BR112023017954A2 - Método para crescimento de monocristais de carbeto de silício de alta qualidade - Google Patents
Método para crescimento de monocristais de carbeto de silício de alta qualidadeInfo
- Publication number
- BR112023017954A2 BR112023017954A2 BR112023017954A BR112023017954A BR112023017954A2 BR 112023017954 A2 BR112023017954 A2 BR 112023017954A2 BR 112023017954 A BR112023017954 A BR 112023017954A BR 112023017954 A BR112023017954 A BR 112023017954A BR 112023017954 A2 BR112023017954 A2 BR 112023017954A2
- Authority
- BR
- Brazil
- Prior art keywords
- chamber
- substrate
- silicon carbide
- sic
- high quality
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 title abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000002994 raw material Substances 0.000 abstract 2
- 150000001722 carbon compounds Chemical class 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
método para crescimento de monocristais de carbeto de silício de alta qualidade. a presente invenção refere-se a um método para crescimento de uma camada epitaxial em um substrato (20) de carbeto de silício monocristalino, sic. o método compreende fornecer (s100) uma matéria-prima (10) de sic policristalino monolítico com uma estrutura colunar de microgrãos e o substrato (20) de sic monocristalino, em uma câmara (5) de um cadinho com uma distância entre eles; dispor (s102) um captador de carbono (1) na dita câmara (5) do cadinho próximo à matéria-prima (10) e ao substrato (20), o dito captador de carbono (1) tendo um ponto de fusão superior a 2200° c e uma capacidade de formar uma camada de carbeto com espécies de carbono evaporadas a partir do sic; reduzir (s106) a pressão na câmara (5); inserir (s108) um gás inerte na câmara (5); elevar (s110) a temperatura na câmara (5) para uma temperatura de crescimento, de modo que seja alcançada uma taxa de crescimento entre 1 µm/h e 1 mm/h; e manter (s112) a temperatura de crescimento até que um crescimento de pelo menos 5 µm tenha sido alcançado no substrato (20).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP21162115.6A EP4056739B1 (en) | 2021-03-11 | 2021-03-11 | Method of growing high-quality single crystal silicon carbide |
| PCT/EP2022/054151 WO2022189126A1 (en) | 2021-03-11 | 2022-02-18 | Method of growing high-quality single crystal silicon carbide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR112023017954A2 true BR112023017954A2 (pt) | 2023-11-14 |
Family
ID=74871302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112023017954A BR112023017954A2 (pt) | 2021-03-11 | 2022-02-18 | Método para crescimento de monocristais de carbeto de silício de alta qualidade |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20240150929A1 (pt) |
| EP (1) | EP4056739B1 (pt) |
| JP (1) | JP2024508945A (pt) |
| KR (1) | KR20230169109A (pt) |
| CN (1) | CN117157435A (pt) |
| AU (1) | AU2022233830A1 (pt) |
| BR (1) | BR112023017954A2 (pt) |
| CA (1) | CA3212482A1 (pt) |
| WO (1) | WO2022189126A1 (pt) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024117953A1 (en) * | 2022-11-28 | 2024-06-06 | Kiselkarbid I Stockholm Ab | Production of silicon carbide epitaxial wafers |
| CN117342560B (zh) * | 2023-12-06 | 2024-02-27 | 通威微电子有限公司 | 碳化硅粉料合成方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7918937B2 (en) * | 2005-08-17 | 2011-04-05 | El-Seed Corp. | Method of producing silicon carbide epitaxial layer |
| JP5464544B2 (ja) * | 2009-05-12 | 2014-04-09 | 学校法人関西学院 | エピタキシャル成長層付き単結晶ＳｉＣ基板、炭素供給フィード基板、及び炭素ナノ材料付きＳｉＣ基板 |
| JP6080075B2 (ja) * | 2013-06-13 | 2017-02-15 | 学校法人関西学院 | ＳｉＣ基板の表面処理方法 |
| EP3382067B1 (en) * | 2017-03-29 | 2021-08-18 | SiCrystal GmbH | Silicon carbide substrate and method of growing sic single crystal boules |
| WO2018183585A1 (en) * | 2017-03-29 | 2018-10-04 | Pallidus, Inc. | Sic volumetric shapes and methods of forming boules |
-
2021
- 2021-03-11 EP EP21162115.6A patent/EP4056739B1/en active Active
-
2022
- 2022-02-18 CN CN202280018977.9A patent/CN117157435A/zh active Pending
- 2022-02-18 BR BR112023017954A patent/BR112023017954A2/pt unknown
- 2022-02-18 CA CA3212482A patent/CA3212482A1/en active Pending
- 2022-02-18 WO PCT/EP2022/054151 patent/WO2022189126A1/en active Application Filing
- 2022-02-18 JP JP2023554290A patent/JP2024508945A/ja active Pending
- 2022-02-18 US US18/549,045 patent/US20240150929A1/en active Pending
- 2022-02-18 AU AU2022233830A patent/AU2022233830A1/en active Pending
- 2022-02-18 KR KR1020237033264A patent/KR20230169109A/ko unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230169109A (ko) | 2023-12-15 |
| AU2022233830A1 (en) | 2023-09-21 |
| WO2022189126A1 (en) | 2022-09-15 |
| US20240150929A1 (en) | 2024-05-09 |
| EP4056739A1 (en) | 2022-09-14 |
| CA3212482A1 (en) | 2022-09-15 |
| CN117157435A (zh) | 2023-12-01 |
| EP4056739C0 (en) | 2023-12-27 |
| EP4056739B1 (en) | 2023-12-27 |
| JP2024508945A (ja) | 2024-02-28 |
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