JP2003517725A - ユニポーラ電界効果トランジスタ - Google Patents

ユニポーラ電界効果トランジスタ

Info

Publication number
JP2003517725A
JP2003517725A JP2001516249A JP2001516249A JP2003517725A JP 2003517725 A JP2003517725 A JP 2003517725A JP 2001516249 A JP2001516249 A JP 2001516249A JP 2001516249 A JP2001516249 A JP 2001516249A JP 2003517725 A JP2003517725 A JP 2003517725A
Authority
JP
Japan
Prior art keywords
layer
fet switch
drift layer
mesa region
unipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001516249A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003517725A5 (enExample
Inventor
チャン，スー−ロン
グプタ，ラジェシュ
Original Assignee
イノベイティブ・テクノロジー・ライセンシング・エルエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イノベイティブ・テクノロジー・ライセンシング・エルエルシー filed Critical イノベイティブ・テクノロジー・ライセンシング・エルエルシー
Publication of JP2003517725A publication Critical patent/JP2003517725A/ja
Publication of JP2003517725A5 publication Critical patent/JP2003517725A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001516249A 1999-08-10 2000-08-03 ユニポーラ電界効果トランジスタ Pending JP2003517725A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/371,741 1999-08-10
US09/371,741 US6380569B1 (en) 1999-08-10 1999-08-10 High power unipolar FET switch
PCT/US2000/021216 WO2001011690A1 (en) 1999-08-10 2000-08-03 Unipolar field-effect transistor

Publications (2)

Publication Number Publication Date
JP2003517725A true JP2003517725A (ja) 2003-05-27
JP2003517725A5 JP2003517725A5 (enExample) 2005-12-22

Family

ID=23465229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001516249A Pending JP2003517725A (ja) 1999-08-10 2000-08-03 ユニポーラ電界効果トランジスタ

Country Status (4)

Country Link
US (1) US6380569B1 (enExample)
EP (1) EP1208601A1 (enExample)
JP (1) JP2003517725A (enExample)
WO (1) WO2001011690A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005236267A (ja) * 2004-01-23 2005-09-02 Toshiba Corp 半導体装置
JP2005327762A (ja) * 2004-05-12 2005-11-24 Toyota Motor Corp 絶縁ゲート型半導体装置
JP2008270492A (ja) * 2007-04-19 2008-11-06 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
US7696071B2 (en) 2006-10-24 2010-04-13 Kabushiki Kaisha Toyota Chuo Kenkyusho Group III nitride based semiconductor and production method therefor
JP2012504334A (ja) * 2008-09-30 2012-02-16 ノースロップ グラマン システムズ コーポレーション エッジ終端性能改善のための電場停止層を備えた半導体構造
JP2015126085A (ja) * 2013-12-26 2015-07-06 トヨタ自動車株式会社 絶縁ゲート型半導体装置の製造方法及び絶縁ゲート型半導体装置
US9755042B2 (en) 2014-04-09 2017-09-05 Toyota Jidosha Kabushiki Kaisha Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device
JP2023553358A (ja) * 2020-12-01 2023-12-21 ウルフスピード インコーポレイテッド フィンｆｅｔパワー半導体デバイス

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DE19848596C2 (de) * 1998-10-21 2002-01-24 Roland Sittig Halbleiterschalter mit gleichmäßig verteilten feinen Steuerstrukturen
WO2002001641A1 (en) * 2000-06-27 2002-01-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device
CN1254026C (zh) 2000-11-21 2006-04-26 松下电器产业株式会社 通信系统用仪器
JP2002270840A (ja) * 2001-03-09 2002-09-20 Toshiba Corp パワーｍｏｓｆｅｔ
US6569738B2 (en) * 2001-07-03 2003-05-27 Siliconix, Inc. Process for manufacturing trench gated MOSFET having drain/drift region
US7410851B2 (en) * 2001-07-05 2008-08-12 International Rectifier Corporation Low voltage superjunction MOSFET
US6639276B2 (en) * 2001-07-05 2003-10-28 International Rectifier Corporation Power MOSFET with ultra-deep base and reduced on resistance
US6770911B2 (en) * 2001-09-12 2004-08-03 Cree, Inc. Large area silicon carbide devices
US7736976B2 (en) * 2001-10-04 2010-06-15 Vishay General Semiconductor Llc Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
US6649477B2 (en) * 2001-10-04 2003-11-18 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
DE10153315B4 (de) * 2001-10-29 2004-05-19 Infineon Technologies Ag Halbleiterbauelement
US6686244B2 (en) * 2002-03-21 2004-02-03 General Semiconductor, Inc. Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
US7087472B2 (en) * 2003-07-18 2006-08-08 Semiconductor Components Industries, L.L.C. Method of making a vertical compound semiconductor field effect transistor device
US6906356B1 (en) * 2004-09-27 2005-06-14 Rockwell Scientific Licensing, Llc High voltage switch
WO2006116249A2 (en) * 2005-04-25 2006-11-02 International Rectifier Corporation Device packages having a iii-nitride based power semiconductor device
US7547964B2 (en) * 2005-04-25 2009-06-16 International Rectifier Corporation Device packages having a III-nitride based power semiconductor device
US20060260956A1 (en) * 2005-05-23 2006-11-23 Bausch & Lomb Incorporated Methods for preventing or reducing interaction between packaging materials and polymeric articles contained therein
US7719080B2 (en) * 2005-06-20 2010-05-18 Teledyne Scientific & Imaging, Llc Semiconductor device with a conduction enhancement layer
JP2007142015A (ja) * 2005-11-16 2007-06-07 Hitachi Ltd 半導体装置
WO2007075996A2 (en) * 2005-12-27 2007-07-05 Qspeed Semiconductor Inc. Apparatus and method for a fast recovery rectifier structure
DE102006024504B4 (de) * 2006-05-23 2010-09-02 Infineon Technologies Austria Ag Leistungshalbleiterbauelement mit vertikaler Gatezone und Verfahren zur Herstellung desselben
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
JP4900212B2 (ja) * 2007-11-30 2012-03-21 株式会社デンソー 炭化珪素半導体装置とその製造方法
US20100018843A1 (en) * 2008-07-24 2010-01-28 General Electric Company Low work function electrical component
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
CN102856385A (zh) * 2012-08-29 2013-01-02 成都瑞芯电子有限公司 一种具有沟槽源极场板的Trench MOSFET晶体管及其制备方法
JP2014120685A (ja) * 2012-12-18 2014-06-30 Toshiba Corp 半導体装置
US9082790B2 (en) * 2013-07-18 2015-07-14 Alpha And Omega Semiconductor Incorporated Normally on high voltage switch
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
CN106575666B (zh) 2014-08-19 2021-08-06 维西埃-硅化物公司 超结金属氧化物半导体场效应晶体管
JP2019046991A (ja) * 2017-09-04 2019-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102018106670B4 (de) * 2018-03-21 2025-02-06 Infineon Technologies Ag Siliziumcarbid-Halbleitervorrichtung mit Graben-Gatestruktur und einem Sourcegebiet in einem oberen Bereich eines Mesaabschnitts
DE102018112109B4 (de) * 2018-05-18 2025-04-30 Infineon Technologies Ag Siliziumcarbid halbleiterbauelement
ES2745740B2 (es) 2018-08-31 2020-07-30 Consejo Superior Investigacion Transistor de efecto de campo de union, metodo de obtencion y uso del mismo
EP3671859B1 (en) * 2018-12-20 2025-04-30 IMEC vzw Method of manufacturing a vertical isolated gate field effect transistor integrated in a semiconductor chip
EP4016646A1 (en) * 2020-12-21 2022-06-22 Hitachi Energy Switzerland AG Power semiconductor device and production method

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JPH0215677A (ja) * 1988-04-27 1990-01-19 General Electric Co (Ge) 単一導電型ｕｍｏｓ電界効果半導体デバイス
JPH07183507A (ja) * 1993-12-22 1995-07-21 Nissan Motor Co Ltd 半導体装置
JPH08316470A (ja) * 1995-05-23 1996-11-29 Fuji Electric Co Ltd 電力用半導体素子
JPH0945902A (ja) * 1995-08-01 1997-02-14 Toshiba Corp Ｍｏｓ型半導体装置の製造方法
JPH09181304A (ja) * 1995-12-21 1997-07-11 Toyota Motor Corp 半導体装置及びその製造方法
JPH09246545A (ja) * 1996-03-08 1997-09-19 Fuji Electric Co Ltd 電力用半導体素子

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JPH0215677A (ja) * 1988-04-27 1990-01-19 General Electric Co (Ge) 単一導電型ｕｍｏｓ電界効果半導体デバイス
JPH07183507A (ja) * 1993-12-22 1995-07-21 Nissan Motor Co Ltd 半導体装置
JPH08316470A (ja) * 1995-05-23 1996-11-29 Fuji Electric Co Ltd 電力用半導体素子
JPH0945902A (ja) * 1995-08-01 1997-02-14 Toshiba Corp Ｍｏｓ型半導体装置の製造方法
JPH09181304A (ja) * 1995-12-21 1997-07-11 Toyota Motor Corp 半導体装置及びその製造方法
JPH09246545A (ja) * 1996-03-08 1997-09-19 Fuji Electric Co Ltd 電力用半導体素子

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005236267A (ja) * 2004-01-23 2005-09-02 Toshiba Corp 半導体装置
JP2005327762A (ja) * 2004-05-12 2005-11-24 Toyota Motor Corp 絶縁ゲート型半導体装置
US7696071B2 (en) 2006-10-24 2010-04-13 Kabushiki Kaisha Toyota Chuo Kenkyusho Group III nitride based semiconductor and production method therefor
JP2008270492A (ja) * 2007-04-19 2008-11-06 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP2012504334A (ja) * 2008-09-30 2012-02-16 ノースロップ グラマン システムズ コーポレーション エッジ終端性能改善のための電場停止層を備えた半導体構造
JP2015126085A (ja) * 2013-12-26 2015-07-06 トヨタ自動車株式会社 絶縁ゲート型半導体装置の製造方法及び絶縁ゲート型半導体装置
US9755042B2 (en) 2014-04-09 2017-09-05 Toyota Jidosha Kabushiki Kaisha Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device
JP2023553358A (ja) * 2020-12-01 2023-12-21 ウルフスピード インコーポレイテッド フィンｆｅｔパワー半導体デバイス
US12176423B2 (en) 2020-12-01 2024-12-24 Wolfspeed, Inc. FinFET power semiconductor devices

Also Published As

Publication number Publication date
EP1208601A1 (en) 2002-05-29
US6380569B1 (en) 2002-04-30
WO2001011690A1 (en) 2001-02-15

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