024-07-25 | Freiberger Compound Materials Gesellschaft mit beschränkter Haftung | Vorrichtung und Verfahren zur Herstellung von AIII-BV-Verbindungshalbleiter-Einkristallen sowie AIII-BV-Verbindungshalbleiter-Einkristall und -Wafer |
Citations (2)
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JP2006009134A (ja) | 2003-07-31 | 2006-01-12 | Semiconductor Energy Lab Co Ltd | 製造装置 |
JP2017521345A (ja) | 2014-07-02 | 2017-08-03 | プランゼー シャンハイ ハイ パフォーマンス マテリアル リミテッド | 結晶を育成するための坩堝 |
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JPH03177563A (ja) * | 1989-12-04 | 1991-08-01 | Matsushita Electric Ind Co Ltd | 蒸発源用坩堝 |
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US7524376B2 (en) * | 2006-05-04 | 2009-04-28 | Fairfield Crystal Technology, Llc | Method and apparatus for aluminum nitride monocrystal boule growth |
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JP2006009134A (ja) | 2003-07-31 | 2006-01-12 | Semiconductor Energy Lab Co Ltd | 製造装置 |
JP2017521345A (ja) | 2014-07-02 | 2017-08-03 | プランゼー シャンハイ ハイ パフォーマンス マテリアル リミテッド | 結晶を育成するための坩堝 |
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