JP2003332251A - 高品質ＩｎＧａＡｓＮ半導体の製造方法 - Google Patents

高品質ＩｎＧａＡｓＮ半導体の製造方法

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Publication number
JP2003332251A
JP2003332251A JP2003082488A JP2003082488A JP2003332251A JP 2003332251 A JP2003332251 A JP 2003332251A JP 2003082488 A JP2003082488 A JP 2003082488A JP 2003082488 A JP2003082488 A JP 2003082488A JP 2003332251 A JP2003332251 A JP 2003332251A
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JP
Japan
Prior art keywords
aluminum
layer
semiconductor layers
growth
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003082488A
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English (en)
Japanese (ja)
Other versions
JP2003332251A5 (https=
Inventor
Tetsuya Takeuchi
哲也 竹内
Ying-Lan Chang
イン−ラン・チャン
David P Bour
ディビッド・ピー・ブール
Michael H Leary
マイケル・エイチ・リアリー
Michael R T Tan
マイケル・アール・ティ・タン
Andy Luan
アンディー・ルアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
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Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2003332251A publication Critical patent/JP2003332251A/ja
Publication of JP2003332251A5 publication Critical patent/JP2003332251A5/ja
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
JP2003082488A 2002-03-25 2003-03-25 高品質ＩｎＧａＡｓＮ半導体の製造方法 Withdrawn JP2003332251A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/106,472 US6764926B2 (en) 2002-03-25 2002-03-25 Method for obtaining high quality InGaAsN semiconductor devices
US10/106472 2002-03-25

Publications (2)

Publication Number Publication Date
JP2003332251A true JP2003332251A (ja) 2003-11-21
JP2003332251A5 JP2003332251A5 (https=) 2006-05-18

Family

ID=27804347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003082488A Withdrawn JP2003332251A (ja) 2002-03-25 2003-03-25 高品質ＩｎＧａＡｓＮ半導体の製造方法

Country Status (4)

Country Link
US (1) US6764926B2 (https=)
EP (1) EP1348778B1 (https=)
JP (1) JP2003332251A (https=)
DE (1) DE60209610T2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019091846A (ja) * 2017-11-16 2019-06-13 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
JP2020035964A (ja) * 2018-08-31 2020-03-05 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
WO2023048295A1 (ja) 2021-09-27 2023-03-30 株式会社Ｊｖｃケンウッド 感覚伝達システム、感覚伝達方法及び感覚伝達プログラム

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4038046B2 (ja) * 2001-12-18 2008-01-23 シャープ株式会社 半導体レーザ装置の製造方法
US6756325B2 (en) * 2002-05-07 2004-06-29 Agilent Technologies, Inc. Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
JP2005064364A (ja) 2003-08-19 2005-03-10 Sony Corp 長波長半導体発光素子およびその製造方法
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US20090014061A1 (en) * 2007-07-10 2009-01-15 The Board Of Trustees Of The Leland Stanford Junior University GaInNAsSb solar cells grown by molecular beam epitaxy
JP2009184836A (ja) * 2008-02-01 2009-08-20 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体の結晶成長方法、発光デバイスの製造方法および電子デバイスの製造方法
US20100319764A1 (en) * 2009-06-23 2010-12-23 Solar Junction Corp. Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells
US20110114163A1 (en) * 2009-11-18 2011-05-19 Solar Junction Corporation Multijunction solar cells formed on n-doped substrates
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US8962991B2 (en) 2011-02-25 2015-02-24 Solar Junction Corporation Pseudomorphic window layer for multijunction solar cells
US8766087B2 (en) 2011-05-10 2014-07-01 Solar Junction Corporation Window structure for solar cell
CN103975449A (zh) * 2011-09-02 2014-08-06 安伯韦弗公司 太阳能电池
WO2013074530A2 (en) 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells
WO2013093579A1 (en) * 2011-12-23 2013-06-27 Soitec Methods of forming dilute nitride materials for use in photoactive devices and related structures
WO2013093581A1 (en) * 2011-12-23 2013-06-27 Soitec Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures
US8879275B2 (en) * 2012-02-21 2014-11-04 International Business Machines Corporation Anti-corrosion conformal coating comprising modified porous silica fillers for metal conductors electrically connecting an electronic component
US9153724B2 (en) 2012-04-09 2015-10-06 Solar Junction Corporation Reverse heterojunctions for solar cells
US9240317B2 (en) 2013-03-28 2016-01-19 Umm Al-Qura University High temperature GaN based super semiconductor and fabrication process
SG11201606353TA (en) 2014-02-05 2016-09-29 Solar Junction Corp Monolithic multijunction power converter
WO2015128254A1 (en) * 2014-02-25 2015-09-03 Koninklijke Philips N.V. Light emitting semiconductor devices with getter layer
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
WO2019010037A1 (en) 2017-07-06 2019-01-10 Solar Junction Corporation HYBRID MOCVD / MBE EPITAXIAL GROWTH OF MULTI-JUNCTION SOLAR CELLS ADAPTED TO THE HIGH-PERFORMANCE NETWORK
EP3669402A1 (en) 2017-09-27 2020-06-24 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having a dilute nitride layer
US11211514B2 (en) 2019-03-11 2021-12-28 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
WO2025108931A1 (de) 2023-11-24 2025-05-30 Aixtron Se Verfahren und vorrichtung zum abscheiden einer iii-v-halbleiterschicht in einer mit einer iii-v-schutzschicht beschichteten oberfläche aufweisenden prozesskammer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US50934A (en) * 1865-11-14 Improvement in devices for opening artesian wells
JP3854693B2 (ja) * 1996-09-30 2006-12-06 キヤノン株式会社 半導体レーザの製造方法
US5903586A (en) * 1997-07-30 1999-05-11 Motorola, Inc. Long wavelength vertical cavity surface emitting laser
US5978398A (en) * 1997-07-31 1999-11-02 Motorola, Inc. Long wavelength vertical cavity surface emitting laser
US5944913A (en) 1997-11-26 1999-08-31 Sandia Corporation High-efficiency solar cell and method for fabrication
JP2003520440A (ja) 2000-01-13 2003-07-02 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 半導体レーザー構造
AU2002219895A1 (en) * 2000-11-27 2002-06-03 Kopin Corporation Bipolar transistor with lattice matched base layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019091846A (ja) * 2017-11-16 2019-06-13 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
JP7043802B2 (ja) 2017-11-16 2022-03-30 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
JP2020035964A (ja) * 2018-08-31 2020-03-05 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
JP7095498B2 (ja) 2018-08-31 2022-07-05 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
WO2023048295A1 (ja) 2021-09-27 2023-03-30 株式会社Ｊｖｃケンウッド 感覚伝達システム、感覚伝達方法及び感覚伝達プログラム

Also Published As

Publication number Publication date
US6764926B2 (en) 2004-07-20
DE60209610T2 (de) 2007-01-11
EP1348778B1 (en) 2006-03-08
US20030181024A1 (en) 2003-09-25
EP1348778A1 (en) 2003-10-01
DE60209610D1 (de) 2006-05-04

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