HK1046922A1 - 在二氧化硅化學機械拋光過程中減少/消除劃痕和缺陷的組合物和方法 - Google Patents
在二氧化硅化學機械拋光過程中減少/消除劃痕和缺陷的組合物和方法Info
- Publication number
- HK1046922A1 HK1046922A1 HK02108469.3A HK02108469A HK1046922A1 HK 1046922 A1 HK1046922 A1 HK 1046922A1 HK 02108469 A HK02108469 A HK 02108469A HK 1046922 A1 HK1046922 A1 HK 1046922A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- defects
- compositions
- reducing
- methods
- silicon dioxide
- Prior art date
Links
- 230000007547 defect Effects 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/409,464 US6303506B1 (en) | 1999-09-30 | 1999-09-30 | Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process |
PCT/US2000/024342 WO2001023486A1 (en) | 1999-09-30 | 2000-09-05 | Compositions for and methods of reducing/eliminating scratches and defects in silicon dioxide cmp process |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1046922A1 true HK1046922A1 (zh) | 2003-01-30 |
Family
ID=23620607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK02108469.3A HK1046922A1 (zh) | 1999-09-30 | 2002-11-22 | 在二氧化硅化學機械拋光過程中減少/消除劃痕和缺陷的組合物和方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6303506B1 (zh) |
EP (1) | EP1218466B1 (zh) |
JP (1) | JP2003510828A (zh) |
KR (1) | KR100643975B1 (zh) |
CN (1) | CN1211448C (zh) |
DE (1) | DE60003703T2 (zh) |
HK (1) | HK1046922A1 (zh) |
WO (1) | WO2001023486A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100378180B1 (ko) * | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
TW471057B (en) * | 2000-06-09 | 2002-01-01 | Macronix Int Co Ltd | Method for reducing dishing effect during chemical mechanical polishing |
US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
KR100396881B1 (ko) * | 2000-10-16 | 2003-09-02 | 삼성전자주식회사 | 웨이퍼 연마에 이용되는 슬러리 및 이를 이용한 화학기계적 연마 방법 |
US6800218B2 (en) | 2001-08-23 | 2004-10-05 | Advanced Technology Materials, Inc. | Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same |
US6677239B2 (en) * | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
KR100558194B1 (ko) * | 2003-10-17 | 2006-03-10 | 삼성전자주식회사 | 높은 식각 선택비를 갖는 식각 조성물, 이의 제조 방법,이를 이용한 산화막의 선택적 식각 방법 및 반도체 장치의제조 방법 |
JP4799843B2 (ja) * | 2003-10-17 | 2011-10-26 | 三星電子株式会社 | 高いエッチング選択比を有するエッチング組成物、その製造方法、これを用いた酸化膜の選択的エッチング方法、及び半導体装置の製造方法 |
KR100596845B1 (ko) * | 2003-10-22 | 2006-07-04 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택 형성 방법 |
US8431490B2 (en) * | 2010-03-31 | 2013-04-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
JP2014216464A (ja) * | 2013-04-25 | 2014-11-17 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物および基板研磨方法 |
US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
SG11201900141UA (en) * | 2016-08-26 | 2019-03-28 | Ferro Corp | Slurry composition and method of selective silica polishing |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3426077A (en) * | 1964-04-21 | 1969-02-04 | Gaf Corp | Low foaming biodegradable surfactant compositions |
US4339340A (en) * | 1975-11-26 | 1982-07-13 | Tokyo Shibaura Electric Co., Ltd. | Surface-treating agent adapted for intermediate products of a semiconductor device |
US4588474A (en) | 1981-02-03 | 1986-05-13 | Chem-Tronics, Incorporated | Chemical milling processes and etchants therefor |
US5607718A (en) | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
US5567300A (en) | 1994-09-02 | 1996-10-22 | Ibm Corporation | Electrochemical metal removal technique for planarization of surfaces |
EP0871209A4 (en) * | 1995-11-15 | 2006-02-08 | Daikin Ind Ltd | PLATELET CLEANING SOLUTION AND METHOD FOR PRODUCING THE SAME |
US5769689A (en) | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
JPH10102040A (ja) * | 1996-09-30 | 1998-04-21 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JP3371775B2 (ja) * | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
-
1999
- 1999-09-30 US US09/409,464 patent/US6303506B1/en not_active Expired - Lifetime
-
2000
- 2000-09-05 EP EP00963316A patent/EP1218466B1/en not_active Expired - Lifetime
- 2000-09-05 KR KR1020017012932A patent/KR100643975B1/ko not_active IP Right Cessation
- 2000-09-05 JP JP2001526874A patent/JP2003510828A/ja active Pending
- 2000-09-05 WO PCT/US2000/024342 patent/WO2001023486A1/en active IP Right Grant
- 2000-09-05 DE DE60003703T patent/DE60003703T2/de not_active Expired - Fee Related
- 2000-09-05 CN CNB008081379A patent/CN1211448C/zh not_active Expired - Fee Related
-
2002
- 2002-11-22 HK HK02108469.3A patent/HK1046922A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2001023486A1 (en) | 2001-04-05 |
KR20020026419A (ko) | 2002-04-10 |
CN1352673A (zh) | 2002-06-05 |
DE60003703T2 (de) | 2004-04-22 |
KR100643975B1 (ko) | 2006-11-10 |
EP1218466B1 (en) | 2003-07-02 |
CN1211448C (zh) | 2005-07-20 |
DE60003703D1 (de) | 2003-08-07 |
US6303506B1 (en) | 2001-10-16 |
EP1218466A1 (en) | 2002-07-03 |
JP2003510828A (ja) | 2003-03-18 |
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