DE60003703T2 - Zusammensetzungen und verfahren zur verminderung/beseitigung von kratzern und defekten im siliziumdioxid-cmp-verfahren - Google Patents

Zusammensetzungen und verfahren zur verminderung/beseitigung von kratzern und defekten im siliziumdioxid-cmp-verfahren Download PDF

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Publication number
DE60003703T2
DE60003703T2 DE60003703T DE60003703T DE60003703T2 DE 60003703 T2 DE60003703 T2 DE 60003703T2 DE 60003703 T DE60003703 T DE 60003703T DE 60003703 T DE60003703 T DE 60003703T DE 60003703 T2 DE60003703 T2 DE 60003703T2
Authority
DE
Germany
Prior art keywords
composition
substance
alkyl
ammonium
cationic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60003703T
Other languages
German (de)
English (en)
Other versions
DE60003703D1 (de
Inventor
Haruki Nojo
J. Ronald SCHUTZ
Ravikumar Ramachandran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
International Business Machines Corp
Original Assignee
International Business Machines Corp
Infineon Technologies North America Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp, Infineon Technologies North America Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE60003703D1 publication Critical patent/DE60003703D1/de
Publication of DE60003703T2 publication Critical patent/DE60003703T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE60003703T 1999-09-30 2000-09-05 Zusammensetzungen und verfahren zur verminderung/beseitigung von kratzern und defekten im siliziumdioxid-cmp-verfahren Expired - Fee Related DE60003703T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US409464 1999-09-30
US09/409,464 US6303506B1 (en) 1999-09-30 1999-09-30 Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process
PCT/US2000/024342 WO2001023486A1 (en) 1999-09-30 2000-09-05 Compositions for and methods of reducing/eliminating scratches and defects in silicon dioxide cmp process

Publications (2)

Publication Number Publication Date
DE60003703D1 DE60003703D1 (de) 2003-08-07
DE60003703T2 true DE60003703T2 (de) 2004-04-22

Family

ID=23620607

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60003703T Expired - Fee Related DE60003703T2 (de) 1999-09-30 2000-09-05 Zusammensetzungen und verfahren zur verminderung/beseitigung von kratzern und defekten im siliziumdioxid-cmp-verfahren

Country Status (8)

Country Link
US (1) US6303506B1 (https=)
EP (1) EP1218466B1 (https=)
JP (1) JP2003510828A (https=)
KR (1) KR100643975B1 (https=)
CN (1) CN1211448C (https=)
DE (1) DE60003703T2 (https=)
HK (1) HK1046922A1 (https=)
WO (1) WO2001023486A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
TW471057B (en) * 2000-06-09 2002-01-01 Macronix Int Co Ltd Method for reducing dishing effect during chemical mechanical polishing
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
KR100396881B1 (ko) * 2000-10-16 2003-09-02 삼성전자주식회사 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6677239B2 (en) * 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
JP4799843B2 (ja) * 2003-10-17 2011-10-26 三星電子株式会社 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法
KR100558194B1 (ko) * 2003-10-17 2006-03-10 삼성전자주식회사 높은 식각 선택비를 갖는 식각 조성물, 이의 제조 방법,이를 이용한 산화막의 선택적 식각 방법 및 반도체 장치의제조 방법
KR100596845B1 (ko) * 2003-10-22 2006-07-04 주식회사 하이닉스반도체 반도체 소자의 콘택 형성 방법
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
JP2014216464A (ja) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
SG11201900141UA (en) * 2016-08-26 2019-03-28 Ferro Corp Slurry composition and method of selective silica polishing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3426077A (en) * 1964-04-21 1969-02-04 Gaf Corp Low foaming biodegradable surfactant compositions
US4339340A (en) * 1975-11-26 1982-07-13 Tokyo Shibaura Electric Co., Ltd. Surface-treating agent adapted for intermediate products of a semiconductor device
US4588474A (en) 1981-02-03 1986-05-13 Chem-Tronics, Incorporated Chemical milling processes and etchants therefor
US5607718A (en) 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5567300A (en) 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US6068788A (en) * 1995-11-15 2000-05-30 Daikin Industries, Ltd. Wafer-cleaning solution and process for the production thereof
US5769689A (en) 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
JPH10102040A (ja) * 1996-09-30 1998-04-21 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法

Also Published As

Publication number Publication date
US6303506B1 (en) 2001-10-16
CN1211448C (zh) 2005-07-20
EP1218466A1 (en) 2002-07-03
EP1218466B1 (en) 2003-07-02
WO2001023486A1 (en) 2001-04-05
CN1352673A (zh) 2002-06-05
KR100643975B1 (ko) 2006-11-10
KR20020026419A (ko) 2002-04-10
JP2003510828A (ja) 2003-03-18
DE60003703D1 (de) 2003-08-07
HK1046922A1 (zh) 2003-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: IBM INTERNATIONAL BUSINESS MACHINES CORPORATIO, US

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

8339 Ceased/non-payment of the annual fee