ATE509147T1 - Vorrichtung zum axial-gradient-transport und verfahren zur herstellung von grossformatigen siliziumkarbid-einkristallen - Google Patents

Vorrichtung zum axial-gradient-transport und verfahren zur herstellung von grossformatigen siliziumkarbid-einkristallen

Info

Publication number
ATE509147T1
ATE509147T1 AT01922362T AT01922362T ATE509147T1 AT E509147 T1 ATE509147 T1 AT E509147T1 AT 01922362 T AT01922362 T AT 01922362T AT 01922362 T AT01922362 T AT 01922362T AT E509147 T1 ATE509147 T1 AT E509147T1
Authority
AT
Austria
Prior art keywords
silicon carbide
reaction chamber
single crystals
axial gradient
carbide single
Prior art date
Application number
AT01922362T
Other languages
German (de)
English (en)
Inventor
David Snyder
William Everson
Original Assignee
Ii Vi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ii Vi Inc filed Critical Ii Vi Inc
Application granted granted Critical
Publication of ATE509147T1 publication Critical patent/ATE509147T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT01922362T 2000-03-13 2001-03-13 Vorrichtung zum axial-gradient-transport und verfahren zur herstellung von grossformatigen siliziumkarbid-einkristallen ATE509147T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18879300P 2000-03-13 2000-03-13
PCT/US2001/007966 WO2001068954A2 (en) 2000-03-13 2001-03-13 Axial gradient transport apparatus and process

Publications (1)

Publication Number Publication Date
ATE509147T1 true ATE509147T1 (de) 2011-05-15

Family

ID=22694546

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01922362T ATE509147T1 (de) 2000-03-13 2001-03-13 Vorrichtung zum axial-gradient-transport und verfahren zur herstellung von grossformatigen siliziumkarbid-einkristallen

Country Status (7)

Country Link
US (1) US6800136B2 (enExample)
EP (1) EP1268882B1 (enExample)
JP (1) JP5179690B2 (enExample)
AT (1) ATE509147T1 (enExample)
AU (1) AU2001249175A1 (enExample)
TW (1) TW548352B (enExample)
WO (1) WO2001068954A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7918937B2 (en) 2005-08-17 2011-04-05 El-Seed Corp. Method of producing silicon carbide epitaxial layer
JP2007112661A (ja) * 2005-10-20 2007-05-10 Bridgestone Corp 炭化ケイ素単結晶の製造方法及び製造装置
US20070128762A1 (en) * 2005-12-02 2007-06-07 Lucent Technologies Inc. Growing crystaline structures on demand
EP2171134B1 (en) * 2007-06-27 2016-10-19 II-VI Incorporated Fabrication of sic substrates with low warp and bow
DE112009003667B4 (de) 2008-12-08 2024-04-25 Ii-Vi Inc. Verbessertes axial-gradient-transport- (agt-) züchtungsverfahren und -apparat unter anwendung von resistivem erhitzen
RU2393585C1 (ru) * 2009-04-28 2010-06-27 ЗАО "Эпиэл" Способ формирования полупроводниковых структур
DE102010029756B4 (de) 2010-06-07 2023-09-21 Sicrystal Gmbh Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung
EP2852699B1 (en) 2012-04-20 2025-01-29 II-VI Incorporated Method and apparatus for preapring large diameter, high quality sic single crystals
US20170321345A1 (en) * 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
RU173041U1 (ru) * 2017-02-20 2017-08-08 федеральное государственное автономное образовательное учреждение высшего образования "Северо-Кавказский федеральный университет" Устройство для получения совершенных монокристаллов карбида кремния с дополнительными регулирующими контурами индукционного нагрева
CN109234799B (zh) * 2018-11-02 2019-07-09 山东天岳先进材料科技有限公司 一种提高pvt法碳化硅单晶生长质量的方法
KR102236396B1 (ko) * 2020-05-29 2021-04-02 에스케이씨 주식회사 탄화규소 잉곳의 제조방법 및 탄화규소 잉곳 제조용 시스템
CN111254486A (zh) * 2020-05-06 2020-06-09 眉山博雅新材料有限公司 一种晶体制备装置
JP7644779B2 (ja) * 2020-05-06 2025-03-12 眉山博雅新材料股▲ふん▼有限公司 結晶の製造装置及び成長方法
CN119217525B (zh) * 2024-09-30 2025-10-03 苏州精材半导体科技有限公司 闸门开关装置以及闸门控制方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
JPH061699A (ja) * 1992-06-19 1994-01-11 Nisshin Steel Co Ltd 炭化ケイ素単結晶製造装置
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
JPH0710697A (ja) * 1993-06-28 1995-01-13 Nisshin Steel Co Ltd 炭化ケイ素単結晶の製造装置
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JP3902225B2 (ja) * 1994-12-01 2007-04-04 エスアイクリスタル アクチエンゲゼルシャフト 昇華育種による炭化シリコン単結晶の製造方法及び装置
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5746827A (en) * 1995-12-27 1998-05-05 Northrop Grumman Corporation Method of producing large diameter silicon carbide crystals
JP3491429B2 (ja) * 1996-02-14 2004-01-26 株式会社デンソー 炭化珪素単結晶の製造方法
JP3553744B2 (ja) * 1996-09-27 2004-08-11 日本碍子株式会社 積層部材の製造方法
JP3237069B2 (ja) * 1996-09-30 2001-12-10 三菱マテリアル株式会社 ＳｉＣ単結晶の製造方法
GB9624715D0 (en) * 1996-11-28 1997-01-15 Philips Electronics Nv Electronic device manufacture
US5667587A (en) * 1996-12-18 1997-09-16 Northrop Gruman Corporation Apparatus for growing silicon carbide crystals
US5873937A (en) * 1997-05-05 1999-02-23 Northrop Grumman Corporation Method of growing 4H silicon carbide crystal
US5788768A (en) * 1997-05-08 1998-08-04 Northrop Grumman Corporation Feedstock arrangement for silicon carbide boule growth
AU1801100A (en) * 1998-12-25 2000-07-31 Showa Denko Kabushiki Kaisha Method for growing single crystal of silicon carbide

Also Published As

Publication number Publication date
EP1268882B1 (en) 2011-05-11
AU2001249175A1 (en) 2001-09-24
WO2001068954A2 (en) 2001-09-20
JP2003527295A (ja) 2003-09-16
JP5179690B2 (ja) 2013-04-10
WO2001068954A3 (en) 2002-04-18
EP1268882A4 (en) 2008-01-23
EP1268882A2 (en) 2003-01-02
US6800136B2 (en) 2004-10-05
TW548352B (en) 2003-08-21
US20030037724A1 (en) 2003-02-27

Similar Documents

Publication Publication Date Title
ATE509147T1 (de) Vorrichtung zum axial-gradient-transport und verfahren zur herstellung von grossformatigen siliziumkarbid-einkristallen
EP2264223A3 (en) Micropipe-free silicon carbide and related method of manufacture
EP1354987A4 (en) MONOCRYSTAL OF SILICON CARBIDE AND METHOD AND DEVICE FOR PRODUCING SAME
DE602004024800D1 (de) Züchten von ultrahochreinen siliciumcarbidkristallen in wasserstoffhaltiger umgebung
EP0389533A4 (en) Sublimation growth of silicon carbide single crystals
WO2008039914A3 (en) Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
JP4553489B2 (ja) 炭化珪素のバルク単結晶の生成
JP2012214379A5 (enExample)
TW200615406A (en) Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
DE602004001802D1 (de) Vorrichtung und Verfahren zur Herstellung von Einkristallen durch Dampfphasenabscheidung
JP2008515749A5 (enExample)
EP1491662A4 (en) PROCESS FOR PRODUCING SiC CRYSTAL AND SiC CRYSTAL
SE9503428D0 (sv) A method for epitaxially growing objects and a device for such a growth
US20060102068A1 (en) Reduction of subsurface damage in the production of bulk SiC crystals
RU2006104555A (ru) Твердые алмазы и способы их получения
CN109280966B (zh) 掺杂少量钒的高质量半绝缘碳化硅单晶及衬底的制备方法
DE69705545D1 (de) Vorrichtung zur züchtung von grossen siliziumkarbideinkristallen
TW200704834A (en) Silicon wafer and manufacturing method for same
CN109280965A (zh) 一种掺杂少量钒的高质量半绝缘碳化硅单晶及衬底
DE69712520D1 (de) Züchtung von siliziumkarbid einkristallen
EP1201793A4 (en) METHOD AND DEVICE FOR PREPARING HIGH QUALITY CRYSTALS
JPS56104799A (en) Production of si single crystal and device therefor
WO2005007943A1 (ja) フッ化物結晶の製造方法
Gospodinov The growth of HgI2 crystals
SE9503427D0 (sv) A method for epitaxially growing objects and a device for such a growth

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties