DE69712520D1 - Züchtung von siliziumkarbid einkristallen - Google Patents

Züchtung von siliziumkarbid einkristallen

Info

Publication number
DE69712520D1
DE69712520D1 DE69712520T DE69712520T DE69712520D1 DE 69712520 D1 DE69712520 D1 DE 69712520D1 DE 69712520 T DE69712520 T DE 69712520T DE 69712520 T DE69712520 T DE 69712520T DE 69712520 D1 DE69712520 D1 DE 69712520D1
Authority
DE
Germany
Prior art keywords
silicon carbide
source
growing
seed crystal
growth zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69712520T
Other languages
English (en)
Other versions
DE69712520T2 (de
Inventor
Yury Alexandrovich Vodakov
Evgeny Nikolaevich Mokhov
Mark Grigorievich Ramm
Alexandr Dmitrievich Roenkov
Jury Nikolaevich Makarov
Sergei Jurievich Karpov
Mark Spiridonovich Ramm
Leonid Iosifovich Temkin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority claimed from PCT/RU1997/000005 external-priority patent/WO1997027350A1/en
Application granted granted Critical
Publication of DE69712520D1 publication Critical patent/DE69712520D1/de
Publication of DE69712520T2 publication Critical patent/DE69712520T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Feed For Specific Animals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69712520T 1997-01-22 1997-01-22 Züchtung von siliziumkarbid einkristallen Expired - Lifetime DE69712520T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU1997/000005 WO1997027350A1 (en) 1996-01-22 1997-01-22 Silicon carbide monocrystal growth

Publications (2)

Publication Number Publication Date
DE69712520D1 true DE69712520D1 (de) 2002-06-13
DE69712520T2 DE69712520T2 (de) 2003-01-09

Family

ID=20130072

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69712520T Expired - Lifetime DE69712520T2 (de) 1997-01-22 1997-01-22 Züchtung von siliziumkarbid einkristallen

Country Status (3)

Country Link
US (1) US6261363B1 (de)
AT (1) ATE217368T1 (de)
DE (1) DE69712520T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6547877B2 (en) * 1996-01-22 2003-04-15 The Fox Group, Inc. Tantalum crucible fabrication and treatment
US6562130B2 (en) * 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
US6537371B2 (en) * 1997-01-22 2003-03-25 The Fox Group, Inc. Niobium crucible fabrication and treatment
US6670282B2 (en) * 2000-03-16 2003-12-30 Denso Corporation Method and apparatus for producing silicon carbide crystal
US6562131B2 (en) * 1999-07-20 2003-05-13 The Fox Group, Inc. Method for growing single crystal silicon carbide
US6514338B2 (en) * 1999-12-27 2003-02-04 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal
US6547876B2 (en) * 2001-02-07 2003-04-15 Emcore Corporation Apparatus for growing epitaxial layers on wafers by chemical vapor deposition
US6780243B1 (en) * 2001-11-01 2004-08-24 Dow Corning Enterprises, Inc. Method of silicon carbide monocrystalline boule growth
US7056383B2 (en) * 2004-02-13 2006-06-06 The Fox Group, Inc. Tantalum based crucible
US7563321B2 (en) * 2004-12-08 2009-07-21 Cree, Inc. Process for producing high quality large size silicon carbide crystals
WO2007020092A1 (en) * 2005-08-17 2007-02-22 Optovent Ab A method of producing silicon carbide epitaxial layer
CN102732953B (zh) * 2011-04-12 2017-04-19 李汶军 双籽晶辅助气相传输方法生长碳化硅单晶的技术和装置
JP5910393B2 (ja) 2012-07-26 2016-04-27 住友電気工業株式会社 炭化珪素基板の製造方法
JP7024622B2 (ja) * 2018-06-19 2022-02-24 株式会社デンソー 炭化珪素単結晶およびその製造方法
SE545281C2 (en) * 2021-03-11 2023-06-13 Kiselkarbid I Stockholm Ab Simultaneous growth of two silicon carbide layers
SE544999C2 (en) * 2021-03-11 2023-02-21 Kiselkarbid I Stockholm Ab System and method of producing monocrystalline layers on a substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL87348C (de) 1954-03-19 1900-01-01
US4302508A (en) * 1972-02-28 1981-11-24 Emerson Electric Co. Silicon carbide elements
CA1058673A (en) * 1974-10-10 1979-07-17 Frank J. Hierholzer (Jr.) Silicon carbide shapes resistance heater elements
US4147572A (en) 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
JPS5948792B2 (ja) 1982-08-17 1984-11-28 工業技術院長 炭化けい素結晶成長法
DE3230727A1 (de) 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von siliziumkarbid
US4556436A (en) 1984-08-22 1985-12-03 The United States Of America As Represented By The Secretary Of The Navy Method of preparing single crystalline cubic silicon carbide layers
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5433167A (en) 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
JP3384242B2 (ja) * 1996-03-29 2003-03-10 株式会社豊田中央研究所 炭化珪素単結晶の製造方法

Also Published As

Publication number Publication date
DE69712520T2 (de) 2003-01-09
US6261363B1 (en) 2001-07-17
ATE217368T1 (de) 2002-05-15

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