JP2003510828A - 二酸化珪素ｃｍｐ工程で傷および欠陥を減少するかまたは取り除くための組成物および方法 - Google Patents

二酸化珪素ｃｍｐ工程で傷および欠陥を減少するかまたは取り除くための組成物および方法

Info

Publication number
JP2003510828A
JP2003510828A JP2001526874A JP2001526874A JP2003510828A JP 2003510828 A JP2003510828 A JP 2003510828A JP 2001526874 A JP2001526874 A JP 2001526874A JP 2001526874 A JP2001526874 A JP 2001526874A JP 2003510828 A JP2003510828 A JP 2003510828A
Authority
JP
Japan
Prior art keywords
composition
cationic surfactant
alkyl
ammonium
slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001526874A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003510828A5 (https=
Inventor
ノジョ ハルキ
ジェイ シュッツ ロナルド
ラマチャンドラン ラヴィクマール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies North America Corp
Original Assignee
Infineon Technologies North America Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies North America Corp filed Critical Infineon Technologies North America Corp
Publication of JP2003510828A publication Critical patent/JP2003510828A/ja
Publication of JP2003510828A5 publication Critical patent/JP2003510828A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2001526874A 1999-09-30 2000-09-05 二酸化珪素ｃｍｐ工程で傷および欠陥を減少するかまたは取り除くための組成物および方法 Pending JP2003510828A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/409,464 1999-09-30
US09/409,464 US6303506B1 (en) 1999-09-30 1999-09-30 Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process
PCT/US2000/024342 WO2001023486A1 (en) 1999-09-30 2000-09-05 Compositions for and methods of reducing/eliminating scratches and defects in silicon dioxide cmp process

Publications (2)

Publication Number Publication Date
JP2003510828A true JP2003510828A (ja) 2003-03-18
JP2003510828A5 JP2003510828A5 (https=) 2007-10-04

Family

ID=23620607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001526874A Pending JP2003510828A (ja) 1999-09-30 2000-09-05 二酸化珪素ｃｍｐ工程で傷および欠陥を減少するかまたは取り除くための組成物および方法

Country Status (8)

Country Link
US (1) US6303506B1 (https=)
EP (1) EP1218466B1 (https=)
JP (1) JP2003510828A (https=)
KR (1) KR100643975B1 (https=)
CN (1) CN1211448C (https=)
DE (1) DE60003703T2 (https=)
HK (1) HK1046922A1 (https=)
WO (1) WO2001023486A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216873A (ja) * 2010-03-31 2011-10-27 Rohm & Haas Electronic Materials Cmp Holdings Inc 酸化ケイ素除去を増大させるように適合した研磨組成物で基体を化学機械研磨する方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
TW471057B (en) * 2000-06-09 2002-01-01 Macronix Int Co Ltd Method for reducing dishing effect during chemical mechanical polishing
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
KR100396881B1 (ko) * 2000-10-16 2003-09-02 삼성전자주식회사 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6677239B2 (en) * 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
JP4799843B2 (ja) * 2003-10-17 2011-10-26 三星電子株式会社 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法
KR100558194B1 (ko) * 2003-10-17 2006-03-10 삼성전자주식회사 높은 식각 선택비를 갖는 식각 조성물, 이의 제조 방법,이를 이용한 산화막의 선택적 식각 방법 및 반도체 장치의제조 방법
KR100596845B1 (ko) * 2003-10-22 2006-07-04 주식회사 하이닉스반도체 반도체 소자의 콘택 형성 방법
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
JP2014216464A (ja) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
SG11201900141UA (en) * 2016-08-26 2019-03-28 Ferro Corp Slurry composition and method of selective silica polishing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3426077A (en) * 1964-04-21 1969-02-04 Gaf Corp Low foaming biodegradable surfactant compositions
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
US4588474A (en) 1981-02-03 1986-05-13 Chem-Tronics, Incorporated Chemical milling processes and etchants therefor
US5607718A (en) 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5567300A (en) 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US6068788A (en) * 1995-11-15 2000-05-30 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
US5769689A (en) 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH10102040A (ja) * 1996-09-30 1998-04-21 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216873A (ja) * 2010-03-31 2011-10-27 Rohm & Haas Electronic Materials Cmp Holdings Inc 酸化ケイ素除去を増大させるように適合した研磨組成物で基体を化学機械研磨する方法

Also Published As

Publication number Publication date
US6303506B1 (en) 2001-10-16
CN1211448C (zh) 2005-07-20
EP1218466A1 (en) 2002-07-03
EP1218466B1 (en) 2003-07-02
WO2001023486A1 (en) 2001-04-05
DE60003703T2 (de) 2004-04-22
CN1352673A (zh) 2002-06-05
KR100643975B1 (ko) 2006-11-10
KR20020026419A (ko) 2002-04-10
DE60003703D1 (de) 2003-08-07
HK1046922A1 (zh) 2003-01-30

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